Lite-On HSDL-3220 User Manual

HSDL-3220
12345678
TRANSMITTER
HSDL-3220
CX1
CX2
CX4
SD (5)
RXD (4)
V
CC
V
CC
(6)
IOV
CC
(7)
GND (8)
V
led
R1
CX3
TXD (3)
LED C (2)
LED A (1)
RECEIVER
SHIELD
IrDA® Data Compliant Low Power 4.0 Mbit/s Infrared Transceiver
Data Sheet
Description
The HSDL-3220 is a new generation low profile high speed infrared transceiver module that provides inter­face between logic and IR signals for through-air, serial, half-duplex IR data-link. The module is fully compliant to IrDA Physical Layer specification version 1.4 low power from 9.6kbit/s to 4.0 Mbit/s (FIR) and is IEC825­Class 1 Eye Safe.
The HSDL-3220 can be shutdown completely to achieve very low power consumption. In the shutdown mode, the PIN diode will be inactive and thus producing very little photocurrent even under very bright ambient light. It is also designed to interface to input/output logic circuits as low as 1.8V. These features are ideal for mobile devices that require low power consumption.
Features
Fully compliant to IrDA 1.4 physical layer low power specication from 9.6 kbit/s to 4.0 Mbit/s (FIR)
Miniature package – Height: 2.5 mm – Width: 8.0 mm – Depth: 3.0 mm
Typical link distance > 50 cm
Guaranteed temperature performance, -25o to 70oC
Critical parameters are guaranteed over temperature and supply voltage
Low power consumption –
Low shutdown current
– Complete shutdown of TXD, RXD and PIN diode
Excellent EMI performance
Vcc supply 2.7 to 3.6 Volts
Interfacing with I/O logic circuits as low as 1.8 V
Lead-free package
LED stuck-high protection
Designed to accommodate light loss with cosmetic
windows
IEC 825-class 1 eye safe
Applications
Mobile telecom – Mobile phones – Smart phones – Pagers
Data communication – Pocket PC handheld products
Figure 1. Functional block diagram of HSDL-3220.
Figure 2. Rear view diagram with pinout.
– Personal digital assistants – Portable printers
Digital imaging – Digital cameras – Photo-imaging printers
Electronic wallet
Small industrial & medical instrumentation
– General data collection devices – Patient & pharmaceutical data collection devices
Application Support Information
Marking Information
The unit is marked with ‘yyww’ on the shield:
yy = year
ww = work week tact them through your local sales representatives for additional details.
Order Information
Part Number Packaging Type Package Quantity
HSDL-3220-021 Tape and Reel Front View 2500
I/O Pins Conguration Table
Pin Symbol Description I/O Type Notes
1 LED A LED Anode I 1
2 LED C LED Cathode 2
3 TXD Transmit Data. Active High. I 3
4 RXD Receive Data. Active Low. O 4
5 SD Shutdown. Active High. I 5
6 Vcc Supply Voltage 6
7 IOVcc Input/Output ASIC Vcc 7
8 GND Ground 8
- Shield EMI Shield 9
Recommended Application Circuit Components
Component Recommended Value Notes
R1 5.6Ω ± 5%, 0.25 watt for 2.7 ≤Vled< 3.3V 10Ω ± 5%, 0.25 watt for 3.3 ≤Vled<4.2V 15Ω ± 5%, 0.25 watt for 4.2 ≤Vled< 5.5V
CX1, CX4 0.47 µF ± 20%, X7R Ceramic 10
CX2, CX3 6.8 µF ± 20%, Tantalum 11
Notes:
1. Tied through external series resistor, R1, to regulated Vled from 2.7 to 5.5V. Please refer to table above for recommended series resistor value.
2. Internally connected to LED driver. Leave this pin unconnected.
3. This pin is used to transmit serial data when SD pin is low. If this pin is held high for longer than 50 µs, the LED is turned o. Do NOT oat this
pin.
4. This pin is capable of driving a standard CMOS or TTL load. No external pull-up or pull-down resistor is required. The pin is in tri-state when
the transceiver is in shutdown mode. The receiver output echoes transmitted signal.
5. The transceiver is in shutdown mode if this pin is high for more than 400 µs. On falling edge of this signal, the state of the TXD pin sampled
and used to set receiver low bandwidth (TXD=low) or high bandwidth (TXD=high) mode. Refer to the section ”Bandwidth selection timing” for programming information. Do NOT oat this pin.
6. Regulated, 2.7 to 3.6 Volts.
7. Connect to ASIC logic controller Vcc voltage or supply voltage. The voltage at this pin must be equal to or less than supply voltage.
