LITEON MBR1530CT, MBR1560CT, MBR1535CT, MBR1550CT, MBR1545CT Datasheet

LITE-ON
SEMICONDUCTOR

MBR1530CT thru 1560CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AB

C

K

I

PIN 1
PIN 3

132

H

B

PIN

H

L

M

D

A

E

F

G

J

N

PIN 2

CASE

- 30 to 60

- 15

DIM.

A
B
C
D
E
F
G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AB

MIN.

14.22 15.88

2.54 3.43

8.26

-

12.70

2.29

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67 9.65

6.86 5.84

9.28

6.35

14.73

2.79

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent

C

=125 C (See Fig.1)

at T

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)
Maximum Forward

Voltage, (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance,
per element (Note 2)

Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range

@IF=7.5A

=15A

@I

F

=15A

@I

F

@T

@T

T

J

T

J

T

J

=125 C

=25 C

=125 C

J

=25 C

J

=125 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

F

V

R

I

J

C

R

0JC

J

T

STG

T

MBR
1530CT

30
21
30

MBR
1535CT

35

24.5
35

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

MBR
1540CT

40
28
40

0.57

0.84

0.72

0.1
15

MBR
1545CT

45

31.5
45

15

150

10000

400

3.0

-55 to +150

-55 to +175

MBR
1550CT

50
35
50

MBR
1560CT

60
42
60

UNIT

V
V
V

A

A

V/usV/usV/usV/us

0.65

0.90

V

0.80

1.0
50

mA

pF

C/W

C
C

REV . 3, 13-Sep-2 001, K THC02

RATING AND CHARACTERISTIC CURVES
MBR 1530CT thru MBR1560CT

FIG.1 - FORWARD CURRENT DERATING CURVE

15

10

5

RESISTIVE OR

0

0

25

INDUCTIVE LOAD

50

75 100 125 150

AVERAGE F O RWARD CURRENT

AMPERES

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1.0

REVERSE CURRENT ,(mA)

0.1

TJ= 125 C

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

MBR1530CT ~ MBR1 5 45CT

MBR1550CT ~ MBR1560CT

1.0

1.0

10

10

0.01

TJ= 25 C

INSTANTANEOUS

0.001
0

20 40

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE ( %)

10000

1000

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

100

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

0.1

140

120

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERSE VOLTAGE , VOLTS

10

4

0.4 0.5 0.6

100

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

REV. 3, 13 -S ep -20 0 1, KT HC02