LITEON 4N 27 Datasheet

4N25/4N26/4N27/4N28

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

FEATURES

6

B

5

C

4

E

i179004

i179004

1

A

C

2

3

NC

DESCRIPTION

The 4N25 family is an Industry Standard Single Chan­nel Phototransistor Coupler.This family includes the
4N25/4N26/4N27/4N28. Each optocoupler consists of
gallium arsenide infrared LED and a silicon NPN pho­totransistor.

These couplers are Underwriters Laboratories (UL)
listed to comply with a 5300 V

isolation test volt-

RMS

age. This isolation performance is accomplished
through special Vishay manufacturing process.

Compliance to DIN EN 60747-5-2 (VDE0884)/DIN EN
60747-5-5 pending partial discharge isolation specifi­cation is available by ordering option 1.

These isolation processes and the Vishay ISO9001
quality program results in the highest isolation perfor­mance available for a commercial plastic phototransis­tor optocoupler.

The devices are also available in lead formed configu­ration suitable for surface mounting and are available
either on tape and reel, or in standard tube shipping
containers.

Note:
For additional design information see Application Note 45 Normal­ized Curves

AGENCY APPROVALS

• UL1577, File No. E52744 System Code H or J,
Double Protection

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• Isolation Test Voltage 5300 V

RMS

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance
< 0.5 pF

e3

• Industry Standard Dual-in-line 6-pin
Package

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

APPLICATIONS

• AC Mains Detection

• Reed relay driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise Rejec­tion

ORDER INFORMATION

PART REMARKS

4N25 CTR > 20 %, DIP-6

4N26 CTR > 20 %, DIP-6

4N27 CTR > 10 %, DIP-6

4N28 CTR > 10 %, DIP-6

4N25-X006 CTR > 20 %, DIP-6 400 mil (option 6)

4N25-X007 CTR > 20 %, SMD-6 (option 7)

4N25-X009 CTR > 20 %, SMD-6 (option 9)

4N26-X006 CTR > 20 %, DIP-6 400 mil (option 6)

4N26-X007 CTR > 20 %, SMD-6 (option 7)

4N26-X009 CTR > 20 %, SMD-6 (option 9)

4N27-X007 CTR > 10 %, SMD-6 (option 7)

4N27-X009 CTR > 10 %, SMD-6 (option 9)

4N28-X009 CTR > 10 %, SMD-6 (option 9)

Note:
For additional information on the available options refer to Option In­formation.

Document Number 83725
Rev. 1.5, 27-Feb-07

For technical support, please contact: [email protected]

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1

4N25/4N26/4N27/4N28

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

1, 2)

PARAMETER TEST CONDITION SYMBOL VAL UE UNIT

INPUT

Reverse voltage

Forward current

Surge current t < 10 µs

Power dissipation

I

P

V

R

I

F

FSM

diss

6.0 V

60 mA

2.5 A

100 mW

OUTPUT

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

Collector currrent t < 1.0 ms

Power dissipation

V

V

P

CEO

EBO

I

C

I

C

diss

70 V

7.0 V

50 mA

100 mA

150 mW

COUPLER

Isolation test voltage

V

ISO

5300

V

RMS

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Isolation thickness between emitter
and detector

≥ 0.4 mm

Comparative tracking index DIN IEC 112/VDE0303, part 1 175

Isolation resistance

Storage temperature

Operating temperature

Junction temperature

= 500 V, T

V

IO

= 500 V, T

V

IO

= 25 °C R

amb

= 100 °C R

amb

T

T

IO

IO

stg

amb

T

j

12

10

11

10

- 55 to + 150 °C

- 55 to + 100 °C

100 °C

Ω

Ω

Soldering temperature max.10 s, dip soldering:

distance to seating plane

T

sld

260 °C

≥ 1.5 mm

Note:

1)

T

= 25 °C unless otherwise specified.

amb

2)

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS

1, 2)

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

INPUT

Forward voltage

Reverse current

Capacitance

3)

3)

IF = 50 mA V

VR = 3.0 V I

= 0 V C

V

R

F

R

O

1.3 1.5 V

0.1 100 µA

25 pF

OUTPUT

Collector-base breakdown voltage

Collector-emitter breakdown

3)

voltage

Emitter-collector breakdown

3)

voltage

3)

IC = 100 µA BV

IC = 1.0 mA BV

IE = 100 µA BV

CBO

CEO

ECO

70 V

30 V

7.0 V

4N25 5.0 50 nA

I

CEO

(dark)

3)

VCE = 10 V, (base open)

