
TVS Diode Arrays (SPA
®
Diodes)
General Purpose ESD Protection - SD05C Series
SD05C Series 450W Discrete bidirectional TVS Diode
Description
The bidirectional SD05C TVS diode is designed to replace
multilayer varistors (MLVs) in electronic equipment for low
speed and DC applications. It will protect any sensitive
equipment from damage due to electrostatic discharge
(ESD) and other transient events.
The SD05C can safely absorb repetitive ESD strikes
at ±30kV (contact discharge, IEC 61000-4-2) without
performance degradation and safely dissipate 30A of
8/20μs induced surge current (IEC61000-4-5) with very low
clamping voltages.
Pinout and Functional Block Diagram
Features
• ESD, IEC61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC61000-4-4, 50A
(5/50ns)
• Lightning, IEC61000-4-5,
30A (t
=8/20μs)
P
Pb
• Low clamping voltage
• Low leakage current
• Small SOD323 package
fits 0805 footprints
Applications
• Switches / Buttons
• Test Equipment /
Instrumentation
• Point-of-Sale Terminals
Additional Information
Datasheet
• Medical Equipment
• Notebooks / Desktops /
Servers
• Computer Peripherals
Resources
Samples
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13

TVS Diode Arrays (SPA
®
Diodes)
General Purpose ESD Protection - SD05C Series
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
P
pk
T
OP
T
STOR
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering 20-40s) 260 °C
Peak Current (tp=8/20μs) 30 A
Peak Pulse Power (tp=8/20μs)
450
W
Operating Temperature –40 to 125 °C
Storage Temperature –55 to 150 °C
Parameter Rating Units
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Voltage Drop V
Reverse Standoff Voltage V
Leakage Current I
Clamp Voltage
1
Dynamic Resistance R
ESD Withstand Voltage
Diode Capacitance
Note:
1
Parameter is guaranteed by design and/or device characterization.
1
1
V
RWM
LEAK
V
DYN
ESD
C
R
C
D
Capacitance vs. Reverse Bias
250.0
200.0
150.0
IR=1mA 6 V
IR≤1μA 5.0 V
VR=5V 1. 0 μA
IPP=1A, tp=8/20µs, Fwd 9.7 V
I
=2A, tp=8/20µs, Fwd 10.3 V
PP
I
=10A, tP=8/20μs, Fwd 13.5 V
PP
I
=24A, tP=8/20μs, Fwd 18.0 V
PP
(VC2 - VC1) / (I
- I
) 0.6 Ω
PP2
PP1
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Reverse Bias=0V, f=1MHz 200 pF
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
(kW)
pk
1
100.0
Capacitance (pF)
50.0
0.0
0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Bias Voltage (V)
0.1
Peak Pulse Power - P
0.01
0.11 10 100 1000
Pulse Duration - tp (µs)
Specifications are subject to change without notice.
© 2013 Littelfuse, Inc.
Revised: 04/24/13