Linear Technology LT1683EG, LT1683IG Datasheet

LT1683
FEATURES
Greatly Reduced Conducted and Radiated EMI
Low Switching Harmonic Content
Independent Control of Output Switch Voltage and Current Slew Rates
Greatly Reduced Need for External Filters
Dual N-Channel MOSFET Drivers
20kHz to 250kHz Oscillator Frequency
Easily Synchronized to External Clock
Regulates Positive and Negative Voltages
Easier Layout Than with Conventional Switchers
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APPLICATIO S
Power Supplies for Noise Sensitive Communication Equipment
EMI Compliant Offline Power Supplies
Precision Instrumentation Systems
Isolated Supplies for Industrial Automation
Medical Instruments
Data Acquisition Systems
, LTC and LT are registered trademarks of Linear Technology Corporation.
Push-Pull DC/DC Controller
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DESCRIPTIO
The LT®1683 is a switching regulator controller designed to lower conducted and radiated electromagnetic interfer­ence (EMI). Ultralow noise and EMI are achieved by controlling the voltage and current slew rates of external N-channel MOSFET switches. Current and voltage slew rates can be independently set to optimize harmonic content of the switching waveforms vs efficiency. The LT1683 can reduce high frequency harmonic power by as much as 40dB with only minor losses in efficiency.
The LT1683 utilizes a dual output (push-pull) current mode architecture optimized for low noise topologies. The IC includes gate drivers and all necessary oscillator, control and protection circuitry. Unique error amp cir­cuitry can regulate both positive and negative voltages. The oscillator may be synchronized to an external clock for more accurate placement of switching harmonics.
Protection features include gate drive lockout for low VIN, opposite gate lockout, soft-start, output current limit, short-circuit current limiting, gate drive overvoltage clamp and input supply undervoltage lockout.
TYPICAL APPLICATIO
Ultralow Noise 48V to 5V DC/DC Converter
51k
1N4148
11V
23.2k
976
1.2nF
25k
25k
510
0.5W
FZT853
2N3904
68µF 20V
14 2
SHDN
5
V5
6
SYNC
7
C
16.9k
3.3k
3.3k
1.5k
T
8
R
T
16
R
VSL
15
R
CSL
12
V
C
22nF0.22µF
SS
10nF
10µF
20V
V
IN
LT1683
GND
17
1113
GCL
CAP A
GATE A
CAP B
GATE B
PGND
NFB
8.2V
3
5pF
1
5pF
18
19
Si9422
4
CS
20
9
FB
10
48V
39µF 63V
MBR0530
U
10pF 200V
Si9422
30pF
MIDCOM 31244
MBRS340
MBRS340
10pF 200V
30pF
0.1
22µH
150µF
OS-CON
OPTIONAL
B
22µH
2×100µF
POSCAP
7.50k
2.49k
A
1683 TA01
5V/2A
200µV/DIV
20mV/DIV
5V Output Noise
(Bandwidth = 100MHz)
A
B
5µs/DIV
1683 TA01a
200µV
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P-P
1
LT1683
1 2 3 4 5 6 7 8 9
10
TOP VIEW
G PACKAGE
20-LEAD PLASTIC SSOP
20 19 18 17 16 15 14 13 12 11
GATE A
CAP A
GCL
CS V5
SYNC
C
T
R
T
FB
NFB
PGND GATE B CAP B V
IN
R
VSL
R
CSL
SHDN SS V
C
GND
WW
W
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ABSOLUTE AXI U RATI GS
(Note 1)
Supply Voltage (VIN)................................................ 20V
Gate Drive Current .....................................Internal Limit
V5 Current .................................................Internal Limit
SHDN Pin Voltage.................................................... 20V
Feedback Pin Voltage (Trans. 10ms) ...................... ±10V
Feedback Pin Current............................................ 10mA
Negative Feedback Pin Voltage (Trans. 10ms)........ ±10V
CS Pin.......................................................................... 5V
GCL Pin ..................................................................... 16V
SS Pin.......................................................................... 3V
Operating Junction Temperature Range
(Note 3) ............................................ –40°C to 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
UUW
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
LT1683EG LT1683IG
T
= 150°C, θJA = 110°C/W
JMAX
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, VC = 0.9V, VFB = V
The denotes the specifications which apply over the full operating
, R
, R
REF
VSL
= 16.9k, RT = 16.9k and
CSL
other pins open unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Error Amplifiers
V
REF
I
FB
FB
REG
V
NFR
I
NFR
NFB g
m
I
ESK
I
ESRC
V
CLH
V
CLL
A
V
FB
OV
I
SS
2
Reference Voltage Measured at Feedback Pin 1.235 1.250 1.265 V Feedback Input Current VFB = V Reference Voltage Line Regulation 2.7V ≤ VIN 20V 0.012 0.03 %/V Negative Feedback Reference Voltage Measured at Negative Feedback Pin –2.56 –2.500 –2.45 V
Negative Feedback Input Current V Negative Feedback Reference Voltage Line Regulation 2.7V ≤ VIN 20V 0.009 0.03 %/V
REG
Error Amplifier Transconductance ∆IC = ±50µA 1100 1500 2200 µmho
Error Amp Sink Current VFB = V Error Amp Source Current VFB = V Error Amp Clamp Voltage High Clamp, VFB = 1V 1.27 V Error Amp Clamp Voltage Low Clamp, VFB = 1.5V 0.12 V Error Amplifier Voltage Gain 180 250 V/V FB Overvoltage Shutdown Outputs Drivers Disabled 1.47 V Soft-Start Charge Current VSS = 1V 9.0 12 µA
REF
with Feedback Pin Open
= V
NFB
NFR
+ 150mV, VC = 0.9V 120 200 350 µA
REF
– 150mV, VC = 0.9V 120 200 350 µA
REF
250 1000 nA
–37 –25 µA
700 2500 µmho
1683f
LT1683
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, VC = 0.9V, VFB = V
The denotes the specifications which apply over the full operating
, R
, R
REF
VSL
= 16.9k, RT = 16.9k and
CSL
other pins open unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Oscillator and Sync
f
MAX
f
SYNC
V
SYNC
R
SYNC
Gate Drives (Specifications Apply to Either A or B Unless Otherwise Noted)
DC
MAX
VG
ON
VG
OFF
IG
SO
IG
SK
V
INUVLO
Current Sense
t
IBL
V
SENSE
V
SENSEF
Slew Control (for the Following Slew Tests See Test Circuit in Figure 1b)
V
SLEWR
V
SLEWF
VI
SLEWR
VI
SLEWF
Supply and Protection
V
INMIN
I
VIN
V
SHDN
V
SHDN
I
SHDN
V5 5V Reference Voltage 6.5V VIN 20V, IV5 = 5mA 4.85 5 5.20 V
IV5
SC
Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired.
Note 2: Supply current specification includes loads on each gate as in Figure 1a. Actual supply currents vary with operating frequency, operating voltages, V5 load, slew rates and type of external FET.
Note 3: The LT1683E is guaranteed to meet performance specifications from 0°C to 70°C. Specifications over the –40°C to 125°C operating range
Max Switch Frequency 250 kHz Synchronization Frequency Range Oscillator Frequency = 250kHz 290 kHz SYNC Pin Input Threshold 0.7 1.4 2.0 SYNC Pin Input Resistance 40 k
Maximum Switch Duty Cycle R
VSL
= R
= 4.85k, 45 46 %
CSL
Osc Frequency = 25kHz
Gate On Voltage VIN = 12, GCL = 12 10 10.4 10.7 V
V
= 12, GCL = 8 7.6 7.9 8.1 V
IN
Gate Off Voltage VIN = 12V 0.2 0.35 V Max Gate Source Current VIN = 12V 0.3 A Max Gate Sink Current VIN = 12V 0.3 A Gate Drive Undervoltage Lockout (Note 5) V
= 6.5V, Gates Enabled 7.3 7.5 V
GCL
Switch Current Limit Blanking Time 100 ns Sense Voltage Shutdown Voltage VC Pulled Low 86 103 120 mV Sense Voltage Fault Threshold 230 300 mV
Output Voltage Slew Rising Edge R Output Voltage Slew Falling Edge R Output Current Slew Rising Edge (CS Pin Voltage) R Output Current Slew Falling Edge (CS Pin Voltage) R
Minimum Input Voltage (Note 4) V Supply Current (Note 2) R
= R
VSL
VSL
VSL
VSL
GCL
VSL
R
VSL
= 17k 26 V/µs
CSL
= R
= 17k 19 V/µs
CSL
= R
= 17k 2.1 V/µs
CSL
= R
= 17k 2.1 V/µs
CSL
= V
IN
= R
= 17k, VIN = 12 25 45 mA
CSL
= R
= 17k, VIN = 20 35 55 mA
CSL
2.55 3.6 V
Shutdown Turn-On Threshold 1.31 1.39 1.48 V Shutdown Turn-On Voltage Hysteresis 50 110 180 mV Shutdown Input Current Hysteresis 10 24 35 µA
6.5V ≤ V
20V, IV5 = –5mA 4.80 5 5.15 V
IN
5V Reference Short-Circuit Current VIN = 6.5V Source 10 mA
= 6.5V Sink –10 mA
V
IN
are assured by design, characterization and correlation with statistical process controls. The LT1683I is guaranteed and tested over the –40° to 125° operating temperature range.