4N26 5.0 50 nA

4N27 5.0 50 nA

4N28 10 100 nA

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Document Number 83725

Rev. 1.5, 27-Feb-07

4N25/4N26/4N27/4N28

Vishay Semiconductors

ELECTRICAL CHARACTERISTICS

1, 2)

PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT

(dark)

3)

I

CBO

Collector-emitter capacitance

VCB = 10 V, (emitter open)

= 0 C

V

CE

CE

2.0 20 nA

6.0 pF

COUPLER

Isolation test voltage

3)

Saturation voltage, collector-emitter

Resistance, input output

3)

Peak, 60 Hz

= 2.0 mA, IF = 50 mA V

I

CE

VIO = 500 V R

Capacitance (input-output) f = 1.0 MHz

Note:

1)

T

= 25 °C unless otherwise specified.

amb

2)

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

3)

JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27 and 4N28 respectively.

V

IO

CE(sat)

IO

C

IO

5300 V

0.5 V

100 GΩ

0.5 pF

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

DC Current Transfer Ratio

Note:

1)

Indicates JEDEC registered values.

1)

VCE = 10 V, IF = 10 mA

4N25

4N26

4N27

4N28

CTR

CTR

CTR

CTR

DC

DC

DC

DC

20 50 %

20 50 %

10 30 %

10 30 %

SWITCHING CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT

= 10 V, IF = 10 mA,

V

Rise and fall times

CE

= 100 Ω

R

L

t

, t

r

f

2.0 µs

TYPICAL CHARACTERISTICS

T

= 25 °C unless otherwise specified

amb

1.4

-Forward Voltage (V)

F

V

i4n25_01

1.3

1.2

1.1

1.0

0.9

0.8

0.7

TA= - 55 °C

TA= 25 °C

TA= 85 °C

IF- Forward Current (mA)

Figure 1. Forward Voltage vs. Forward Current

1001010.1

1.5

Normalized to:
Vce = 10 V,I

CTRce(sat) = 0.4 V

1.0
T

= 25 °C

A

0.5

NCTR - Normalized CTR

0.0

0 10 100

i4n25_02

= 10 mA, TA= 25 °C

F

1

- LED Current (mA)

I

F

NCTR(SAT)

NCTR

Figure 2. Normalized Non-Saturated and Saturated CTR vs.

LED Current

Document Number 83725
Rev. 1.5, 27-Feb-07

For technical support, please contact: [email protected]

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4N25/4N26/4N27/4N28

Vishay Semiconductors

1.5

Normalized to:
Vce = 10 V,

CTRce(sat) Vce = 0.4 V

IF= 10 mA, T

= 25 °C

A

1.0

= 50 °C

T

A

0.5

NCTR - Normalized CTR

0.0

NCTR(SAT)

NCTR

1001010.1

IF- LED Current (mA)

i4n25_03

Figure 3. Normalized Non-saturated and Saturated CTR vs.

LED Current

1.5

Normalized to:
Vce = 10 V,

IF = 10 mA,

CTRce(sat) Vce = 0.4 V

= 25 °C

T

A

1.0

T

= 70 °C

A

0.5

NCTR - Normalized CTR

0.0

NCTR(SAT)

NCTR

1001010.1

IF- LED Current (mA)

i4n25_04

Figure 4. Normalized Non-saturated and saturated CTR vs.

LED Current

35

30

25

50 °C

20

15

25 °C

85 °C

70 °C

10

5

Ice - Collector Current (mA)

i4n25_06

0

I

- LED Current (mA)

F

6050403020100

Figure 6. Collector-Emitter Current vs.

Temperature and LED Current

5

10

4

10

3

10

2

10

= 10 V

V

1

10

0

10

- 1

10

Iceo - Collector Emitter (nA)

- 2

10

i4n25_07

TA- Ambient Temperature (°C)

ce

Typical

100806040200- 20

Figure 7. Collector-Emitter Leakage Current vs. Temp.

1.5

Normalized to:
Vce = 10 V,I

CTRce(sat) Vce = 0.4 V

= 10 mA, T

F

= 25 °C

A

1.0

= 85 °C

T

A

0.5

NCTR - Normalized CTR

NCTR(SAT)
NCTR

0.0

IF- LED Current (mA)

i4n25_05

Figure 5. Normalized Non-saturated and saturated CTR vs.

