LRC MMBD701, MMBD701LT1 Datasheet
Silicon Hot –Carrier Diodes
LESHAN RADIO COMPANY, LTD.
These devices are designed primarily for high–efficiency UHF
and VHF detector applications. They are readily adaptable to many
other fast switching RF and digital applications. They are supplied
in an inexpensive plastic package for low–cost,high–volume
consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)
3
CATHODE
MAXIMUM RATINGS (T
Rating Symbol Value Unit
Reverse Voltage V
Forward Power Dissipation P
@ T A = 25°C 280 200 mW
Derate above 25°C 2.8 2.0 mW/°C
Operating Junction T
Temperature Range –55 to +125
Storage Temperature Range T
= 125°C unless otherwise noted)
J
MBD701 MMBD701LT1
R
F
J
stg
–55 to +150 °C
70 Volts
1
ANODE
MBD701
MMBD701LT1
70 VOLTS
HIGH-VOLTAGE
SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
°C
DEVICE MARKING
MMBD701LT1 = 5H
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min ty p M ax Unit
Reverse Breakdown Voltage (I R = 10µAdc) V
Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1 C
Reverse Leakage (V R = 35 V) Figure 3 I
Forward Voltage (I F = 1.0 mAdc) Figure 4 V
Forward Voltage (I F = 10 mAdc) Figure 4 V
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
= 25°C unless otherwise noted)
A
(BR)R
T
R
F
F
70 — — Volts
— 0.5 1.0 pF
— 9.0 200 nAdc
— 0.42 0.5 Vdc
— 0.7 1.0 Vdc
G18–1/2
LESHAN RADIO COMPANY, LTD.
MBD701 MMBD701LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
f =1.0MHz
1.6
1.2
0.8
0.4
, TOT AL CAPACIT ANCE (pF)
T
C
0
0 5.0 10 15 20 25 30 35 40 45 50
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Total Capacitance
10
= 100°C
T
1.0
0.1
0.01
, REVERSE LEAKAGE ( µA)
R
I
0.001
01020304050
A
T
T
=75°C
A
=25°C
A
500
400
KRAKAUER METHOD
300
200
100
0
τ , MINORITY CARRIER LIFETIME (ps)
0 102030 40506070 8090100
I F , FORWARD CURRENT (mA)
Figure 2. Minority Carrier Lifetime
100
10
T
= 85°C
A
1.0
, FORWARD CURRENT (mA)
F
0.1
I
0 0.2 0.4 0.8 1.2 1.6 2.0
T
T
= –40°C
A
= 25°C
A
V R , REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
I
F(PEAK)
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
Figure 5. Krakauer Method of Measuring Lifetime
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
DUT
V F , FORWARD VOLTAGE (VOLTS)
Figure 4. Forward Voltage
STORAGE
CONDUCTION
SAMPLING
PADS
OSCILLOSCOPE
(50 Ω INPUT)
G18–2/2
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