Note 4: Output gate drivers will be enabled at this voltage. The GCL voltage will also determine drivers’ activity.
Note 5: Gate drivers are ensured to be on when V
is greater than the
IN
maximum value.
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LT1683
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TYPICAL PERFOR A CE CHARACTERISTICS
Feedback Voltage and Input Current vs Temperature
1.260
1.258
1.256
1.254
1.252
1.250
1.248
1.246
FEEDBACK VOLTAGE (V)
1.244
1.242
1.240 –50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
Feedback Overvoltage Shutdown vs Temperature
1.70
1.65
1.60
1.55
1.50
1.45
1.40
1.35
FEEDBACK VOLTAGE (V)
1.30
1.25
1.20 –50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
1683 G03
750 700 650
FB INPUT CURRENT (nA)
600 550 500 450 400 350 300 250
1683 G01
Error Amp Transconductance vs Temperature
2000 1900 1800 1700 1600 1500 1400 1300 1200
TRANSCONDUCTANCE (µmho)
1100 1000
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
Negative Feedback Voltage and Input Current vs Temperature
2.480
2.485
2.490
2.495
2.500
2.505
2.510
NEGATIVE FEEDBACK VOLTAGE (V)
2.515
2.520 –50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
Error Amp Output Current vs Feedback Pin Voltage from Nominal
500 400 300 200 100
0
–100
CURRENT (µA)
–200 –300 –400 –500
–400 –300 –200 –100 0 100 200 300 400
FEEDBACK PIN VOLTAGE FROM NOMINAL (mV)
1683 G04
1683 G02
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
–40°C
125°C
NFB INPUT CURRENT (µA)
25°C
1683 G05
VC Pin Threshold and Clamp Voltage vs Temperature
1.4
1.2
1.0
0.8
0.6
PIN VOLTAGE (V)
C
V
0.4
0.2
0
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
4
1683 G06
CS Pin Trip and CS Fault Voltage vs Temperature
240
220
200
180
160
140
CS PIN VOLTAGE (mV)
120
100
80
–50 –25 0 25 50 75 100 125 150
FAULT
TRIP
TEMPERATURE (°C)
1683 G07
SHDN Pin On and Off Thresholds vs Temperature
1.50
1.45
1.40
1.35
SHDN PIN VOLTAGE (V)
1.30
1.25 –50 –25 0 25 50 75 100 125 150
ON
OFF
TEMPERATURE (°C)
1683 G08
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TYPICAL PERFOR A CE CHARACTERISTICS
LT1683
SHDN Pin Hysteresis Current vs Temperature VIN Current vs Temperature
27
25
23
21
19
SHDN PIN CURRENT (µA)
17
15
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
1683 G09
24
WITH NO EXTERNAL MOSFETs
22
20
18
16
CURRENT (mA)
IN
V
14
12
10
VIN = 12 R
VIN = 20 R
VIN = 12 R
–50 –25 0 25 50 75 100 125 150
, R
CSL
, R
CSL
, R
CSL
TEMPERATURE (°C)
Gate Drive A/B High Voltage vs
Slope Compensation
110
100
90
80
70
PERCENT OF MAX CS VOLTAGE
60
50
10 20 30 40 50
0
DUTY CYCLE (%)
VC PIN = 0.9V
= 25°C
T
A
1683 G12
Temperature
10.7
10.6
10.5
10.4
10.3
10.2
10.1
10.0
9.90
GATE DRIVE A/B PIN VOLTAGE (V)
9.80
9.70 –50 –25 0 25 50 75 100 125 150
GCL = 12V
GCL = 6V
TEMPERATURE (°C)
VSL
VSL
VSL
= 5.7k
= 17k
= 17k
VIN = 12V NO LOAD
1683 G10
1683 G13
CS Pin to VC Pin Transfer Function
1.6 TA = 25°C
1.4
1.2
1.0
0.8
0.6
PIN VOLTAGE (V)
C
V
0.4
0.2
0
20 40 60 80 100 120
0
Gate Drive A/B Low Voltage vs Temperature
6.5
0.50
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
VIN = 12V
0.45 NO LOAD
0.40
0.35
0.30
0.25
0.20
0.15
0.10
GATE DRIVE A/B PIN VOLTAGE (V)
0.05
0
–50 –25 0 25 50 75 100 125 150
CS PIN VOLTAGE (mV)
1683 G11
TEMPERATURE (°C)
1683 G14
Gate Drive Undervoltage Lockout Voltage vs Temperature
7.3 GCL = 6V
7.2
7.1
7.0
6.9
6.8
6.7
PIN VOLTAGE (V)
IN
6.6
V
6.5
6.4
6.3
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
1683 G15
Soft-Start Current vs Temperature
9.5 SS VOLTAGE = 0.9V
9.3
9.1
8.9
8.7
8.5
8.3
8.1
SS PIN CURRENT (µA)
7.9
7.7
7.5
–50 –25 0 25 50 75 100 125 150
TEMPERATURE (°C)
1683 G16
V5 Voltage vs Load Current
5.08
5.06
5.04
5.02
5.00
V5 PIN VOLTAGE (V)
4.98
4.96 –10 –5 0 51015
–15
T = 125°C
T = 25°C
T = –40°C
LOAD CURRENT (mA)
1683 G17
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LT1683
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PI FU CTIO S
Part Supply
V5 (Pin 5): This pin provides a 5V output that can sink or
source 10mA for use by external components. V5 source current comes from V must be greater than 6.5V in order for this voltage to be in regulation. If this pin is used, a small capacitor (<1µF) may be placed on this pin to reduce noise. This pin can be left open if not used.
GND (Pin 11): Signal Ground. The internal error amplifier, negative feedback amplifier, oscillator, slew control cir­cuitry, V5 regulator, current sense and the bandgap refer­ence are referred to this ground. Keep the connection to this pin, the feedback divider and VC compensation net­work free of large ground currents.
SHDN (Pin 14): The shutdown pin can disable the switcher. Grounding this pin will disable all internal circuitry.
Increasing SHDN voltage will initially turn on the internal bandgap regulator. This provides a precision threshold for the turn on of the rest of the IC. As SHDN increases past
1.39V the internal LDO regulator turns on, enabling the control and logic circuitry.
24µA of current is sourced out of the pin above the turn on threshold. This can be used to provide hysteresis for the shutdown function. The hysteresis voltage will be set by the Thevenin resistance of the resistor divider driving this pin times the current sourced out. Above approximately
2.1V the hysteresis current is removed. There is approxi­mately 0.1V of voltage hysteresis on this pin as well.
The pin can be tied high (to V
. Sink current goes to GND. V
IN
for instance).
IN
IN
V
(Pin 17): Input Supply. All supply current for the part
IN
comes from this pin including gate drives and V5 regula­tor. Charge current for gate drives can produce current pulses of hundreds of milliamperes. Bypass this pin with a low ESR capacitor.
When V undervoltage lockout where the gate drivers are driven low. This, along with gate drive undervoltage lockout, prevents unpredictable behavior during power up.
