LITEON MBR1045CT, MBR1030CT, MBR1040CT, MBR1035CT, MBR1060CT Datasheet

LITE-ON
SEMICONDUCTOR

MBR1030CT thru 1060CT

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AB

C

K

I

PIN 1
PIN 3

132

H

B

PIN

H

L

M

D

A

E

F

G

J

N

R

PIN 2

CASE

A

- 30 to 60

- 10

DIM.

A
B
C
D
E
F
G
H

I

Y

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AB

MIN.

14.22 15.88

2.54 3.43

8.26

-

12.70

2.29

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67 9.65

6.86 5.84

9.28

6.35

14.73

2.79

1.14

0.64 0.30

2.92

I

MBR
1035CT

35

24.5
35

N

MBR
1040CT

40
28
40

0.57

0.70

0.84

170

MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

M

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

V

R

I

C

R

0JC

T

STG

T

F

J

J

MBR

I

1030CT
30
21
30

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward RectifiedCurrent

C

=105 C (See Fig.1)

at T

Peak Forward Surge Current

8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)

Voltage Rate of Change (Rated VR)
Maximum Forward

Voltage, (Note 1)

Maximum DC Reverse Current
at Rated DC Blocking Voltage

Typical Junction Capacitance,
per element (Note 2)

Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range

NOTES : 1. 300us Pulse Width, 2% Duty Cycle.

2. Thermal Resistance Junction to Case.

3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

R

@IF=5A

=5A

@I

P

F

=10A

@I

F

@T
@T

T

J

T

J

T

J

J
J

=125 C
=25 C
=125 C

SYMBOL

L

E

=25 C
=125 C

MBR
1045CT

45

31.5
45

10

125

10000

0.1
15

3.0

-55 to +150

-55 to +175

MBR
1050CT

50
35
50

REV. 2-PRE, 13-Sep-2001, KTHC12

MBR
1060CT

60
42
60

0.65

0.80

0.90

220

UNIT

V
V
V

A

A

V/us

V

mA

pF

C/W

C
C

RATING AND CHARACTERISTIC CURVES
MBR 1030CT thru MBR1060CT

FIG.1 - FORWARD CURRENT DERATING CURVE

16

12

8

4

RESISTIVE OR
INDUCTIVE LOAD

AVERAGE FORWARD CURRENT

AMPERES

0

0

25

100

10

1.0

REVERSE CURRENT ,(mA)

0.1

50

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

75 100 125 150

CASE TEMPERATURE , C

TJ= 125 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURGE CURRENT,

AMPERES

1 5 10 50 1002

NUMBE R OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

100

100

20

Y

R

MBR1030CT ~ MBR1045CT

10

10

A

MBR1050CT ~ MBR10 6 0CT

N

1.0

1.0

I

0.01

INSTANTANEOUS

0.001
0

TJ= 25 C

20 40

PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)

60 80 100

1000

R

P

100

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

10

0.1

INSTANTANEOUS FORWARD CURRENT ,(A)

INSTANTANEOUS FORWARD CURRENT ,(A)

M

I

140

120

FIG.5 - TYPICAL JUNCTION CAPACITANCE

EL

MBR1050CT ~ MBR1060CT

1

REVERS E VOLTAGE , VO LTS

0.1

0.1

0.2 0.3

0.1

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

INSTANTANEOUS FORWARD VOLTAGE , VOLTS

MBR1030CT ~ MBR1045CT

10

4

0.4 0.5 0.6

100

TJ= 25 C
PULSE WIDTH 300us
2% Duty cycle

0.8

0.7

0.9

1.0

REV. 2-PRE, 13-Sep-2001, KTHC12