Linear Technology LT1167 Datasheet

FEATURES

■

Single Gain Set Resistor: G = 1 to 10,000

■

Gain Error: G = 10, 0.08% Max

■

Gain Nonlinearity: G = 10, 10ppm Max

■

Input Offset Voltage: G = 10, 60µV Max

■

Input Offset Voltage Drift: 0.3µV/°C Max

■

Input Bias Current: 350pA Max

■

PSRR at G = 1: 105dB Min

■

CMRR at G = 1: 90dB Min

■

Supply Current: 1.3mA Max

■

Wide Supply Range: ±2.3V to ±18V

■

1kHz Voltage Noise: 7.5nV/√Hz

■

0.1Hz to 10Hz Noise: 0.28µV

■

Available in 8-Pin PDIP and SO Packages

■

Meets IEC 1000-4-2 Level 4 ESD Tests with

P-P

Two External 5k Resistors

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APPLICATIONS

■

Bridge Amplifiers

■

Strain Gauge Amplifiers

■

Thermocouple Amplifiers

■

Differential to Single-Ended Converters

■

Medical Instrumentation

LT1167

Single Resistor Gain

Programmable, Precision

Instrumentation Amplifier

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DESCRIPTION

The LT®1167 is a low power, precision instrumentation
amplifier that requires only one external resistor to set gains
of 1 to 10,000. The low voltage noise of 7.5nV/√Hz (at 1kHz)
is not compromised by low power dissipation (0.9mA typical
for ±2.3V to ±15V supplies).

The high accuracy of 10ppm maximum nonlinearity and

0.08% max gain error (G = 10) is not degraded even for load
resistors as low as 2k (previous monolithic instrumentation
amps used 10k for their nonlinearity specifications). The
LT1167 is laser trimmed for very low input offset voltage
(40µV max), drift (0.3µ V/°C), high CMRR (90dB, G = 1) and
PSRR (105dB, G = 1). Low input bias currents of 350pA max
are achieved with the use of superbeta processing. The
output can handle capacitive loads up to 1000pF in any gain
configuration while the inputs are ESD protected up to 13kV
(human body). The LT1167 with two external 5k resistors
passes the IEC 1000-4-2 level 4 specification.

The LT1167, offered in 8-pin PDIP and SO packages, requires
significantly less PC board area than discrete multi op amp
and resistor designs. These advantages make the LT1167 the
most cost effective solution for precision instrumentation
amplifier applications.

, LTC and LT are registered trademarks of Linear Technology Corporation.

TYPICAL APPLICATION

Single Supply Barometer

V

S

LT1634CCZ-1.25

392k

R5

3

8

+

2

R8

100k

–

1/2

LT1490

5

6

4

+

LT1490

–

50k

50k

1

2

R4

R3

1

R6
1k

1/2

LUCAS NOVA SENOR

NPC-1220-015-A-3L

4

5k

5k

2

6

R

SET

5

7

R7

50k

U

1

–

5k

5k

+

R1
825Ω

R2
12Ω

3

0.2% ACCURACY AT 25°C

1.2% ACCURACY AT 0°C TO 60°C

= 8V TO 30V

V

S

Gain Nonlinearity

V

S

–

2
1

8
3

7

5

VOLTS

2.800

3.000

3.200

6

INCHES Hg

TO
4-DIGIT
DVM

28.00

30.00

32.00

1167 TA01

NONLINEARITY (100ppm/DIV)

G = 1000
R

= 1k

L

V

OUT

OUTPUT VOLTAGE (2V/DIV)

= ±10V

1167 TA02

LT1167

G = 60

+

4

1

LT1167

1
2
3
4

8
7
6
5



TOP VIEW

R

G


–IN
+IN

–V

S

RG
+V

S


OUTPUT
REF

N8 PACKAGE
8-LEAD PDIP

S8 PACKAGE

8-LEAD PLASTIC SO

+

–

WW

W

U

ABSOLUTE MAXIMUM RATINGS

(Note 1)

Supply Voltage ...................................................... ±20V

Differential Input Voltage (Within the

Supply Voltage) ..................................................... ±40V

Input Voltage (Equal to Supply Voltage) ................ ±20V

Input Current (Note 3) ........................................ ±20mA

Output Short-Circuit Duration ..........................Indefinite

Operating Temperature Range ................ – 40°C to 85°C

Specified Temperature Range

LT1167AC/LT1167C (Note 4) .................. 0°C to 70°C

LT1167AI/LT1167I ............................. –40°C to 85°C

Storage Temperature Range ................. –65°C to 150°C

Lead Temperature (Soldering, 10 sec).................. 300°C

U

W

PACKAGE/ORDER INFORMATION

ORDER PART

NUMBER

LT1167ACN8
LT1167ACS8
LT1167AIN8
LT1167AIS8
LT1167CN8
LT1167CS8
LT1167IN8
LT1167IS8

T

= 150°C, θJA = 130°C/ W (N8)

JMAX

= 150°C, θJA = 190°C/ W (S8)

T

JMAX

Consult factory for Military grade parts.

