Page 1
4N25/4N26/4N27/4N28
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection
FEATURES
6
B
5
C
4
E
i179004
i179004
1
A
C
2
3
NC
DESCRIPTION
The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler.This family includes the
4N25/4N26/4N27/4N28. Each optocoupler consists of
gallium arsenide infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 V
isolation test volt-
RMS
age. This isolation performance is accomplished
through special Vishay manufacturing process.
Compliance to DIN EN 60747-5-2 (VDE0884)/DIN EN
60747-5-5 pending partial discharge isolation specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001
quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler.
The devices are also available in lead formed configuration suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.
Note:
For additional design information see Application Note 45 Normalized Curves
AGENCY APPROVALS
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• Isolation Test Voltage 5300 V
RMS
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance
< 0.5 pF
e3
• Industry Standard Dual-in-line 6-pin
Package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATIONS
• AC Mains Detection
• Reed relay driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise Rejection
ORDER INFORMATION
PART REMARKS
4N25 CTR > 20 %, DIP-6
4N26 CTR > 20 %, DIP-6
4N27 CTR > 10 %, DIP-6
4N28 CTR > 10 %, DIP-6
4N25-X006 CTR > 20 %, DIP-6 400 mil (option 6)
4N25-X007 CTR > 20 %, SMD-6 (option 7)
4N25-X009 CTR > 20 %, SMD-6 (option 9)
4N26-X006 CTR > 20 %, DIP-6 400 mil (option 6)
4N26-X007 CTR > 20 %, SMD-6 (option 7)
4N26-X009 CTR > 20 %, SMD-6 (option 9)
4N27-X007 CTR > 10 %, SMD-6 (option 7)
4N27-X009 CTR > 10 %, SMD-6 (option 9)
4N28-X009 CTR > 10 %, SMD-6 (option 9)
Note:
For additional information on the available options refer to Option Information.
Document Number 83725
Rev. 1.5, 27-Feb-07
For technical support, please contact: optocoupler.answers@vishay.com
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1
Page 2
4N25/4N26/4N27/4N28
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1, 2)
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
INPUT
Reverse voltage
Forward current
Surge current t < 10 µs
Power dissipation
I
P
V
R
I
F
FSM
diss
6.0 V
60 mA
2.5 A
100 mW
OUTPUT
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector current
Collector currrent t < 1.0 ms
Power dissipation
V
V
P
CEO
EBO
I
C
I
C
diss
70 V
7.0 V
50 mA
100 mA
150 mW
COUPLER
Isolation test voltage
V
ISO
5300
V
RMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between emitter
and detector
≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE0303, part 1 175
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
= 500 V, T
V
IO
= 500 V, T
V
IO
= 25 °C R
amb
= 100 °C R
amb
T
T
IO
IO
stg
amb
T
j
12
10
11
10
- 55 to + 150 °C
- 55 to + 100 °C
100 °C
Ω
Ω
Soldering temperature max.10 s, dip soldering:
distance to seating plane
T
sld
260 °C
≥ 1.5 mm
Note:
1)
T
= 25 °C unless otherwise specified.
amb
2)
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
1, 2)
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
INPUT
Forward voltage
Reverse current
Capacitance
3)
3)
IF = 50 mA V
VR = 3.0 V I
= 0 V C
V
R
F
R
O
1.3 1.5 V
0.1 100 µA
25 pF
OUTPUT
Collector-base breakdown voltage
Collector-emitter breakdown
3)
voltage
Emitter-collector breakdown
3)
voltage
3)
IC = 100 µA BV
IC = 1.0 mA BV
IE = 100 µA BV
CBO
CEO
ECO
70 V
30 V
7.0 V
4N25 5.0 50 nA
I
CEO
(dark)
3)
VCE = 10 V, (base open)
4N26 5.0 50 nA
4N27 5.0 50 nA
4N28 10 100 nA
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Document Number 83725
Rev. 1.5, 27-Feb-07
Page 3
4N25/4N26/4N27/4N28
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
1, 2)
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
(dark)
3)
I
CBO
Collector-emitter capacitance
VCB = 10 V, (emitter open)
= 0 C
V
CE
CE
2.0 20 nA
6.0 pF
COUPLER
Isolation test voltage
3)
Saturation voltage, collector-emitter
Resistance, input output
3)
Peak, 60 Hz
= 2.0 mA, IF = 50 mA V
I
CE
VIO = 500 V R
Capacitance (input-output) f = 1.0 MHz
Note:
1)
T
= 25 °C unless otherwise specified.
amb
2)
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
3)
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.
