LITEON MBR1635, MBR1630, MBR1650, MBR1645, MBR1660 Datasheet

LITE-ON

SEMICONDUCTOR

MBR1630 thru 1660

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

PIN 1
PIN 2

B

PIN

H

L

D

E

F

J

M

A

G

N

CASE

- 30 to 60

- 16

DIM.

A
B
C
D
E
F

G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AC

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward
Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)
Maximum Forward

Voltage (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)

Operating Temperature Range
Storage Temperature Range

I
I

F

=16A @

F

=16A @

@T

125 C

C

=

TJ =25 C

TJ =125 C

@TJ =25 C

@TJ =125 C

NOTES : 1. 300us Pulse width , 2% duty cycle.

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

F

V

R

I

R

0JC

J

C

J

T

STG

T

MBR1630

30
21
30

MBR1635

35

24.5
35

MBR1640

10000

0.63

0.57

0.2
40

1.5

40
28
40

16

150

450

-55 to +150

-55 to +175

MBR1645

45

31.5
45

MBR1650

50
35
50

MBR1660

1000

0.75

0.65
1

60
42
60

UNIT

V
V
V

A

A

V/us

V
V

mA

50

3

C/W

pF

C
C

REV . 3, 13-S e p-2001 , K THA10

RATING AND CHARACTERISTIC CURVES
MBR 1630 thru M B R1660

FIG.1 - FORWARD CURRENT DERATING CURVE

20

16

12

8

RESISTIVE OR

4

INDUCTIVE LO AD

AVERAGE FORWARD CURRENT

AMPERES

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTE RISTICS

1000

100

TJ= 100 C

10

REVERSE CURRENT ,(mA)

1.0

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

100

50

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACT ERISTICS

100

100

10

10

MBR1630 ~ MBR1645

MBR1650 ~ MBR1660

1.0

1.0

0.1

INSTANTANEOUS

0.01
0

TJ= 25 C

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)

10000

1000

CAPACITANCE , (pF)

100

TJ= 25 C F= 1MHz

0.1

INSTA NTANEOUS FORWARD CURRENT ,(A)

120

0.1

0.2 0.3

0.1

0.1

140

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERS E VOLTAGE , VO LTS

10

4

0.4 0.5 0.6

100

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

REV. 3, 13 -S ep -20 0 1, KT HA10