PGND (Pin 20): Power Driver Ground. This ground comes from the MOSFET gate drivers. This pin can have several hundred milliamperes of current on it when the external MOSFETs are being turned off.
is below 2.55V the part will go into supply
IN
Oscillator
SYNC (Pin 6): The SYNC pin can be used to synchronize
the part to an external clock. The oscillator frequency should be set close to the external clock frequency. Synchronizing the clock to an external reference is useful for creating more stable positioning of the switcher volt­age and current harmonics. This pin can be left open or tied to ground if not used.
CT (Pin 7): The oscillator capacitor pin is used in conjunc­tion with RT to set the oscillator frequency. For RT = 16.9k:
C
(nf) = 129/f
OSC
RT (Pin 8): The oscillator resistor pin is used to set the charge and discharge currents of the oscillator capacitor. The nominal value is 16.9k. It is possible to adjust this resistance ±25% to set oscillator frequency more accu­rately.
OSC
(kHz)
6
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PI FU CTIO S
LT1683
Gate Drive
GATE A, GATE B (Pins 1, 19): These pins connect to the
gates of the external N-channel MOSFETs. GATE␣ A and GATE␣ B turn on with alternate clock cycles. These drivers are capable of sinking and sourcing at least 300mA.
The GCL pin sets the upper voltage of the gate drive. The gate pins will not be activated until V voltage as defined by the GCL pin (gate undervoltage lockout).
The gate drive outputs have current limit protection to safe guard against accidental shorts.
If the gate drive voltage is greater than about 1V the opposite gate drive is inhibited thus preventing cross conduction.
GCL (Pin 3): This pin sets the maximum gate voltage to the GATE␣ A and GATE␣ B pins to the MOSFET gate drives. This pin should be either tied to a Zener, a voltage source or VIN.
If the pin is tied to a Zener or a voltage source, the maximum gate drive voltage will be approximately V
– 0.2V. If it is tied to VIN, the maximum gate voltage
GCL
is approximately VIN – 1.6. Approximately 50µA of current can be sourced from this
pin if V This pin also controls undervoltage lockout of the gate
drives. If the pin is tied to a Zener or voltage source, the gate drive will not be enabled until VIN > V pin is tied to VIN, then undervoltage lockout is disabled.
There is an internal 19V Zener tied from this pin to ground to provide a fail-safe for maximum gate voltage.
GCL
< V
– 0.8V.
IN
reaches a minimum
IN
+ 0.8V. If this
GCL
The voltage slew rate is inversely proportional to this capacitance and proportional to the current that the part will sink and source on this pin. That current is inversely proportional to R
R
(Pin 15): A resistor to ground sets the current slew
CSL
rate for the external drive MOSFETs during switching. The minimum resistor value is 3.3k and the maximum value is 68k. The time to slew between on and off states of the MOSFET current will determine how the di/dt related harmonics are reduced. This time is proportional to R and RS (the current sense resistor) and maximum current. Longer times produce a greater reduction of higher fre­quency harmonics.
R
(Pin 16): A resistor to ground sets the voltage slew
VSL
rate for the drains of the external drive MOSFETs. The minimum resistor value is 3.3k and the maximum value is 68k. The time to slew between on and off states on the MOSFET drain voltage will determine how harmonics are reduced from this source. This time is proportional to R
, C
VSL
more rolloff of harmonics. C tance from CAP A or B to the drain of the MOSFET.
and the input voltage. Longer times produce
VA/B
VSL
.
CSL
is the equivalent capaci-
VA/B
Switch Mode Control
SS (Pin 3): The SS pin allows for ramping of the switch
current threshold at startup. Normally a capacitor is placed on this pin to ground. An internal 9µA current source will charge this capacitor up. The voltage on the VC pin cannot exceed the voltage on SS. Thus peak current will ramp up as the SS pin ramps up. During a short circuit fault the SS pin will be discharged to ground thus reinitializing soft­start.
Slew Control
CAP A, CAP B (Pins 2, 18): These pins are the feedback
nodes for the external voltage slewing capacitors. Nor­mally a small 1pf to 5pf capacitor is connected from this pin to the drain of its respective MOSFET.
When SS is below the VC clamp voltage the VC pin will closely track the SS pin.
This pin can be left open if not used.
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LT1683
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PI FU CTIO S
CS (Pin 4): This is the input to the current sense amplifier. It is used for both current mode control and current slewing of the external MOSFETs. Current sense is accom­plished via a sense resistor (RS) connected from the sources of the external MOSFETs to ground. CS is con­nected to the top of RS. Current sense is referenced to the GND pin.
The switch maximum operating current will be equal to
0.1V/RS. At CS = 0.1V, the gate drivers will be immediately turned off (no slew control).
If CS = 0.22V in addition to the drivers being turned off, V
C
and SS will be discharged to ground (short-circuit protec­tion). This will hasten turn off on subsequent cycles.
FB (Pin 9): The feedback pin is used for positive voltage sensing. It is the inverting input to the error amplifier. The noninverting input of this amplifier connects internally to a 1.25V reference.
If the voltage on this pin exceeds the reference by 220mV, then the output drivers will immediately turn off the external MOSFETs (no slew control). This provides for output overvoltage protection
NFB (Pin 10): The negative feedback pin is used for sensing a negative output voltage. The pin is connected to the inverting input of the negative feedback amplifier through a 100k source resistor. The negative feedback amplifier provides a gain of –0.5 to the FB pin. The nominal regulation point would be –2.5V on NFB. This pin should be left open if not used.
If NFB is being used then overvoltage protection will occur at 0.44V below the NFB regulation point.
At NFB < –1.8 current sense blanking will be disabled. VC (Pin 12): The compensation pin is used for frequency
compensation and current limiting. It is the output of the error amplifier and the input of the current comparator. Loop frequency compensation can be performed with an RC network connected from the VC pin to ground. The voltage on VC is proportional to the switch peak current. The normal range of voltage on this pin is 0.25V to 1.27V. However, during slope compensation the upper clamp voltage is allowed to increase with the compensation.
During a short-circuit fault the VC pin will be discharged to ground.
When this input is below 0.9V then the current sense blanking will be disabled. This will assist start up.
TEST CIRCUITS
20mA
5pF
CAP A/CAP B
GATE A/GATE B
Figure 1a. Typical Test Circuitry Figure 1b. Test Circuit for Slew
2
IN5819
ZVN3306A
1683 F01a
+
10
CAP A/CAP B
GATE A/GATE B
CS
5pF
0.1
0.9A
IN5819
Si4450DY
1683 F01b
+
10
8
1683f
BLOCK DIAGRA
+
NEGATIVE FEEDBACK
AMP
NFB
100k 50k
W
V
IN
C
IN
SHDN R
REGULATOR
V
IN
V
REG
V5
TO DRIVERS
R
CSL
R
CSL
LT1683
R
VSL
VSL
G
CL
C
VA
CAP A
FB
+
ERROR
AMP
SLEW
CONTROL
GATE A
CAP B
MA
C
VB
+
C
VC
V
C
C
SS
SS
1.25V
COMP
+
+
SENSE
AMP
GATE B
PGND
CS
MB
R
SENSE
SQ
R
T
R
T
C
T
C
T
OSCILLATOR
SYNC GND
FF
R
TQBQ
FF
SUB
1683 BD
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LT1683
OPERATIO
U
In noise sensitive applications switching regulators tend to be ruled out as a power supply option due to their propensity for generating unwanted noise. When switch­ing supplies are required due to efficiency or input/output constraints, great pains must be taken to work around the noise generated by a typical supply. These steps may include pre and post regulator filtering, precise synchro­nization of the power supply oscillator to an external clock, synchronizing the rest of the circuit to the power supply oscillator or halting power supply switching during noise sensitive operations. The LT1683 greatly simplifies the task of eliminating supply noise by enabling the design of an inherently low noise switching regulator power supply.
The LT1683 is a fixed frequency, current mode switching regulator with unique circuitry to control the voltage and current slew rates of the output switches. Current mode control provides excellent AC and DC line regulation and simplifies loop compensation.
Slew control capability provides much greater control over the power supply components that can create con­ducted and radiated electromagnetic interference. Com­pliance with EMI standards will be an easier task and will require fewer external filtering components.