8. Connect to system ground.
9. Connect to system ground via a low inductance trace. For best performance, do not connect directly to the transceiver pin GND.
10. CX1 must be placed within 0.7 cm of the HSDL-3220 to obtain optimum noise immunity.
11. In environments with noisy power supplies, including CX2, as shown in Figure 1, can enhance supply ripple rejection performance.
2
Bandwidth Selection Timing
V
IH
50%
t
S
t
H
V
IL
50%50%TXD
SD/MODE
V
IL
V
IH
50%
t
S
t
H
V
IL
50%50%TXD
SD/MODE
V
IH
V
IL
Figure 3. Bandwidth selection timing at SIR/MIR mode. Figure 4. Bandwidth selection timing at FIR mode.
Setting the transceiver to SIR/MIR Mode (9.6 kbit/s to
1.152 Mbit/s)
1. Set SD/Mode input to logic HIGH
2. TXD input should remain at logic LOW
3. After waiting for tS ≥ 25 ns, set SD/Mode to logic LOW,
the HIGH to LOW negative edge transition will deter­mine the receiver bandwidth
4. Ensure that TXD input remains low for tH ≥ 100 ns, the
receiver is now in SIR/MIR mode
5. SD input pulse width for mode selection should be >
50 ns.
Setting the transceiver to FIR (4.0 Mbit/s) Mode
1. Set SD/Mode input to logic HIGH
2. After SD/Mode input remains HIGH at > 25 ns, set TXD input to logic HIGH, wait tS ≥ 25 ns (from 50% of TXD rising edge till 50% of SD falling edge)
3. Then set SD/Mode to logic LOW, the HIGH to LOW negative edge transition will determine the receiver bandwidth
4. After waiting for tH ≥ 100 ns, set the TXD input to logic LOW
5. SD input pulse width mode selection should be > 50 ns.
Transceiver I/O Truth Table
Inputs Outputs
TXD Light Input to Receiver SD LED RXD Note
High Don’t Care Low On Not Valid
Low High Low O Low 12,13
Low Low Low O High
Don’t Care Don’t Care High O High
Notes:
12. In-band IrDA signals and data rates ≤ 4.0 Mbit/s
13. RXD logic low is a pulsed response. The condition is maintained for a duration dependent on pattern and
strength of the incident intensity.
CAUTIONS: The BiCMOS inherent to the design of this component increases the component’s susceptibility to damage from electrostatic discharge (ESD). It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.
3
Absolute Maximum Ratings
For implementations where case to ambient thermal resistance is ≤50°C/W.
Parameter Symbol Min. Max. Units Conditions
Storage Temperature T
-40 +100 °C
S
Operating Temperature TA -25 +70 °C
LED Anode Voltage V
0 6.5 V
LEDA
Supply Voltage VCC 0 6.5 V
Input Voltage: TXD, SD/Mode VI 0 6.5 V
Output Voltage: RXD VO 0 6.5 V
DC LED Transmit Current I
Average Transmit Current I
(DC) 50 mA
LED
(PK) 200 mA ≤ 90µs pulse width
LED
≤25% duty cycle
Recommended Operating Conditions
Parameter Symbol Min. Typ. Max. Units Conditions
Supply Voltage VCC 2.7 3.6 V
Input/Output Voltage IOVcc 1.8 Vcc V
Logic Input Voltage Logic High VIH IOVcc – 0.5 IOVcc V for TXD, SD/Mode
Logic High E
Receiver Input Irradiance 0.020 mW/cm2 1.152 Mbit/s < in-band signals ≤ 4.0 Mbit/s
≤ 4.0 Mbit/s
Logic Low EIL 0.3 µW/cm2 For in-band signals
LED (Logic High) Current I Pulse Amplitude
Receiver Data Rate 0.0096 4.0 Mbit/s
Note :
14. An in-band optical signal is a pulse/sequence where the peak wavelength, λp, is dened as 850 ≤ λp ≤ 900 nm, and the pulse characteristics are compliant with the IrDA Serial Infrared Physical Layer Link Specication v1.4.
Logic Low VIL 0 0.4 V
IH, min
0.0081 mW/cm
2
≤ 1.152 Mbit/s
E
500 mW/cm
IH, max
150 mA
LEDA
2
9.6kbit/s ≤ in-band signals
[14]
[14]
9.6 kbit/s ≤ in-band signals
[14]
[14]
4
Electrical and Optical Specications
Specications (Min. and Max. values) hold over the recommended operating conditions unless otherwise noted. Unspecied test conditions may be anywhere in their operating range. All typical values (Typ.) are at 25°C, Vcc set to
3.0V and IOVcc set to 1.8V unless otherwise noted.