V
IO
CE(sat)
IO
C
IO
5300 V
0.5 V
100 GΩ
0.5 pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
DC Current Transfer Ratio
Note:
1)
Indicates JEDEC registered values.
1)
VCE = 10 V, IF = 10 mA
4N25
4N26
4N27
4N28
CTR
CTR
CTR
CTR
DC
DC
DC
DC
20 50 %
20 50 %
10 30 %
10 30 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
= 10 V, IF = 10 mA,
V
Rise and fall times
CE
= 100 Ω
R
L
t
, t
r
f
2.0 µs
TYPICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified
amb
1.4
-Forward Voltage (V)
F
V
i4n25_01
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TA= - 55 °C
TA= 25 °C
TA= 85 °C
IF- Forward Current (mA)
Figure 1. Forward Voltage vs. Forward Current
1001010.1
1.5
Normalized to:
Vce = 10 V,I
CTRce(sat) = 0.4 V
1.0
T
= 25 °C
A
0.5
NCTR - Normalized CTR
0.0
0 10 100
i4n25_02
= 10 mA, TA= 25 °C
F
1
- LED Current (mA)
I
F
NCTR(SAT)
NCTR
Figure 2. Normalized Non-Saturated and Saturated CTR vs.
LED Current
Document Number 83725
Rev. 1.5, 27-Feb-07
For technical support, please contact: optocoupler.answers@vishay.com
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Page 4
4N25/4N26/4N27/4N28
Vishay Semiconductors
1.5
Normalized to:
Vce = 10 V,
CTRce(sat) Vce = 0.4 V
IF= 10 mA, T
= 25 °C
A
1.0
= 50 °C
T
A
0.5
NCTR - Normalized CTR
0.0
NCTR(SAT)
NCTR
1001010.1
IF- LED Current (mA)
i4n25_03
Figure 3. Normalized Non-saturated and Saturated CTR vs.
LED Current
1.5
Normalized to:
Vce = 10 V,
IF = 10 mA,
CTRce(sat) Vce = 0.4 V
= 25 °C
T
A
1.0
T
= 70 °C
A
0.5
NCTR - Normalized CTR
0.0
NCTR(SAT)
NCTR
1001010.1
IF- LED Current (mA)
i4n25_04
Figure 4. Normalized Non-saturated and saturated CTR vs.
LED Current
35
30
25
50 °C
20
15
25 °C
85 °C
70 °C
10
5
Ice - Collector Current (mA)
i4n25_06
0
I
- LED Current (mA)
F
6050403020100
Figure 6. Collector-Emitter Current vs.
Temperature and LED Current
5
10
4
10
3
10
2
10
= 10 V
V
1
10
0
10
- 1
10
Iceo - Collector Emitter (nA)
- 2
10
i4n25_07
TA- Ambient Temperature (°C)
ce
Typical
100806040200- 20
Figure 7. Collector-Emitter Leakage Current vs. Temp.
1.5
Normalized to:
Vce = 10 V,I
CTRce(sat) Vce = 0.4 V
= 10 mA, T
F
= 25 °C
A
1.0
= 85 °C
T
A
0.5
NCTR - Normalized CTR
NCTR(SAT)
NCTR
0.0
IF- LED Current (mA)
i4n25_05
Figure 5. Normalized Non-saturated and saturated CTR vs.
LED Current
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4
1.5
Normalized to:
V
= 9.3 V,IF= 10 mA, T
Cb
= 25 °C
A
1.0
0.5
25 °C
50 °C
NCTRcb - Normalized CTRcb
0.0
1001010.1
i4n25_08
70 °C
0.1 1 10 100
- LED Current (mA)
I
F
Figure 8. Normalized CTRcb vs. LED Current and Temp.
