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LITE-ON
SEMICONDUCTOR
MBR1070 thru 10100
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AC molded plastic
Polar ity : As marked on the body
Weight : 0. 08 ounces, 2.24 grams
Mounting position : Any
REVERSE VOLTAGE
FORWARD CURRENT
TO-220AC
C
K
12
I
PIN 1
PIN 2
B
PIN
H
L
D
E
F
J
M
A
G
N
CASE
R
- 70 to 100
- 10
Amperes
TO-220AC
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Y
M
N
All Dimensions in millimeter
Volts
MIN.
14.22 15.88
9.65
2.54
5.84
8.26
-
12.70
4.83
0.51
3.53 4.09
3.56 4.83
1.14 1.40
2.03
MAX.
10.67
3.43
6.86
9.28
6.35
14.73
5.33
1.14
0.64 0.30
2.92
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
N
I
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)
Maximum Forward
Voltage (Note 1)
Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.300us Pulse Width, 2% Duty Cycle.
2.Thermal Resistance Junction to Case.
3.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
I
I
I
@T
F
=10A @
F
=10A @
R
F
=20A @
P
@TJ =125 C
135 C
C
=
TJ =25 C
TJ =125 C
TJ =125 C
@TJ =25 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
EL
dv/dt
V
R
I
0JC
R
C
T
STG
T
MBR1070
70
M
49
I
70
F
J
J
MBR1080
80
56
80
A
10
150
10000
0.85
0.75
0.80
0.1
100
2.0
1100
-55 to +150
-55 to +175
MBR1090
90
63
90
REV. 2-PRE, 13-Sep-2001, KTHA12
MBR10100
100
70
100
UNIT
V
V
V
A
A
V/us
V
mA
C/W
pF
C
C
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RATING AND CHARACTERISTIC CURVES
MBR 1070 thr u M B R 10 10 0
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
AVERAGE FORWARD CURRENT
100
1.0
AMPERES
10
RESISTIVE OR INDUCTIVE LOAD
0
0
20
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
60 10080 120
40
CASE TEMPERATURE , C
TJ= 125 C
140
160
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
NUMBER OF CYCLES AT 60H z
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
20
Y
REVERSE CURRENT ,(mA)
0.1
0.01
INSTANTANEOUS
0.001
TJ= 25 C
20 40
0
PERCENT OF RA TED PEAK REVERSE VOLTAGE (%)
TJ= 75 C
60 80 100
10000
1000
REL
CAPACITANCE , (pF)
P
1.0
1.0
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
0.1
140
120
FIG.5 - TYPICAL JUNCTION CAPACITANCE
M
N
0.2 0.3
0.1
I
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
I
AR
TJ= 25 C
PULSE WIDTH 300us
2% Duty cycle
0.8
0.4 0.5 0.6
0.7
0.9
1.0
TJ= 25 C, f= 1MHz
100
0.1
1
REVERS E VOLTAGE , VO LTS
10
4
100
REV. 2-PRE, 13-Sep-2001, KTHA12