Littelfuse SM User Manual
TVS Diode Arrays (SPA
RoHS
GREEN
®
Diodes)
General Purpose ESD Protection - SM05 through SM36
SM Series 400W TVS Diode Array
Pinout and Functional Block Diagram
(AEC-Q101 qualied)
1
Pb
Description
The SM series TVS Diode Array is designed to protect
sensitive equipment from damage due to electrostatic
discharge (ESD), electrical fast transients (EFT), and
lightning induced surges.
The SM series can absorb repetitive ESD strikes above the
maximum level specified in the IEC61000-4-2 international
standard without performance degradation and safely
dissipate up to 24A of 8/20us induced surge current (IEC61000-4-5) with very low clamping voltages.
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 50A
(5/50ns)
• Lightning, IEC61000-4-5,
24A (t
=8/20μs, SM05)
P
• Working voltages: 5V,
12V, 15V, 24V and 36V
• Low clamping voltage
• Low leakage current
• AEC-Q101 qualied
(SOT23-3 package)
SM Series
3
2
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Applications
• Industrial Equipment
• Test and Medical
Equipment
• Point-of-Sale Terminals
• Motor Controls
RS-232 Application Example
RS-232 Port
RD
TD
RTS
CTS
DSR
DTR
• Legacy Ports
(RS-232, RS-485)
• Security and Alarm
Systems
Transceiver
IC
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/05/13
Case GND
SM15 (x6)
(bidireconal implementaon)
5
TVS Diode Arrays (SPA
®
Diodes)
General Purpose ESD Protection - SM05 through SM36
Absolute Maximum Ratings
Symbol Parameter Value Units
P
Pk
T
OP
T
STOR
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Peak Pulse Power (tp=8/20μs)
Operating Temperature -40 to 125 °C
Storage Temperature -55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
400
W
SM05 Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
Reverse Voltage Drop V
Leakage Current I
Clamp Voltage
Dynamic Resistance
Peak Pulse Current
(8/20µs)
1
2
1
ESD Withstand Voltage
Diode Capacitance
1
RWM
R
LEAK
V
C
R
DYN
Ipp tp=8/20µs 24.0 A
1
V
ESD
C
I/O-GND
C
I/O-I/O
SM12 Electrical Characteristics (T
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 9.8 V
I
=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 13.0 V
PP
TLP, tp=100ns, I/O to GND 0.19 Ω
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Reverse Bias=0V, f=1MHz 400 pF
Reverse Bias=0V, f=1MHz 350 pF
=25ºC)
OP
IR≤1μA 5.0 V
IR=1mA 6.0 V
VR=5V 1. 0 μA
Parameter Symbol Test Conditions Min Ty p Max Units
Reverse Standoff Voltage V
Reverse Voltage Drop V
Leakage Current I
Clamp Voltage
Dynamic Resistance
Peak Pulse Current
(8/20µs)
ESD Withstand Voltage
Diode Capacitance
1
2
1
1
1
6
RWM
R
LEAK
V
R
IPP=1A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 18.5 V
C
I
=10A, tp=8/20µs, Pin 1 or Pin 2 to Pin 3 22.5 V
PP
DYN
TLP, tp=100ns, I/O to GND 0.25 Ω
Ipp tp=8/20µs 1 7. 0 A
V
C
C
ESD
I/O-GND
I/O-I/O
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Reverse Bias=0V, f=1MHz 150 pF
Reverse Bias=0V, f=1MHz 120 pF
IR≤1μA 12.0 V
IR=1mA 13.3 V
VR=12V 1. 0 μA
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 12/05/13
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