The LT1683 uses two external N-channel MOSFETs as the power switches. This allows the user to tailor the drive conditions to a wide range of voltages and currents.
CURRENT MODE CONTROL
Referring to the block diagram. A switching cycle begins with an oscillator discharge pulse, which resets the RS flip-flop, turning on one of the external MOSFET drivers. The switch current is sensed across the external sense resistor and the resulting voltage is amplified and com­pared to the output of the error amplifier (VC pin). The driver is turned off once the output of the current sense amplifier exceeds the voltage on the VC pin. In this way pulse by pulse current limit is achieved. The toggle flip­flop ensures that the two MOSFETs are enabled on alter­nate clock cycles. Internal slope compensation is provided to ensure stability under high duty cycle conditions.
Output regulation is obtained using the error amp to set the switch current trip point. The error amp is a transconductance amplifier that integrates the difference between the feedback output voltage and an internal 1.25V reference. The output of the error amp adjusts the switch current trip point to provide the required load current at the desired regulated output voltage. This method of control­ling current rather than voltage provides faster input transient response, cycle-by-cycle current limiting for better output switch protection and greater ease in com­pensating the feedback loop. The VC pin is used for loop compensation and current limit adjustment. During nor­mal operation the VC voltage will be between 0.25V and
1.27V. An external clamp on VC or SS may be used for lowering the current limit.
The negative voltage feedback amplifier allows for direct regulation of negative output voltages. The voltage on the NFB pin gets amplified by a gain of – 0.5 and driven on to the FB input, i.e., the NFB pin regulates to –2.5V while the amplifier output internally drives the FB pin to 1.25V as in normal operation. The negative feedback amplifier input impedance is 100k (typ) referred to ground.
Soft-Start
Control of the switch current during start up can be obtained by using the SS pin. An external capacitor from SS to ground is charged by an internal 9µA current source. The voltage on VC cannot exceed the voltage on SS. Thus as the SS pin ramps up the VC voltage will be allowed to ramp up. This will then provide for a smooth increase in switch maximum current. SS will be discharged as a result of the CS voltage exceeding the short circuit threshold of approximately 0.22V.
Slew Control
Control of output voltage and current slew rates is achieved via two feedback loops. One loop controls the MOSFET drain dV/dt and the other loop controls the MOSFET dI/dt.
The voltage slew rate uses an external capacitor between CAP A or CAP B and the respective MOSFET drain. These integrating caps close the voltage feedback loop. The external resistor R
sets the current for the integrator.
VSL
10
1683f
OPERATIO
LT1683
U
The voltage slew rate is thus inversely proportional to both the value of capacitor and R
The current slew feedback loop consists of the voltage across the external sense resistor, which is internally amplified and differentiated. The derivative is limited to a value set by R proportional to both the value of sense resistor and R
The two control loops are combined internally so that a smooth transition from current slew control to voltage slew control is obtained. When turning on, the driver current will slew before voltage. When turning off, voltage will slew before current. In general it is desirable to have R
and R
VSL
Internal Regulator
Most of the control circuitry operates from an internal 2.4V low dropout regulator that is powered from VIN. The internal low dropout design allows VIN to vary from 2.7V to 20V with stable operation of the controller. When SHDN < 1.3V the internal regulator is completely disabled.
5V Regulator
A 5V regulator is provided for powering external circuitry. This regulator draws current from VIN and requires VIN to be greater than 6.5V to be in regulation. It can sink or source 10mA. The output is current limited to prevent against destruction from accidental short circuits.
Safety and Protection Features
There are several safety and protection features on the chip. The first is overcurrent limit. Normally the gate drivers will go low when the output of the internal sense amplifier exceeds the voltage on the VC pin. The VC pin is clamped such that maximum output current is attained when the CS pin voltage is 0.1V. At that level the outputs will be immediately turned off (no slew). The effect of this control is that the output voltage will foldback with overcurrent.
In addition, if the CS voltage exceeds 0.22V, the VC and SS pins will be discharged to ground also, resetting the soft­start function. Thus if a short is present this will allow for faster MOSFET turnoff and less MOSFET stress.
. The current slew rate is thus inversely
CSL
of similar value.
CSL
VSL
.
CSL.
If the voltage on the FB pin exceeds regulation by approxi­mately 0.22V, the outputs will immediately go low. The implication is that there is an overvoltage fault.
The voltage on GCL determines two features. The first is the maximum gate drive voltage. This will protect the MOSFET gate from overvoltage.
With GCL tied to a Zener or an external voltage source then the maximum gate driver voltage is approximately V
␣ – 0.2V. If GCL is tied to VIN, then the maximum gate
GCL
voltage is determined by VIN and is approximately VIN – 1.6V. There is an internal 19V Zener on the GCL pin that prevents the gate driver pin from exceeding approxi­mately 19V.
In addition, the GCL voltage determines undervoltage lockout of the gate drives. This feature disables the gate drivers if VIN is too low to provide adequate voltage to turn on the MOSFETs. This is helpful during start up to insure the MOSFETs have sufficient gate drive to saturate.
If GCL is tied to a voltage source or Zener less than 6.8V, the gate drivers will not turn on until VIN exceeds GCL voltage by 0.8V. For V insured to be off for VIN < 7.3V and they will be turned on by V
If GCL is tied to VIN, the gate drivers are always enabled (undervoltage lockout is disabled).
When driving a push pull transformer, it is important to make sure that both drivers are not on at the same time. Even though runaway cannot occur under such cross conduction with this chip because current slew is regu­lated, increased current would be possible. This chip has opposite gate lockout whereby when one MOSFET is on the other MOSFET cannot be turned on until the gate of the first drops below 1V. This insures that cross conduction will not occur.
The gate drives have current limits for the drive currents. If the sink or source current is greater than 300mA then the current will be limited.
The V5 regulator also has internal current limiting that will only guarantee ±10mA output current.
GCL
+ 0.8V.
above 6.5V, the gate drives are
GCL
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There is also an on chip thermal shutdown circuit that will turn off the outputs in the event the chip temperature rises to dangerous levels. Thermal shutdown has hysteresis that will cause a low frequency (<1kHz) oscillation to occur as the chip heats up and cools down.
The chip has an undervoltage lockout feature that will force the gate drivers low in the event that VIN drops below
Table 1. Safety and Protection Features
FEATURE FUNCTION EFFECT on GATE DRIVERS SLEW CONTROL EFFECT on VC, SS
Maximum Current Fault Turn Off FETs at Maximum Immediately Goes Low Overridden None
Switch Current (V
Short-Circuit Fault Turn Off FETs and Reset V
for Short-Circuit (V
Overvoltage Fault Turn Off Drivers If FB > V
(Output Overvoltage)
GCL Clamp Set Max Gate Voltage to Prevent Limits Max Voltage None None
FET Gate Breakdown
Gate Drive Disable Gate Drives When V Undervoltage Lockout Is Too Low. Set Via GCL Pin
Thermal Shutdown Turn Off Drivers If Chip Immediately Goes Low Overridden None
Temperature Is Too Hot
Opposite Gate Lockout Prevents Opposite Driver from Inhibits Turn On of None None
Turning on Until Driver Is Off Opposite Driver
(Cross Conduction in Transformer) VIN Undervoltage Lockout Disable Part When VIN 2.55V Immediately Goes Low Overridden None Gate Drive Source and Sink Current Limit Limit Gate Drive Current Limit Drive Current None None V5 Source/Sink Current Limit Limit Current from V5 None None None Shutdown Disable Part When SHDN <1.3V
= 0.1)
SENSE
= 0.2) to GND
SENSE
2.5V. This insures predictable behavior during start up and shut down. SHDN can be used in conjuction with an external resistor divider to completely disable the part if the input voltage is too low. This can be used to insure adequate voltage to reliably run the converter. See the section in Applications Information.
Table 1 summarizes these features.
C
+ 0.22V Immediately Goes Low Overridden None
REG
IN
Immediately Goes Low Overridden Discharge VC, SS
Immediately Goes Low Overridden None
12
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Reducing EMI from switching power supplies has tradi­tionally invoked fear in designers. Many switchers are designed solely on efficiency and as such produce wave­forms filled with high frequency harmonics that then propagate through the rest of the system.