Parameter Symbol Min. Typ. Max. Units Conditions
Receiver
Viewing Angle 30 °
Peak Sensitivity Wavelength λp 880 nm
TXD
2
≥ VIH,
RXD Output Voltage Logic High VOH IOVCC – 0.2 IOVCC V I
Logic Low VOL 0 0.4 V I
RXD Pulse Width (SIR)
RXD Pulse Width (MIR)
RXD Pulse Width (FIR)
[15]
tPW (SIR) 1 4.0 µs θ ≤ 15°, CL = 9 pF
[16]
tPW(MIR) 100 500 ns θ ≤ 15°, CL = 9 pF
[16]
tPW(FIR) 80 175 ns θ ≤ 15°, CL = 9 pF
= -200 µA, EI ≤ 0.3 µW/cm
OH
= 200 µA, EI ≥ 8.1 µW/cm2
OL
RXD Rise and Fall Times tr, tf 60 ns CL = 9 pF
Receiver Latency Time
Receiver Wake Up Time
[17]
[18]
tW 50 100 µs
tL 25 50 µs
Transmitter
Radiant Intensity IEH 10 45 mW/sr I V
= 150 mA, θ ≤ 15°, V
LEDA
≤ VIL, Ta=25°C
SD
Viewing Angle 30 60 °
Peak Wavelength λp 875 nm
Spectral Line Half Width ∆λ 35 nm
TXD Input Current High IH 10 µA V
Low IL 10 µA 0 ≤ V
LED ON Current I
150 mA V
LEDA
≥ VIH
TXD
≤ VIL
TXD
≥ VIH, R1=5.6ohm, Vled=3.0V
TXD
TXD Pulse Width (SIR) tPW (SIR) 1.5 1.6 1.8 µs tPW (TXD) = 1.6 µs at 115.2 kbit/s
TXD Pulse Width (MIR) tPW(MIR) 148 217 260 ns tPW (TXD) = 217 ns at 1.152 Mbit/s
TXD Pulse Width (FIR) tPW(FIR) 115 125 135 ns tPW(TXD)=125 ns at 4.0 Mbit/s
Maximum Optical PW
t
50 100 µs
PW(max.)
[19]
TXD Rise and fall Time (Optical) tr, tf 600 ns tPW(TXD) = 1.4 µs at 115.2 kbit/s
40 ns tPW (TXD) = 125 ns at 4.0 Mbit/s
LED Anode On-State Voltage V
1.6 2.1 V I
ON(LEDA)
=150 mA, V
LEDA
TXD≥VIH
Transceiver
Supply Current Shutdown I
Idle I
Notes:
15. For in-band signals from 9.6 kbit/s to 115.2 kbit/s, where 9 µW/cm2 ≤ EI ≤ 500 mW/cm2.
16. For in-band signals from 0.576 Mbit/s to 4.0 Mbit/s, where 22.5 µW/cm2 ≤ EI ≤ 500 mW/cm2.
17. Latency time is dened as the time from the last TxD light output pulse until the receiver has recovered full sensitivity.
18. Receiver wake up time is measured from Vcc power on or SD pin high to low transition to a valid RXD output.
19. The maximum optical PW is the maximum time the LED remains on when the TXD is constantly high. This is to prevent long turn on time of
the LED for eye safety protection.
0.1 1 µA VSD ≥ V
CC1
1.8 3.0 mA VSD ≤ VIL, V
CC2
Ta= 25°C
IH,
≤ VIL, EI=0
TXD
5
Figure 5. RxD output waveform.
t
f
V
OH
90%
50%
10%
V
OL
t
pw
t
r
t
f
LED OFF
90%
50%
10%
LED ON
t
pw
t
r
t
pw (MAX.)
TXD
LED
RX LIGHT
t
RW
RXD
SD
Figure 9. Radiant Intensity vs I
LEDA
.
I
LEDA
(A)
RADIANT INTENSITY (mW/sr)
0.10 0.200.15 0.30 0.350.25
120
100
80
60
40
20
0
Figure 10. V
LEDA
vs I
LEDA
.
I
LEDA
(A)
V
LEDA
(V)
0.10 0.200.15 0.30 0.350.25
2.4
2.2
2.0
1.8
1.6
1.4
Figure 6. LED optical waveform.
Figure 7. TxD “Stuck On” protection waveform.
6
Figure 8. Receiver wakeup time waveform.
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