S8 PART MARKING

1167A
1167AI

1167
1167I

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ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS (Note 7) MIN TYP MAX MIN TYP MAX UNITS

G Gain Range G = 1 + (49.4k/RG) 1 10k 1 10k

Gain Error G = 1 0.008 0.02 0.015 0.03 %

G = 10 (Note 2) 0.010 0.08 0.020 0.10 %
G = 100 (Note 2) 0.025 0.08 0.030 0.10 %
G = 1000 (Note 2) 0.040 0.10 0.040 0.10 %

Gain Nonlinearity (Note 5) VO = ±10V, G = 1 1 6 1.5 10 ppm

= ±10V, G = 10 and 100 2 10 3 15 ppm

V

O

VO = ±10V, G = 1000 15 40 20 60 ppm
VO = ±10V, G = 1, RL = 600 5 12 6 15 ppm

VO = ±10V, G = 10 and 100, 6 15 7 20 ppm

= 600

R

L

= ±10V, G = 1000, 20 65 25 80 ppm

V

O

= 600

R

L

V

OST

V

OSI

V

OSO

I

OS

I

B

e

n

Total RTI Noise = √e
e

ni

e

no

2

Total Input Referred Offset Voltage V
Input Offset Voltage G = 1000, VS = ±5V to ±15V 15 40 20 60 µV
Output Offset Voltage G = 1, VS = ±5V to ±15V 40 200 50 300 µV
Input Offset Current 90 320 100 450 pA
Input Bias Current 50 350 80 500 pA
Input Noise Voltage, RTI 0.1Hz to 10Hz, G = 1 2.00 2.00 µV

2

+ (eno/G)

ni

Input Noise Voltage Density, RTI fO = 1kHz 7.5 12 7.5 12 nV/√Hz
Output Noise Voltage Density, RTI fO = 1kHz (Note 3) 67 90 67 90 nV/√Hz

2

= V

OST

OSI

0.1Hz to 10Hz, G = 10 0.50 0.50 µV

0.1Hz to 10Hz, G = 100 and 1000 0.28 0.28 µV

VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted.

LT1167C/LT1167I

+ V

OSO

LT1167AC/LT1167AI

/G

P-P
P-P
P-P

LT1167

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS (Note 7) MIN TYP MAX MIN TYP MAX UNITS

i

n

R

IN

C

IN(DIFF)

C

IN(CM)

V

CM

CMRR Common Mode 1k Source Imbalance,

PSRR Power Supply VS = ±2.3 to ±18V

I

S

V

OUT

I

OUT

BW Bandwidth G = 1 1000 1000 kHz

SR Slew Rate G = 1, V

R

REFIN

I

REFIN

V

REF

A

VREF

Input Noise Current fO = 0.1Hz to 10Hz 10 10 pA
Input Noise Current Density fO = 10Hz 124 124 fA/√Hz
Input Resistance VIN = ±10V 200 1000 200 1000 GΩ
Differential Input Capacitance fO = 100kHz 1.6 1.6 pF
Common Mode Input fO = 100kHz 1.6 1.6 pF

Capacitance
Input Voltage Range G = 1, Other Input Grounded

= ±2.3V to ±5V –VS + 1.9 +VS – 1.2 – VS + 1.9 +VS – 1.2 V

V

S

= ±5V to ±18V –VS + 1.9 +VS – 1.4 – VS + 1.9 +VS – 1.4 V

V

S

Rejection Ratio V

Rejection Ratio G = 1 105 120 100 120 dB

Supply Current VS = ±2.3V to ±18V 0.9 1.3 0.9 1.3 mA
Output Voltage Swing RL = 10k

Output Current 20 27 20 27 mA

Settling Time to 0.01% 10V Step

Reference Input Resistance 20 20 kΩ
Reference Input Current V
Reference Voltage Range –VS + 1.6 +VS – 1.6 – VS + 1.6 +VS – 1.6 V
Reference Gain to Output 1 ± 0.0001 1 ± 0.0001

= 0V to ±10V

CM

G = 1 90 95 85 95 dB
G = 10 106 115 100 115 dB
G = 100 120 125 110 125 dB
G = 1000 126 140 120 140 dB

G = 10 125 135 120 135 dB
G = 100 131 140 126 140 dB
G = 1000 135 150 130 150 dB

= ±2.3V to ±5V –VS + 1.1 +VS – 1.2 – VS + 1.1 +VS – 1.2 V

V

S

= ±5V to ±18V –VS + 1.2 +VS – 1.3 – VS + 1.2 +VS – 1.3 V

V

S

G = 10 800 800 kHz
G = 100 120 120 kHz
G = 1000 12 12 kHz

= ±10V 0.75 1.2 0.75 1.2 V/µs

OUT

G = 1 to 100 14 14 µs
G = 1000 130 130 µs

= 0V 50 50 µA

REF

VS = ±15V, VCM = 0V, TA = 25°C, RL = 2k, unless otherwise noted.

