LITEON MBR1045, MBR1060, MBR1035, MBR1040, MBR1030 Datasheet

LITE-ON

SEMICONDUCTOR

MBR1030 thru 1060

SCHOTTKY BARRIER RECTIFIERS

FEATURES

Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inv erters,free

whelling,and polarity protection applications

MECHANICAL DATA

Case : TO-220AC molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any

REVERSE VOLTAGE
FORWARD CURRENT

TO-220AC

C

K

12

I

PIN 1
PIN 2

B

PIN

H

L

D

E

F

J

M

A

G

N

CASE

- 30 to 60

- 10

DIM.

A
B
C
D
E
F
G
H

I

J
K
L
M
N

All Dimensions in millimeter

Volts

Amperes

TO-220AC

MIN.

14.22 15.88

9.65

2.54

5.84

8.26

-

12.70

4.83

0.51

3.53 4.09

3.56 4.83

1.14 1.40

2.03

MAX.

10.67

3.43

6.86

9.28

6.35

14.73

5.33

1.14

0.64 0.30

2.92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%

35

35

MBR1040

0.84

0.57

15

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward

Rectified Current (See Fig.1)

Peak Forward Surge Current

8.3ms single half sine-wave

superimposed on rated load (JEDEC METHOD)
Voltage Rate of Change (Rated VR)

Maximum Forward
Voltage

Maximum DC Reverse Cu rrent
at Rated DC Blocking Voltage

Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)

Operating Temperature Range

Storage Temperature Range

@ I
@ I

F

=20A

F

=10A

@T

125 C

C

=

TJ =25 C

TJ =125 C

@TJ =25 C

@TJ =125 C

SYMBOL

RRM

V

RMS

V

DC

V

(AV)

I

FSM

I

dv/dt

F

V

R

I

R

0JC

J

C

J

T

STG

T

MBR1030

MBR1035

30
21
30

NOTES : 1.Thermal Resistance Junction to Case.

2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

24.5

40
28
40

10

150

10000

0.1

2.5

400

-55 to +150

-55 to +175

MBR1045

45

31.5
45

MBR1050

50
35
50

MBR1060

0.95

0.70

25

60
42
60

UNIT

V
V
V

A

A

V/us

V

mA

C/W

pF

C
C

REV . 3, 13-S e p-2001 , K THA08

RATING AND CHARACTERISTIC CURVES
MBR 1030 thru M B R1060

FIG.1 - FORWARD CURRENT DERATING CURVE

10

8

6

4

RESISTIVE OR

2

INDUCTIVE LOAD

AVERAGE FORWARD CURRENT

AMPERES

0

0

25

50

75 100 125 150

CASE TEMPERATURE , C

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

100

10

TJ= 100 C

1.0

REVERSE CURRENT ,(mA)

0.1

TJ= 75 C

175

FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURREN T

150

125

100

75

50

25

8.3ms Single Half-Sine-Wave
(JEDEC METHOD)

0

PEAK FORWARD SURG E CURRENT,

AMPERES

1 5 10 50 1002

20

NUMBER OF CYCLES AT 60Hz

FIG.4 - TYPICAL FORWARD CHARACT ERISTICS

100

100

MBR1030 ~ M BR 1045

MBR1050 ~ MBR1060

1.0

1.0

10

10

0.01

TJ= 25 C

INSTANTANEOUS

0.001
0

20 40

60 80 100

PERCE NT OF RATED PEAK REVERS E VOLTAGE, (%)

10000

1000

CAPACITANCE , (pF)

TJ= 25 C, f= 1MHz

100

0.1

INSTANTANEOU S FOR WARD CURR ENT ,(A)

INSTANTANEOU S FOR WARD CURR ENT ,(A)

0.1

120

140

0.1

0.1

0.2 0.3

INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1

REVERSE VOLTAGE , VOLTS

10

4

0.4 0.5 0.6

100

TJ= 25 C

PULSE WIDTH 300us
2% Duty cycle

0.9

0.8

0.7

1.0

REV. 3, 13-Sep-2001, KTHA08