Littelfuse SLVU2.8-4 User Manual
TVS Diode Arrays (SPA
5678
4321
Pin 1.3
Pin 2.4
Pin 6.8
Pin 5.7
RoHS
GREEN
®
Diodes)
Lightning Surge Protection - SLVU2.8-4 Series
SLVu2.8-4 Series 2.8V 40A TVS Array
Pinout
Pb
Description
The SLVU2.8-4 was designed to protect low voltage,
CMOS devices from ESD and lightning induced transients.
There is a compensating diode in series with each low
voltage TVS to present a low loading capacitance to the
line being protected. These robust structures can safely
absorb repetitive ESD strikes at ±30kV (contact discharge)
per IEC61000-4-2 standard and each structure can safely
dissipate up to 40A (IEC61000-4-5, t
low clamping voltages.
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 40A
(5/50ns)
• Lightning, IEC61000-4-5,
40A (8/20μs)
• Low capacitance of 2pF
per line
=8/20μs) with very
P
• Low leakage current of
1μA (MAX) at 2.8V
• SOIC-8 (JEDEC MO-012)
pin configuration allows
for simple flow-through
layout
Functional Block Diagram
Additional Information
Datasheet
Resources
Samples
Applications
• 10/100/1000 Ethernet
• WAN/LAN Equipment
• Switching Systems
• Desktops, Servers, and
Notebooks
Application Example
RJ-45
Connector
J1
J8
Case GND
• Analog Inputs
• Base Stations
SLVU2.8-4
Device is shown
as transparent
for actual footprint
Ethernet
PHY
Tx+
TxRx+
Rx-
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
Electrical Characteristics (TOP = 25°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5
DC Bias (V)
Capacitance (pF)
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of I
PP
0
2
4
6
8
10
12
14
0510 15 20 25
Peak Pulse Current-IPP (A)
Clamping Voltage-V
C
(V)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
Reverse Breakdown Voltage V
Snap Back Voltage V
Reverse Leakage Current I
Clamping Voltage
Clamping Voltage
ESD Withstand Voltage
1
1
1
Dynamic Resistance R
Diode Capacitance
1
Note:
Parameter is guaranteed by design and/or device characterization.
1
V
RWM
BR
SB
LEAK
V
V
ESD
DYN
C
C
C
D
TVS Diode Arrays (SPA
®
Diodes)
Lightning Surge Protection - SLVU2.8-4 Series
IR≤1μA 2.8 V
IT=2μA 3.0 V
IT=50mA 2.8 V
VR=2.8V (Each Line) 1 μA
IPP=5A, tP=8/20μs (Each Line) 7. 0 8.5 V
IPP=24A, tP=8/20μs (Each Line) 13.9 15.0 V
IEC61000-4-2 (Contact) ±30 kV
IEC61000-4-2 (Air) ±30 kV
(VC2 - VC1) / (I
VR=0V, f=1MHz (Each Line)
- I
) (Each Line) 0.4 Ω
PP2
PP1
2.0 2.5 pF
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Power (tP=8/20µs) 600 W
Peak Pulse Current (tP=8/20µs) 40 A
Operating Temperature –40 to 125 ºC
Storage Temperature –55 to 150 ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Figure 2: Clamping Voltage vs. I
PP
Figure 1:
Capacitance vs. Reverse Voltage
Figure 3: Pulse Waveform
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13
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