Littelfuse SP1003 User Manual

TVS Diode Arrays (SPA

1

2

1

2

RoHS

GREEN

1

2

®

Diodes)

General Purpose ESD Protection - SP1003 Series

SP1003 Series - 30pF 30kV Unidirectional Discrete TVS

Description

Zener diodes fabricated in a proprietary silicon avalanche
technology protect each I/O pin to provide a high level of
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). These robust
diodes can safely absorb repetitive ESD strikes at ±30kV
(contact discharge, IEC 61000-4-2) without performance
degradation. Additionally, each diode can safely dissipate
7A of 8/20µs surge current (IEC61000-4-5) with very low
clamping voltages.

Features

Pinout

• ESD, IEC61000-4-2,

±30kV contact, ±30kV air

• EFT, IEC61000-4-4, 40A

(5/50ns)

• Lightning, IEC61000-4-5,

7A (8/20µs)

• Low leakage current of

100nA (MAX) at 5V

Pb

• Tiny SOD723/ SOD882

(JEDEC MO-236) package
saves board space

• Fits solder footprint of

industry standard 0402
(1005) devices

• AEC-Q101 qualied

(SOD882 package)

SOD723 SOD882

Functional Block Diagram

Additional Information

Datasheet

Resources

(AEC-Q101 qualied)

Samples

Applications

• Mobile phones

• Smart phones

• PDAs

• Portable navigation

devices

Application Example

Low-speed port

Low-speed port

Outside World

(4) SP1003-01

Shield

Shield
Ground

Ground

• Digital cameras

• Portable medical devices

I/O port

I/O port

Controller

Controller

B1

B1
B2

B2
B3

B3
B4

B4

Signal

Signal
Ground

Ground

Life Support Note:

Not Intended for Use in Life Support or Life Saving Applications

The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/22/13

TVS Diode Arrays (SPA

®

Diodes)

General Purpose ESD Protection - SP1003 Series

Absolute Maximum Ratings

Symbol Parameter Value Units

I

PP

T

OP

T

STOR

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.

Electrical Characteristics (T

Forward Voltage Drop V

Reverse Voltage Drop V

Reverse Standoff Voltage V

Reverse Leakage Current I

Clamp Voltage

Dynamic Resistance R

ESD Withstand Voltage

Diode Capacitance

Note: 1 Parameter is guaranteed by design and/or device characterization.

Peak Pulse Current (tp=8/20μs) 7. 0 A

Operating Temperature –40 to 125 °C

Storage Temperature –55 to 150 °C

=25ºC)

OP

Parameter Symbol Test Conditions Min Typ Max Units

F

R

RWM

LEAK

1

1

1

V

C

DYN

V

ESD

C

D

TLP, tp =100ns, 1/O to GND 0.25 Ω

IEC61000-4-2 (Contact Discharge) ±30 kV

IEC61000-4-2 (Air Discharge) ±30 kV

IF = 10mA 0.8 1. 2 V

IR=1mA 6.0 7. 8 8.5 V

IR≤1µA 5.0 V

VR=5V 100 nA

Ipp=6A tp=8/20µs 11. 4 V

I

=7A tp=8/20µs 12.0 V

pp

Reverse Bias=0V 30 pF

Thermal Information

Parameter Rating Units

Storage Temperature Range –55 to 150 °C

Maximum Junction Temperature 150 °C

Maximum Lead Temperature

(Soldering 20-40s)

260 °C

Capacitance vs. Reverse Bias

40.0

35.0

30.0

25.0

20.0

15.0

Capacitance (pF)

10.0

5.0

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

DC Bias (V)

Clamping Voltage vs. I

14.0

12.0

)

10.0

C

8.0

6.0

4.0

Clamp Voltage (V

2.0

0.0

1 2 3 4 5 6 7

PP

Peak Pulse Current-IPP (A)

Specifications are subject to change without notice.

© 2013 Littelfuse, Inc.

Revised: 11/22/13