Document Number 83725
Rev. 1.5, 27-Feb-07
Page 5
4N25/4N26/4N27/4N28
Vishay Semiconductors
10
Normalized to:
IF= 10 mA, TA= 25 °C
1
0.
1
Normalized Photocurrent
0.01
0.1 1 10 100
i4n25_09
IF- LED Current (mA)
Figure 9. Normalized Photocurrent vs. I
1.2
1.0
- 20 °C
0.8
Normalized to:
Ib = 20 µA,Vce = 10 V,T
0.6
NHFE - Normalized HFE
0.4
1 10 100 1000
i4n25_10
Ib - Base Current (µA)
25 °C
70 °C
= 25 °C
A
Nib,
Nib,
Nib,
Nib,
= - 20 °C
T
A
T
= 25 °C
A
= 50 °C
T
A
= 70 °C
T
A
and Temp.
F
1000
IF= 10 mA, TA= 25 °C
= 5.0 V,
- Propagation Delay (µs)
t
PLH
100
V
CC
t
PHL
10
t
PLH
Vth = 1.5 V
1
0.1 1 10 100
i4n25_12
RL - Collector Load Resistor (kΩ)
2.5
2.0
1.5
1.0
Figure 12. Propagation Delay vs. Collector Load Resistor
I
F
t
D
t
R
t
PLH
= 1.5 V
V
TH
t
t
PHL
t
F
S
i4n25_13
V
O
- Propagation Delay (µs)
t
PHL
Figure 10. Normalized Non-saturated HFE vs.
Base Current and Temperature
1.5
50 °C
70 °C
1.0
25 °C
- 20 °C
0.5
Vce = 0.4 V
0.0
NHFE(sat) - Normalized Saturated HFE
1 10 100 1000
i4n25_11
Ib - Base Current (µA)
Normalized to:
Vce = 10 V, Ib = 20 µA
= 25 °C
T
A
Figure 11. Normalized HFE vs. Base Current and Temp.
Document Number 83725
For technical support, please contact: optocoupler.answers@vishay.com
Rev. 1.5, 27-Feb-07
Figure 13. Switching Timing
F = 10 kHz
DF = 50 %
IF= 10 mA
i4n25_14
Figure 14. Switching Schematic
VCC= 5.0 V
R
L
V
O
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Page 6
4N25/4N26/4N27/4N28
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.
For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimen-
sions in the Package Section.
DIL300-6 Package Dimensions
DIP-6 Package Dimensions
0.248 (6.30)
0.256 (6.50)
0.039
(1.00)
Min.
0.018 (0.45)
0.022 (0.55)
i178004
4°
typ.
3
4
5
0.335 (8.50)
0.343 (8.70)
12
pin one ID
6
(0.45)
0.048
0.022 (0.55)
0.130 (3.30)
0.150 (3.81)
0.031 (0.80) min.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
3°- 9°
ISO Method A
0.300 (7.62)
typ.
18°
0.010 (0.25)
typ.
0.300 – 0.347
(7.62– 8.81)
14770
0.114 (2.90)
0.130 (3.0)
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Document Number 83725
Rev. 1.5, 27-Feb-07
Page 7
4N25/4N26/4N27/4N28
Vishay Semiconductors
Option 6
0.407 (10.36)
0.391 (9.96)
0.307 (7.8)
0.291 (7.4)
0.014 (0.35)
0.010 (0.25)
0.400 (10.16)
0.430 (10.92)
0.028 (0.7)
MIN.
Option 7
0.300 (7.62)
TYP.
0.315 (8.0)
MIN
.
0.331 (8.4)
MIN.
0.406 (10.3)
MAX.
0.180 (4.6)
0.160 (4.1)
0.0040 (0.102)
0.0098 (0.249)
Option 9
0.375 (9.53)
0.395 (10.03)
0.300 (7.62)
ref.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
min.
0.012 (0.30) typ.
15° max.
18450
Document Number 83725
Rev. 1.5, 27-Feb-07
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Page 8
4N25/4N26/4N27/4N28
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83725
Rev. 1.5, 27-Feb-07
Page 9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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