The LT1683 provides control over two of the more impor­tant variables for controlling EMI with switching inductive loads: switch voltage slew rate and switch current slew rate. The use of this part will reduce noise and EMI over conventional switch mode controllers. Because these variables are under control, a supply built with this part will exhibit far less tendency to create EMI and less chance of encountering problems during production.
It is beyond the scope of this data sheet to get into EMI fundamentals. Application Note 70 contains much infor­mation concerning noise in switching regulators and should be consulted.
Oscillator Frequency
The oscillator determines the switching frequency and therefore the fundamental positioning of all harmonics. The use of good quality external components is important to ensure oscillator frequency stability. The oscillator is of a sawtooth design. A current defined by external resistor RT is used to charge and discharge the capacitor CT . The discharge rate is approximately ten times the charge rate.
By allowing the user to have control over both compo­nents, trimming of oscillator frequency can be more easily achieved.
The external capacitance CT is chosen by:
Nominally RT should be 16.9k. Since it sets up current, its temperature coefficient should be selected to compliment the capacitor. Ideally, both should have low temperature coefficients.
Oscillator frequency is important for noise reduction in two ways. First the lower the oscillator frequency the lower the waveform’s harmonics, making it easier to filter them. Second the oscillator will control the placement of the output voltage harmonics which can aid in specific prob­lems where you might be trying to avoid a certain fre­quency bandwidth.
Oscillator Sync
If a more precise frequency is desired (e.g., to accurately place harmonics) the oscillator can be synchronized to an external clock. Set the RC timing components for an oscillator frequency 10% lower than the desired sync frequency.
Drive the SYNC pin with a square wave (with greater than
1.4V amplitude). The rising edge of the sync square wave will initiate clock discharge. The sync pulse should have a minimum pulse width of 0.5µs.
Be careful in sync’ing to frequencies much different from the part since the internal oscillator charge slope deter­mines slope compensation. It would be possible to get into subharmonic oscillation if the sync doesn’t allow for the charge cycle of the capacitor to initiate slope compensa­tion. In general, this will not be a problem until the sync frequency is greater than 1.5 times the oscillator free-run frequency.
CnF
()
=
T
where f is the desired oscillator frequency in kHz. For R equal to 16.9k, this simplifies to:
CnF
()
=
T
e.g., CT = 1.29nF for f = 100kHz
2180
f kHz R k
()•()
129
f kHz
()
T
T
Slew Rate Setting
The primary reason to use this part is to gain advantage of lower EMI and noise due to slew control. The rolloff in higher frequency harmonics has its theoretical basis with two primary components. First, the clock frequency sets the fundamental positioning of harmonics and second, the associated normal frequency rolloff of harmonics.
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LT1683
C1
MOSFET DRAIN
C2
CAP A OR B
C3
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This part creates a second higher frequency rolloff of harmonics that inversely depends on the slew time, the time that voltage or current spends between the off state and on state. This time is adjustable through the choice of the slew resistors, the external resistors to ground on the R
and R
VSL
the external voltage feedback capacitors CAV, CBV (from CAP A or CAP B to their respective MOSFET drains) and the sense resistor. Lower slew rates (longer slew times, lower frequency for harmonics rolloff) is created with higher values of R resistor
Setting the voltage and current slew rates should be done empirically. The most practical way of determining these components is to set CAV, CBV and the sense resistor value. Then, start by making R resistor pot in series with 3.3k. Starting from the lowest resistor setting (fast slew) adjust the pots until the noise level meets your guidelines. Note that slower slewing waveforms will dissipate more power so that efficiency will drop. You can monitor this as you make your slew adjustment by measuring input and output voltage and their respective currents. Monitor the MOSFET tempera­ture as slew rates are slowed. These components will heat up as efficiency decreases.
pins and the external components used for
CSL
, R
VSL
, CAV, CBV and the current sense
CSL
, R
VSL
each a 50k
CSL
normally set with consideration of the maximum current in the MOSFETs.
Setting the voltage slew also involves selection of the capacitors CAV, CBV. The voltage slew time is proportional to the output voltage swing (basically input voltage), the external voltage feedback capacitor and the R
VSL
value. Thus at higher input voltages smaller capacitors will be used with lower R
values. For a starting point use
VSL
Table␣ 2.
Table 2
INPUT VOLTAGE CAPACITOR VALUE
< 25V 5pF 50V 2.5pF 100V 1pF
Smaller value capacitors can be made in two ways. The first is simply combining two capacitors in series. The equivalent capacitance is then (C1 • C2)/(C1 + C2).
The second method makes use of a capacitor divider. Care should be taken that the voltage ratings of the capacitors satisfy the full voltage swing (2x input voltage for push­pull configurations) thus essentially the same rating as the MOSFETs.
Measuring noise should be done carefully. It is easy to introduce noise by poor measurement techniques. Con­sult AN70 for recommended measurement techniques. Keeping probe ground leads very short is essential.
Usually it will be desirable to keep the voltage and current slew resistors approximately the same. There are circum­stances where a better optimization can be found by adjusting each separately, but as these values are sepa­rated further, a loss of independence of control may occur.
It is possible to use a single slew setting resistor. In this case the R
VSL
and R
pins are tied together. A resistor
CSL
with a value of 1.8k to 34k (one half the individual resis­tors) can then be tied from these pins to ground.
In general only the R
value will be available for adjust-
CSL
ment of current slew. The current slew time does also depend on the current sense resistor but this resistor is
14
Figure 2
The equivalent slew capacitance for Figure 2 is (C1 • C2)/ (C1 + C2 + C3).
Positive Output Voltage Setting
Sensing of a positive output voltage is usually done using a resistor divider from the output to the FB pin. The positive input to the error amp is connected internally to a
1.25V bandgap reference. The FB pin will regulate to this voltage.
Referring to Figure 3, R1 is determined by:
RR
12
V
125
OUT
.
1=−
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The FB bias current represents a small error and can usually be ignored for values of R1||R2 up to 10k.
One word of caution, sometimes a feedback zero is added to the control loop by placing a capacitor across R1. If the feedback capacitively pulls the FB pin above the internal regulator voltage (2.4V), output regulation may be dis­rupted. A series resistance with the feedback pin can eliminate this potential problem. There is an internal clamp on FB that clamps at 0.7V above the regulation voltage that should also help prevent this problem.
R1
FB PIN
R2
Figure 3
Negative Output Voltage Setting
Negative output voltage can be sensed using the NFB pin. In this case regulation will occur when the NFB pin is at –2.5V. The nominal input bias current for the NFB is –25µA (I
), which needs to be accounted for in setting up the
NFB
divider. Referring to Figure 4, R1 is chosen such that:
V
OUT
1683 F03
LT1683 will act to prevent either output from going beyond its set output voltage. The highest output (lightest load) will dominate control of the regulator. This technique would prevent either output from going unregulated high at no load. However, this technique will also compromise output load regulation.
Shutdown
If SHDN is pulled low, the regulator will turn off. As the SHDN pin voltage is increased from ground the internal bandgap regulator will be powered on. This will set a 1.39V threshold for turn on of the internal regulator that runs most of the control circuitry of the regulator. Note after the control circuitry powers on, gate driver activity will depend on the voltage of VIN with respect to the voltage on GCL.
As the SHDN pin enables the internal regulator a 24µA current will be sourced from the pin that can provide hysteresis for undervoltage lockout. This hysteresis can be used to prevent part shutdown due to input voltage sag from an initial high current draw.
In addition to the current hysteresis, there is also approxi­mately 100mV of voltage hysteresis on the SHDN pin.
When the SHDN pin is greater than 2.2V, the hysteretic current from the part will be reduced to essentially zero.
.
25
 
=
RR
12
V
OUT
 
.•
RA
25 2 25
A suggested value for R2 is 2.5k. The NFB pin is normally left open if the FB pin is being used.
R1
NFB PIN
I
NFB
R2
Figure 4
–V
1683 F04
OUT
Dual Polarity Output Voltage Sensing
Certain applications may benefit from sensing both posi­tive and negative output voltages. When doing this each output voltage resistor divider is individually set as previ­ously described. When both FB and NFB pins are used, the
If a resistor divider is used to set the turn on threshold then the resistors are determined by the following equations.
