LITEON MBR1090CT, MBR10100CT, MBR1070CT, MBR1080CT Datasheet

LITE-ON
SEMICONDUCTOR

MBR1070CT thru 10100CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AB

C

K

I

PIN 1
PIN 3

132

H

B

PIN

H

L

M

D

A

E

F

G

J

N

PIN 2

CASE

- 70 to 100

- 10

Amperes

TO-220AB

DIM.

A
B
C
D
E
F
G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

MIN.

14.22 15.88

2.54 3.43

8.26

-

12.70

2.29

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67 9.65

6.86 5.84

9.28

6.35

14.73

2.79

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent

C

=100 C (See Fig.1)

at T

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)

Maximum Forward
Voltage, (Note 1)

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Typical Junction Capacitance,
per element (Note 2)

Typical Thermal Resistance (Note 3)
Operating Temperature Range

Storage Temperature Range

@IF=5A

=5A

@I

F

=10A

@I

F

=10A

@I

F

@T
@T

T

J

T

J

T

J

T

J

J
J

=25 C
=125 C
=25 C
=125 C

=25 C
=125 C

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Thermal Resistance Junction to Case.

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

F

V

R

I

J

C

R

0JC

J

T

STG

T

MBR1070CT

70
49

70

MBR1080CT

80
56

80

MBR1090CT

10

120

10000

0.85

0.75

0.95

0.85

0.1
15

300

3.0

-55 to +150

-55 to +175

MBR10100CT

90
63

90

REV . 2, 13-Sep-2 001, K THC13

100

70

100

UNIT

V
V
V

A

A

V/us

V

mA

pF

C/W

C
C

RATING AND CHARACTERISTIC CURVES
MBR 1070CT thru MBR10100C T

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

2

AVERAGE FORWARD CURRENT

AMPERES

RESISTIVE OR INDUCTIVE LOAD

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

1.0

TJ= 100 C

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

120

100

80

60

40

20

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

10

10

REVERSE CURRENT ,(mA)

0.1

0.01

TJ= 25 C

INSTANTANEOUS

0.001
20 40

0

60 80 100

PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)

1000

100

CAPACITANCE , (pF)

1.0

1.0

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

0.1

120

140

0.1

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

0.4 0.5 0.6

TJ= 25 C
PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

TJ= 25 C, f= 1MHz

10

0.1

1

10

4

REVERS E VOLTAGE , VO LTS

100

REV. 2, 13 -S ep -20 0 1, KT HC13