LED Current

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4

1.5

Normalized to:

V

= 9.3 V,IF= 10 mA, T

Cb

= 25 °C

A

1.0

0.5
25 °C
50 °C

NCTRcb - Normalized CTRcb

0.0

1001010.1

i4n25_08

70 °C

0.1 1 10 100

- LED Current (mA)

I

F

Figure 8. Normalized CTRcb vs. LED Current and Temp.

Document Number 83725

Rev. 1.5, 27-Feb-07

4N25/4N26/4N27/4N28

Vishay Semiconductors

10

Normalized to:
IF= 10 mA, TA= 25 °C

1

0.

1

Normalized Photocurrent

0.01

0.1 1 10 100

i4n25_09

IF- LED Current (mA)

Figure 9. Normalized Photocurrent vs. I

1.2

1.0

- 20 °C

0.8

Normalized to:
Ib = 20 µA,Vce = 10 V,T

0.6

NHFE - Normalized HFE

0.4

1 10 100 1000

i4n25_10

Ib - Base Current (µA)

25 °C

70 °C

= 25 °C

A

Nib,
Nib,
Nib,
Nib,

= - 20 °C

T

A

T

= 25 °C

A

= 50 °C

T

A

= 70 °C

T

A

and Temp.

F

1000

IF= 10 mA, TA= 25 °C

= 5.0 V,

- Propagation Delay (µs)

t

PLH

100

V

CC

t

PHL

10

t

PLH

Vth = 1.5 V

1

0.1 1 10 100

i4n25_12

RL - Collector Load Resistor (kΩ)

2.5

2.0

1.5

1.0

Figure 12. Propagation Delay vs. Collector Load Resistor

I

F

t

D

t

R

t

PLH

= 1.5 V

V

TH

t

t

PHL

t

F

S

i4n25_13

V

O

- Propagation Delay (µs)

t

PHL

Figure 10. Normalized Non-saturated HFE vs.

Base Current and Temperature

1.5

50 °C

70 °C

1.0

25 °C

- 20 °C

0.5

Vce = 0.4 V

0.0

NHFE(sat) - Normalized Saturated HFE

1 10 100 1000

i4n25_11

Ib - Base Current (µA)

Normalized to:
Vce = 10 V, Ib = 20 µA

= 25 °C

T

A

Figure 11. Normalized HFE vs. Base Current and Temp.

Document Number 83725

For technical support, please contact: [email protected]

Rev. 1.5, 27-Feb-07

Figure 13. Switching Timing

F = 10 kHz
DF = 50 %

IF= 10 mA

i4n25_14

Figure 14. Switching Schematic

VCC= 5.0 V

R

L

V

O

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4N25/4N26/4N27/4N28

Vishay Semiconductors

PACKAGE DIMENSIONS in inches (millimeters)

For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.

For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimen-

sions in the Package Section.

DIL300-6 Package Dimensions

DIP-6 Package Dimensions

0.248 (6.30)

0.256 (6.50)

0.039

(1.00)

Min.

0.018 (0.45)

0.022 (0.55)

i178004

4°

typ.

3

4

5

0.335 (8.50)

0.343 (8.70)

12

pin one ID

6

(0.45)

0.048

0.022 (0.55)

0.130 (3.30)

0.150 (3.81)

0.031 (0.80) min.

0.031 (0.80)

0.035 (0.90)

0.100 (2.54) typ.

3°- 9°

ISO Method A

0.300 (7.62)
typ.

18°

0.010 (0.25)
typ.

0.300 – 0.347
(7.62– 8.81)

14770

0.114 (2.90)

0.130 (3.0)

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Document Number 83725

Rev. 1.5, 27-Feb-07

4N25/4N26/4N27/4N28

Vishay Semiconductors

Option 6

0.407 (10.36)

0.391 (9.96)

0.307 (7.8)

0.291 (7.4)

0.014 (0.35)

0.010 (0.25)

0.400 (10.16)

0.430 (10.92)

0.028 (0.7)
MIN.

Option 7

0.300 (7.62)
TYP.

0.315 (8.0)
MIN

.

0.331 (8.4)
MIN.

0.406 (10.3)
MAX.

0.180 (4.6)

0.160 (4.1)

0.0040 (0.102)

0.0098 (0.249)

Option 9

0.375 (9.53)

0.395 (10.03)

0.300 (7.62)
ref.

0.020 (0.51)

0.040 (1.02)

0.315 (8.00)
min.

0.012 (0.30) typ.

15° max.

18450

Document Number 83725
Rev. 1.5, 27-Feb-07

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4N25/4N26/4N27/4N28

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,

damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death

associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 83725

Rev. 1.5, 27-Feb-07

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

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Revision: 08-Apr-05 1