V
ON SHDN
VRA
HYST
RA RB
=
=
+
RB
 
V
V
SHDN
RA RB
+
I
SHDN
RA
V
IN
SHDN
RB
 
Reworking these equations yields:
(• • )
VV VV
RA
HYST SHDN ON SHDN
=
(• )
(• • )
VV VV
HYST SHDN ON SHDN
=
RB
IVV
SHDN ON SHDN
[]
IV
SHDN SHDN
•( )
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So if we wanted to turn on at 20V with 2V of hysteresis:
•. •.
2 1 39 20 0 1
RA
RB
VVVV
=
•. •.
2 1 39 20 0 1
VVVV
=
µ
24 20 1 39
Resistor values could be altered further by adding Zeners in the divider string. A resistor in series with SHDN pin could further change hysteresis without changing turn on voltage.
Frequency Compensation
Loop frequency compensation is accomplished by way of a series RC network on the output of the error amplifier (VC␣ pin).
Referring to Figure 6, the main pole is formed by capacitor CVC and the output impedance of the error amplifier (approximately 400k). The series resistor RVC creates a “zero” which improves loop stability and transient re­sponse. A second capacitor C size of the main compensation capacitor, is sometimes used to reduce the switching frequency ripple on the V pin. VC pin ripple is caused by output voltage ripple attenuated by the output divider and multiplied by the error amplifier. Without the second capacitor, VC pin ripple is:
µ
•.
24 1 39
AV
•( . )
AV V
C
0.01µF
R
VC
2k
VC
Figure 6
VC2
C
4.7nF
, typically one-tenth the
=
=
VC2
.
23 4
.
175
VC PIN
1683 F06
k
k
C
To prevent irregular switching, VC pin ripple should be kept below 50mV
. Worst-case VC pin ripple occurs at
P-P
maximum output load current and will also be increased if poor quality (high ESR) output capacitors are used. The addition of a 0.0047µF capacitor for C
pin reduces
VC2
switching frequency ripple to only a few millivolts. A low value for RVC will also reduce VC pin ripple, but loop phase margin may be inadequate.
Setting Current Limit
The sense resistor sets the value for maximum operating current. When the CS pin voltage is 0.1V the gate drivers will immediately go low (no slew control). Therefore the sense resistor value should be set to RS = 0.1V/I where I I
SW(PEAK)
SW(PEAK)
will depend on the topology and component
is the peak current in the MOSFETs.
SW(PEAK)
,
values and tolerances. Certainly it should be set below the saturation current value for the transformer.
If CS pin voltage is 0.22V in addition to the drivers going low, VC and SS will be discharged to ground. This is to provide additional protection in the event of a short circuit. By discharging VC and SS the MOSFET will not be stressed as hard on subsequent cycles since the current trip will be set lower.
Turn off of the MOSFETs will normally be inhibited for about 100ns at the start of every turn on cycle. This is to prevent noise from interfering with normal operation of the controller. This current sense blanking does not pre­vent the outputs from be turned off in the event of a fault. Slewing of the gate voltage effectively provides additional blanking.
Traces to the SENSE resistor should be kept short and wide to minimize resistance and inductance.
V
CPINRIPPLE
where V
125.• • •
=
= Output ripple (V
RIPPLE
RIPPLE VC
V
OUT
)
P-P
VgmR
gm = Error amplifier transconductance RVC = Series resistor on VC pin V
= DC output voltage
OUT
16
Soft-Start
The soft-start pin is used to provide control of switching current during startup. The max voltage on the VC pin is approximately the voltage on the SS pin. A current source will linearly charge a capacitor on the SS pin. The VC pin voltage will thus ramp also. The approximate time for the voltage on these pins to ramp is (1.31V/9µA) • CSS or approximately 146ms per µF.
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The soft-start current will be initiated as soon as the part turns on. Soft-start will be reinititated after a short-circuit fault.
Thermal Considerations
Most of the IC power dissipation is derived from the V pin. The VIN current depends on a number of factors including: oscillator frequency; loads on V5; slew settings; gate charge current. Additional power is dissipated if V5 sinks current and during the MOSFET gate discharge.
The power dissipation in the IC will be the sum of:
1) The RMS VIN current times V
IN
2) V5 RMS sink current times 5V
3) The gate drive’s RMS discharge current times voltage Because of the strong VIN component it is advantageous
to operate the LT1683 at as low a VIN as possible. It is always recommended that package temperature be
measured in each application. The part has an internal thermal shutdown to minimize the chance of IC destruc­tion but this should not replace careful thermal design.
The thermal shutdown feature does not protect the exter­nal MOSFETs. A separate analysis must be done for those devices to insure that they are operating within safe limits.
Once IC power dissipation, P
, is determined die junc-
DIS
tion temperature is then computed as:
TJ = T
where T thermal resistance. For the 20-pin SSOP, θ
+ P
AMB
is ambient temperature and θ
AMB
DIS
θ
JA
is the package
JA
is 100°C/W.
JA
Magnetics
Design of magnetics is dependent on topology. The fol­lowing details the design of the magnetics for a push-pull converter. In this converter the transformer usually stores little energy. The following equations should be consid­ered as the starting point to building a prototype.
The following definitions will be used: VIN = Input supply voltage RON = Switch-on resistance
IN
ISW = Maximum switch current V
= Desired output voltage
OUT
I
= Output current
OUT
f = Oscillator frequency VF = Forward drop of the rectifier Duty cycle is the major defining equation for this topology.
Note that the output L and C basically filter the chopped voltage so duty cycle controls output voltage. N is the turns ratio of the transformer. The turns ratio must be large enough to ensure that the transformer can put out a voltage equal to the output voltage plus the diode under minimum input conditions. Note the transformer operates at half the oscillator frequency (f).
VV
+
OUT F
−+
()
[]
()
DC
N
=
DC V I R R
2•
()
is the maximum duty cycle of each driver with
MAX
MAX IN MIN SW ON SENSE
respect to the entire cycle, which consists of two periods (A on and B on). So the effective duty cycle is 2 • DC
MAX
. The controller, in general, determines maximum duty cycle. A 44% maximum duty cycle is a guaranteed value for this part.
Remember to add sufficient margin in the turns ratio to account for IR drops in the transformer windings, worst­case diode forward drops and switch on voltage. Also at very slow slew rates the effective DC may be reduced.
There are a number of ways to choose the inductance value for L. We suggest as a starting point that L be selected such that the converter is continuous at I
OUT(MAX)
/4. If your minimum I
is higher than this or
OUT
your components can handle higher peak currents then use a higher number.
D1
1:N
V
IN
L
PRI
D2
R
SENSE
Figure 7. Push-Pull Topology
L
V
OUT
CR
OUT
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Continuous operation occurs when the current in the inductor never goes to zero. Discontinuous operation occurs when the inductor current drops to zero before the start of the next cycle and can occur with small inductors and light loads. There is nothing inherently bad about discontinuous operation, however, converter control and operation are somewhat different. The inductor is smaller for discontinuous operation but the peak currents in the switch, the transformer, the diodes, inductor and capaci­tor will be higher which may produce greater losses.
For continuous operation the inductor ripple current must be less than twice the output current. The worst case for this is at maximum input (lowest duty cycle, DC the following we will evaluate at nominal input since the I
/4 is somewhat arbitrary.
OUT
Note when both inputs are off, the inductor current splits between both secondary outputs and the diode common goes to 0V.
Looking at the inductor current during off time, output ripple current is:
∆=
II
OUT OUT MIN
II
OUT MIN OUT MAX
=
L
2
() ( )
VVDC
OUT MIN F
()
=
+
()
()
/
4
••
12
()
If
OUT
MIN
) but in
With the value of L set, the ripple in the inductor is:
+
VV DC
OUT F
()
∆=
I
L
However, the peak inductor current is evaluated at maxi­mum load and maximum input voltage (minimum DC).
II
LMAX LMAX
The magnetizing ripple current can be shown to be:
∆=
and the peak current in the switch is:
I
SW(PEAK)
This current should be less than the current limit. Worst-case switch ripple is:
I
In the push-pull converter the maximum switch voltage will be 2 • VIN. Because voltage is slew-controlled, the leakage spikes are small. So, the MOSFET should have a maximum rated switch voltage at least 20% higher than 2␣ • VIN.
