SP1003 Series - 30pF 30kV Unidirectional Discrete TVS
Description
Zener diodes fabricated in a proprietary silicon avalanche
technology protect each I/O pin to provide a high level of
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes at ±30kV
(contact discharge, IEC 61000-4-2) without performance
degradation. Additionally, each diode can safely dissipate
7A of 8/20µs surge current (IEC61000-4-5) with very low
clamping voltages.
Features
Pinout
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
7A (8/20µs)
• Low leakage current of
100nA (MAX) at 5V
Pb
• Tiny SOD723/ SOD882
(JEDEC MO-236) package
saves board space
• Fits solder footprint of
industry standard 0402
(1005) devices
• AEC-Q101 qualied
(SOD882 package)
SOD723SOD882
Functional Block Diagram
Additional Information
Datasheet
Resources
(AEC-Q101 qualied)
Samples
Applications
• Mobile phones
• Smart phones
• PDAs
• Portable navigation
devices
Application Example
Low-speed port
Low-speed port
Outside World
(4) SP1003-01
Shield
Shield
Ground
Ground
• Digital cameras
• Portable medical devices
I/O port
I/O port
Controller
Controller
B1
B1
B2
B2
B3
B3
B4
B4
Signal
Signal
Ground
Ground
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Forward Voltage DropV
Reverse Voltage DropV
Reverse Standoff VoltageV
Reverse Leakage CurrentI
Clamp Voltage
Dynamic ResistanceR
ESD Withstand Voltage
Diode Capacitance
Note: 1 Parameter is guaranteed by design and/or device characterization.
Peak Pulse Current (tp=8/20μs)7. 0A
Operating Temperature–40 to 125°C
Storage Temperature–55 to 150°C
=25ºC)
OP
ParameterSymbolTest ConditionsMinTypMaxUnits
F
R
RWM
LEAK
1
1
1
V
C
DYN
V
ESD
C
D
TLP, tp =100ns, 1/O to GND0.25Ω
IEC61000-4-2 (Contact Discharge)±30kV
IEC61000-4-2 (Air Discharge)±30kV
IF = 10mA0.81. 2V
IR=1mA6.07. 88.5V
IR≤1µA5.0V
VR=5V100nA
Ipp=6A tp=8/20µs11. 4V
I
=7A tp=8/20µs12.0V
pp
Reverse Bias=0V30pF
Thermal Information
ParameterRatingUnits
Storage Temperature Range–55 to 150°C
Maximum Junction Temperature150°C
Maximum Lead Temperature
(Soldering 20-40s)
260°C
Capacitance vs. Reverse Bias
40.0
35.0
30.0
25.0
20.0
15.0
Capacitance (pF)
10.0
5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Clamping Voltage vs. I
14.0
12.0
)
10.0
C
8.0
6.0
4.0
Clamp Voltage (V
2.0
0.0
1 2 3 4 5 6 7
PP
Peak Pulse Current-IPP (A)
Specifications are subject to change without notice.