
TVS Diode Arrays (SPA
I/O 1
I/O 2
SOT23-6
V
CC
I/O 3
I/O 4
GND
®
Diodes)
Low Capacitance ESD Protection - SP0504S Series
SP0504S Series 0.85pF Diode Array
Pinout
Pb
Description
The SP0504S has ultra low capacitance rail-to-rail diodes
with an additional zener diode fabricated in a proprietary
silicon avalanche technology to protect each I/O pin
providing a high level of protection for electronic equipment
that may experience destructive electrostatic discharges
(ESD). These robust diodes can safely absorb repetitive
ESD strikes at the maximum level (Level 4) specified in the
IEC 61000-4-2 international standard without performance
degradation. Their very low loading capacitance also makes
them ideal for protecting high speed signal pins such as
HDMI, DVI, USB2.0, and IEEE 1394.
Features
• Low capacitance of
0.85 pF (TYP) per I/O
• ESD protection of
±12kV contact discharge,
±15kV air discharge,
(IEC61000-4-2)
• EFT protection,
IEC61000-4-4, 40A
(5/50ns)
• Low leakage current of
0.5μA (MAX) at 5V
• Small packaging options
saves board space
• Lightning Protection,
IEC61000-4-5, 4.5A
(8/20µs)
Functional Block Diagram
I/O4
I/O1
I/O2
V
CC
GND
I/O3
Additional Information
Datasheet
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Resources
Samples
Applications
• Computer Peripherals
• Mobile Phones
• PDA’s
• Network Hardware/Ports
• Test Equipment
• Medical Equipment
• Digital Cameras
Application Example
Ethernet PHY
J1
J8
GND
SP0504S
Tx+
Tx-
Rx+
Rx-
NC
A single 4 channel SP0504S device can be used to protect
four of the data lines in a HDMI/DVI interface. Two (2)
SP0504S devices provide protection for the main data lines.
Low voltage ASIC HDMI/DVI drivers can also be protected
with the SP0504S, the +V
pins on the SP0504S can be
CC
substituted with a suitable bypass capacitor or in some
backdrive applications the +V
of the SP0504S can be
CC
oated or NC.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/25/13

TVS Diode Arrays (SPA
®
Diodes)
Low Capacitance ESD Protection - SP0504S Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
T
OP
T
STOR
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Electrical Characteristics (T
Reverse Standoff Voltage V
Reverse Leakage Current I
Clamp Voltage
ESD Withstand Voltage
Diode Capacitance
Diode Capacitance
Note: 1. Parameter is guaranteed by design and/or device characterization.
Peak Current (tp=8/20μs) 4.5 A
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
=25ºC)
OP
Parameter Symbol Test Conditions Min Typ Max Units
RWM
LEAK
1
1
1
1
V
C
I/O-GND
C
V
C
ESD
I/O-I/O
IR ≤ 1µA 6.0 V
VR=5V 0.5 µA
IPP=1A, tp=8/20µs, Fwd 9.5 11. 0 V
I
=2A, tp=8/20µs, Fwd 10.6 13.0 V
PP
IEC61000-4-2 (Contact) ±12 kV
IEC61000-4-2 (Air) ±15 kV
Reverse Bias=0V 0.95 1. 1 1.25 pF
Reverse Bias=1.65V 0.7 0.85 1. 0 pF
Reverse Bias=0V 0.5 pF
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
150
260 °C
°C
0
-5
-10
-15
-20
1.E+06 1.E+07 1.E+08 1.E+09 1.E+10
Fr
Capacitance vs. Bias VoltageInsertion Loss (S21) I/O to GND
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
I/O Capacitance (pF)
0.70
0.60
0.50
0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CC
= Float
VCC = 3.3V
VCC = 5V
I/O DC Bias (V)
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 11/25/13