=+
() ()
+
VV
I
MAG
SW(PEAK)
OUT F
••
NL f
PRI
= N • I
= N • ∆I
••
12
()
Lf
I
LMAX
()
2
+ ∆I
L(MAX)
L(MAX)
MAG
+ ∆I
MAG
The inductance of the transformer primary should be such that L, when reflected into the primary, dominates the input current. In other words, we want the magnetizing current of the transformer small with respect to the current going through the transformer to L. In general, then, the inductance of the primary should be at least five times that of L reflected to the input. This ensures that most of the power will be passed through the transformer to the load. It also increases the power capability of the converter and reduces the peak currents that the switch will see.
L
5
L
PRI
If the magnetizing current is small, say below 100mA, then a smaller L can be used with a higher percentage of the switch current generated by the magnetizing current.
=
2
N
18
So, given the turns ratio, primary inductance and current, the transformer can be designed. The design of the trans­former will require analyzing the power losses of the transformer and making necessary adjustments.
Most transformer companies can assist you with design­ing an optimal solution. For instance Midcom, Inc. (1-800­643-2661). Linear Technology’s application group can also help.
As an example say we are designing a 48V ±20% to 5V 100kHz converter with 2A output and 500mA ripple. Then starting with a guess for the on voltage of the MOSFET plus sense resistor of 0.5V and VF of 0.5V:
+
N =
88 48 80 0 5
505
%• % .
()
.
1
=
61
.
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For continuous operation at I inductor ripple (the same as output ripple):
A
∆= =I
L
The duty cycle for nominal input is:
DC
Then
L
Off-the-shelf components can be used for this inductor. Say we choose a 22µH inductor then ripple current at maximum input (DC = 29.1%) is:
∆=
L
The maximum inductor current is:
2
2
=
NOM
==
+
505 12353
()
505 12291
()
A
1
4
VV
OUT F
NV I R
2
••
2
.
61
.• • .%
1 100
A kHz
+
22 100
()
IN NOM SW ON
()
55
.
•.
47 5
()
.• • .%
()
µ=IF kHz
+
.%
35 3
OUT(MIN)
16
= I
H=
.
103
OUT(MAX)
A
/4,
Peak switch current is:
1
•.=+=
I A mA mA
SW PEAK()
Note that you can discern your magnetizing ripple by looking at the reflected inductance ripple and subtracting it from the switch current ripple.
I
= N • IL – ∆I
MAG
The max ripple current on the switch is:
∆=+=I
SW MAX()
Knowing the peak switch current we can go back and iterate with a more accurate switch on voltage. We would have to know the RON of the FET. In our case our assump­tions of a 0.5V switch on voltage is valid for RON + R
Capacitors
Correct choice of input and output capacitors is very important to low noise switcher performance. Push-pull topologies and other low noise topologies will in general have continuous currents, which reduce the requirements for capacitance. However, noise depends more on the ESR of the capacitors. In addition lower ESR can also improve efficiency.
SENSE
< 1.
2 51 81 494
.
61
SW
A
.
103
.
61
mA A
81 0 25
.
A
.
IA
L MAX()
Primary inductance should be greater than:
L
= 5 • 22µH • 6.12 = 4.1mH
PRI
The secondary inductance would then be:
4.1mH/6.12 = 110µH
The magnetizing ripple current is approximately:
∆= =I
MAG
103
1
•.
4 1 100
.
61
.=+ =2
252
2
55
.
mH kHz
A
mA
81
Input capacitors must also withstand surges that occur during the switching of some types of loads. Some solid tantalum capacitors can fail under these surge conditions.
Design Note 95 offers more information but the following is a brief summary of capacitor types and attributes.
Aluminum Electrolytic:
can be used in this application but in general you will need higher capacitance to achieve low ESR. Additional nonelectrolytic capacitors may be required to achieve better performance.
Specialty Polymer Aluminum:
with their series CD capacitors. While they are only avail­able for voltages below 16V, they have very low ESR and good surge capability.
Low cost and higher voltage. They
Panasonic has come out
1683f
19
LT1683
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APPLICATIO S I FOR ATIO
Solid Tantalum:
the maximum voltage rating is 50V. With large surge currents the capacitor may need to be derated or you need a special type such as AVX TPS line.
OS-CON:
able for 35V or less. Form factor may be a problem.
Ceramic:
voltage bypass. They may resonate with their ESL before ESR becomes dominant. Recent multilayer ceramic (MLC) capacitors provide larger capacitance with low ESR.
There are continuous improvements being made in ca­pacitors so consult with manufacturers as to your specific needs.
Input Capacitors
The input capacitor should have low ESR at high frequen­cies since this will be an important factor concerning how much conducted noise is created.
There are two separate requirements for input capacitors. The first is for supply to the part’s VIN pin. The VIN pin will provide current for the part itself and the gate charge current.
The worst component from an AC point is the gate charge current. The actual peak current depends on gate capaci­tance and slew rate, being higher for larger values of each. The total current can be estimated by gate charge and frequency of operation. Because of the slewing with this part gate charge is spread out over a longer time period than with a normal FET driver. This reduces capacitance requirements.
Typically the current will have spikes of under 100mA located at the gate voltage transitions. This is charge/ discharge to and from the threshold voltage. Most slewing occurs with the gate voltage near threshold.
Since the part’s VIN will typically be under 15V many options are available for choice of capacitor. Values of
Small size and low impedance. Typically
Lower impedance than aluminum but only avail-
Generally used for high frequency and high
input capacitor for just VIN requirement will typically be in the 50µF range with an ESR of under 0.1Ω.
In addition to the part supply, decoupling of the supply to the transformer needs to be considered. If this is the same supply as the VIN pin then that capacitor will need to be increased. However, often with this part the transformer supply will be a higher voltage and as such a separate capacitor.
The transformer decoupling capacitor will see the switch current as ripple.
The above switch current computation can be used to estimate the capacity for these capacitors.
ESR
ESR
DC
DC
MIN
f
MIN
f
C
=
IN
where V ESR is the equivalent series resistance for the cap. In general allowed sag will be a few tenths of volts.
Output Filter Capacitor
The output capacitor is chosen both for capacity and ESR. The capacity must supply the load current in the switch off state. While slew control reduces higher frequency com­ponents of the ripple current in the capacitor, the capacitor ESR and the magnitude of the output ripple current controls the fundamental component. ESR should also be low to reduce capacitor dissipation.
The capacitance value can be computed by consideration of desired load ripple, duty cycle and ESR.
C
OUT
CAP
=
1
V
CAP
I
()
SW MAX
is the allowed sag on the input capacitor.
1
V
OUT
I
()
LMAX
20
1683f
LT1683
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APPLICATIO S I FOR ATIO
MOSFET Selection
There is a wide variety of MOSFETs to choose from for this part. The part will work with either normal threshold (3V to 4V) or logic level threshold devices (1V to 2V).
Select a voltage rating to insure under worst-case condi­tions that the MOSFET will not break down. Next choose an R
sufficiently low to meet both the power dissipation
ON
capabilities of the MOSFET package as well as overall efficiency needs of the converter.
The LT1683 can handle a large range of gate charges. However at very large charge stability may be affected.
The power dissipation in the MOSFET depends on several factors. The primary element is I2R heating when the device is on. In addition, power is dissipated when the device is slewing. An estimate for power dissipation is:
  
PV
=
IN
2
I
+
• I
SR
 
2
fIR DC
•••
+
ON
2
I
4
22
−+
VR I
IN ON
+
3
2
 
V
SR
4
2
I
  
Setting GCL Voltage
Setting the voltage on the GCL pin depends on what type of MOSFET is used and the desired gate drive undervolt­age lockout voltage.
First determine the maximum gate drive that you require. Typically you will want it to be at least 2V greater than the maximum threshold. Higher voltages will lower the on resistance and increase efficiency. Be certain to check the maximum allowed gate voltage. Often this is 20V but for some logic threshold MOSFETs it is only 8V to 10V.
V
needs to be set approximately 0.2V above the desired
GCL
max gate threshold. In addition VIN needs to be at least
1.6V above the gate voltage. The GCL pin can be tied to VIN which will result in a
maximum gate voltage of V
– 1.6V.
