LITEON 1N5819, 1N5818, 1N5817 Datasheet
LITE-ON
SEMICONDUCTOR
1N5817 thru 1N5819
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANI CAL DA T A
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
REVERSE VOL TAGE FORWARD CURRENT -
DO-41
A
Dim.
A
B
C
D
All Dimensions in millimeter
B
DO-41
Min.
25.4
4.10
0.71
2.00
20 to 40
1.0
Ampere
A
D
Max.
-
5.20
0.86
2.70
Volts
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load , derate cu rr e n t b y 20%
1N5817
20
14
20
0.450
0.750
90 C
SYMBOL
RRM
V
RMS
V
DC
V
(AV)
I
FSM
I
F
V
F
V
R
I
J
C
0JA
R
J
T
STG
T
CHARACTERISTICS
Maximum Recurrent Peak Rev erse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectif ied Curre nt
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
@T
A
=
@TJ=25 C
@TJ=100 C
1N5818
30
21
30
1.0
25
0.550 0.600
0.875
1
10
110
80
-55 to +125
-55 to +150
REV. 2, 01-Dec-2000, KDHC01
1N5819
40
28
40
0.900
UNIT
V
V
V
A
A
V
V
mA
mA
pF
C/W
C
C
RATING AND CHARACTERISTIC CURVES
1N5817 thru 1N5819
FIG.1 - FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
AVERAGE FORWARD CURRENT
SINGLE PHASE HALF WAVE 60Hz
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0.1
20
100
40
60 80 100 120
AMBIENT TEMPERATURE , C
FIG.3 - TYPICAL JUNCTION CAPACITANCE
140
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
20
10
Pulse width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES A T 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1N5817
100
1N5818
1N5819
1.0
CAPACITANCE , ( p F)
10
1
TJ= 25 C, f= 1MHz
4
REVERS E VOLTAGE , VOLTS
10
100
INSTANTANEOUS FORWARD CURRENT ,(A)
TJ= 25 C
PULSE WIDTH 300us
0.1
0.2
0
0.4
0.6 0.8
1.0 1.2
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
REV. 2, 01-Dec-2000, KDHC01
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