IN
This pin also controls undervoltage lockout of the gate drives. The undervoltage lockout will prevent the MOSFETs from switching until there is sufficient drive present.
If GCL is tied to a voltage source or Zener less than 6.8V, the gate drivers will not turn on until VIN exceeds the GCL voltage by 0.8V. For V
above 6.5V, the gate drives are
GCL
insured to be off for VIN < 7.3V and they will be turned on by V
GCL
+ 0.8V.
where I is the average current, I is the ripple current in the switch, ISR is the current slew rate, VSR is the voltage slew rate, f is the oscillator frequency, DC is the duty cycle and RON is the MOSFET on-resistance.
If GCL is tied to VIN, the gate drivers are always on (undervoltage lockout is disabled).
Approximately 50µA of current can be sourced from this pin if VIN > V
+ 0.8V. This could be used to bias a Zener.
GCL
The GCL pin has an internal 19V Zener to ground that will provide a failsafe for maximum gate voltage.
As an example say we are using a Siliconix Si4480DY which has R
rated at 6V. To get 6V, V
DS(ON)
needs to be
GCL
set to 6.2V and VIN needs to be at least 7.6V.
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21
LT1683
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APPLICATIO S I FOR ATIO
Gate Driver Considerations
In general, the MOSFETs should be positioned as close to the part as possible to minimize inductance.
When the part is active the gate drives will be pulled low to less than 0.2V. When the part is off, the gate drives contain a 40k resistor in series with a diode to ground that will offer passive holdoff protection. If you are using some logic level MOSFETs this might not be sufficient. A resistor may be placed from gate to ground, however the value should be reasonably high to minimize DC losses and possible AC issues.
The gate drive source current comes from VIN. The sink current exits through PGND. In general the decoupling cap should be placed close to these two pins.
Switching Diodes
In general, switching diodes should be Schottky diodes. Size and breakdown voltage depend on the specific con­verter. A lower forward drop will improve converter effi­ciency. No other special requirements are needed.
PCB Layout Considerations
As with any switcher careful consideration should be given to PC board layout. Because this part reduces high fre­quency EMI the board layout is less critical, however high currents and voltages still produce the need for careful board layout to eliminate poor and erratic performance.
Basic Considerations
Keep the high current loops physically small in area. The main loops are shown in Figure 8: the power switch loops (A and B) and the rectifier loop (C and D). These loops can be kept small by physically keeping the components close to one another. In addition, connection traces should be kept wide to lower resistance and inductances. Compo­nents should be placed to minimize connecting paths. Careful attention to ground connections must also be maintained. Without getting into elaborate detail be care­ful that currents from different high current loops do not
get coupled into the ground paths of other loops. Using singular points of connection for the grounds is the best way to do this. The two major points of connection are the bottom of the input decoupling cap and the bottom of the output decoupling cap. Typically the sense resistor device PGND and device GND will tie to the bottom of the input cap.
There are two other loops to pay attention to. The current slew involves a high bandwidth control that goes through the MOSFET switch, the sense resistor and into the CS pin of the part and out the GATE pin to the MOSFET. Trace inductance and resistance should be kept low on the GATE drive trace. The CS trace should have low inductance. The sense resistor should be physically close to PGND and the MOSFETs’ sources.
Finally care should be taken with the CAP A, CAP B pins. The part will tolerate stray capacitance to ground on these pins (<5pF) however stray capacitance to the respective drains should be minimized. This path would provide an alternate capacitive path for the voltage slew.
More Help
AN70 contains information about low noise switchers and measurement of noise and should be consulted. AN19 and AN29 also have general knowledge concerning switching regulators. Also, our Application Department is always ready to lend a helping hand.
A
B
C
A
IN
GATE A GATE B
CS
Figure 8
3
1
2
D
C
4
1683 F08
C
OUT
22
1683f
TYPICAL APPLICATIO
LT1683
U
Ultralow Noise 48V to ±12V DC/DC Converter
10k
D2
D3
12V
23.2k
976
1200pF
25k
25k
D1
C3
10µF
25V
16.9k
3.3k
3.3k
510
0.5W
FZT853
2N3904
17
V
IN
14 2
SHDN
5
V5
6
SYNC
7
C
T
8
R
T
16
R
VSL
15
R
12
10nF
CSL
V
C
SS
1k
22nF0.22µF
LT1683
GND
1113
C4 22µF 50V
3
GCL
CAP A
GATE A
CAP B
GATE B
PGND
NFB
10
8.2V
CS
FB
1
18
19
4
20
9
5pF
5pF
Si9422
48V
47µF 100V
MBR01100
Si9422
5pF 200V
25pF
CTX0215542
T1
1
6 2
3,4
5
5pF 200V
25pF
0.068
1683 TA03
L1
10µH
33µF
16V, ×2
16V, ×2
L2
10µH
C1
33µF
12V/1A
C2
–12V/1A
10.0k
2.74k
8.66k
C1, C2:SANYO 16TPC33 C3: MURATA GRM235Y5V106Z C4: NIPPON THCR60EIE226Z D1, D2, D3 IN4148
1k
D4, D5, D6, D7 MBRS1100 L1, L2: COOPER DS50224 T1: COOPER CTX02-15542
8,9
D4
D5
D6
D7
7
10
PACKAGE DESCRIPTIO
5.20 – 5.38** (.205 – .212)
° – 8°
0
.13 – .22
(.005 – .009)
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE *
DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED .152mm (.006") PER SIDE
**
DIMENSIONS DO NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED .254mm (.010") PER SIDE
.55 – .95
(.022 – .037)
MILLIMETERS
(INCHES)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen­tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
U
G Package
20-Lead Plastic SSOP (5.3mm)
(Reference LTC DWG # 05-08-1640)
.65
(.0256)
BSC
.25 – .38
(.010 – .015)
1.73 – 1.99
(.068 – .078)
.05 – .21
(.002 – .008)
G20 SSOP 0501
7.07 – 7.33* (.278 – .289)
1718 14 13 12 1115161920
7.65 – 7.90
(.301 – .311)
12345678910
1683f
23
LT1683
TYPICAL APPLICATIO
U
Ultralow Noise 24V to 5V DC/DC Converter
11V
6.9k
1.5nF
25k
2N3904
68µF 20V
14 2
SHDN
5
V5
6
SYNC
7
C
16.9k
3.3k
3.3k25k
1k
1nF15nF
8
16
15
12
10nF
T
R
T
R
VSL
R
CSL
V
C
SS
17
V
IN
LT1683
GND
1113
39µF
3
GCL
CAP A
GATE A
CAP B
GATE B
PGND
NFB
10
8.2V
CS
FB
1
18
19
4
20
9
IRF540
24V
3pF
10pF
IRF540
COILTRONICS
VP5-1200
7
6–10
3
11
2–12
1
3pF
10pF
10m
MBR2045CT
9
4 8
5
MBR2045CT
4.7µH
330µF
2×330µF
POSCAP
7.50k
2.49k
OPTIONAL
1µH
5V/5A
1683 TA02
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1533 Ultralow Noise 1A Switching Regulator Push-Pull Design for Low Noise Isolated Supplies LT1534 Ultralow Noise 2A Switching Regulator Ultralow Noise Regulator for Boost Topologies LT1738 Ultralow Noise DC/DC Controller High Current Output Ultralow Noise Boost Regulator;
Drives External MOSFET LT1777 Low Noise Step-Down Switching Regulator Programmable dI/dt; Internally Limited dV/dt LT1425 Isolated Flyback Switching Regulator Excellent Regulation without Transformer “Third Winding” LT1576 1.5A, 200kHz Step-Down Switching Regulator Constant Frequency, 1.21V Reference Voltage LT176X Family Low Dropout, Low Noise Linear Regulator 150mA to 3A, SOT-23 to TO-220 LTC1922-1 Synchronous Phase Modulated Full-Bridge Controller Adaptive DirectSenseTM Zero Voltage Switching, 50W to
Kilowatts, Synchronous Rectification DirectSense is a trademark of Linear Technology Corporation.
1683f
LT/TP 0402 2K • PRINTED IN USA
24
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2001
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