LT1167AC/LT1167AI LT1167C/LT1167I

P-P

3

LT1167

ELECTRICAL CHARACTERISTICS

VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C, RL = 2k, unless otherwise noted.

LT1167AC LT1167C

SYMBOL PARAMETER CONDITIONS (Note 7) MIN TYP MAX MIN TYP MAX UNITS

Gain Error G = 1 ● 0.01 0.03 0.012 0.04 %

● 0.08 0.30 0.100 0.33 %

● 0.09 0.30 0.120 0.33 %

● 0.14 0.33 0.140 0.35 %

Gain Nonlinearity V

G = 10 (Note 2)
G = 100 (Note 2)
G = 1000 (Note 2)

= ±10V, G = 1 ● 1.5 10 2 15 ppm

OUT

V

= ±10V, G = 10 and 100 ● 3 15 4 20 ppm

OUT

= ±10V, G = 1000 ● 20 60 25 80 ppm

V

OUT

G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 20 50 ppm/°C
V

OST

Total Input Referred V

OST

= V

OSI

+ V

OSO

/G

Offset Voltage
V
V
V
V
V
V
I

OS

OSI

OSIH

OSO

OSOH

OSI

OSO

Input Offset Voltage VS = ±5V to ±15V ● 18 60 23 80 µV

Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 µV

Output Offset Voltage VS = ±5V to ±15V ● 60 380 70 500 µV

Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 µV

/T Input Offset Drift (RTI) (Note 3) ● 0.05 0.3 0.06 0.4 µV/°C

/T Output Offset Drift (Note 3) ● 0.7 3 0.8 4 µV/°C

Input Offset Current ● 100 400 120 550 pA
IOS/T Input Offset Current Drift ● 0.3 0.4 pA /°C
I

B

Input Bias Current ● 75 450 105 600 pA
IB/T Input Bias Current Drift ● 0.4 0.4 pA/°C
V

CM

Input Voltage Range G = 1, Other Input Grounded

VS = ±2.3V to ±5V ● –VS+2.1 + VS–1.3 –VS+2.1 + VS–1.3 V

= ±5V to ±18V ● –VS+2.1 + VS–1.4 –VS+2.1 + VS–1.4 V

V

S

CMRR Common Mode 1k Source Imbalance,

Rejection Ratio V

= 0V to ±10V

CM

G = 1
G = 10
G = 100

● 88 92 83 92 dB

● 100 110 97 110 dB

● 115 120 113 120 dB

G = 1000 ● 117 135 114 135 dB

PSRR Power Supply Rejection Ratio VS = ±2.3V to ±18V

G = 1
G = 10
G = 100

G = 1000
I
V

I

S

OUT

OUT

Supply Current VS = ±2.3V to ±18V ● 1.0 1.5 1.0 1.5 mA
Output Voltage Swing RL = 10k

= ±2.3V to ±5V ● –VS+1.4 + VS–1.3 –VS+1.4 +VS–1.3 V

V

S

= ±5V to ±18V ● –VS+1.6 + VS–1.5 –VS+1.6 + VS–1.5 V

V

S

Output Current ● 16 21 16 21 mA

SR Slew Rate G = 1, V
V

REF

REF Voltage Range (Note 3) ● –VS+1.6 + VS–1.6 –VS+1.6 + VS–1.6 V

= ±10V ● 0.65 1.1 0.65 1.1 V/µs

OUT

● 103 115 98 115 dB

● 123 130 118 130 dB

● 127 135 124 135 dB

● 129 145 126 145 dB

4

ELECTRICAL CHARACTERISTICS

VS = ±15V, VCM = 0V, –40°C ≤ TA ≤ 85°C, RL = 2k, unless otherwise noted. (Note 4)

LT1167

SYMBOL PARAMETER CONDITIONS (Note 7) MIN TYP MAX MIN TYP MAX UNITS

LT1167AI LT1167I

Gain Error G = 1 ● 0.014 0.04 0.015 0.05 %

G = 10 (Note 2) ● 0.130 0.40 0.140 0.42 %
G = 100 (Note 2)

● 0.140 0.40 0.150 0.42 %

G = 1000 (Note 2) ● 0.160 0.40 0.180 0.45 %

G

N

Gain Nonlinearity (Notes 2, 4) VO = ±10V, G = 1 ● 2 15 3 20 ppm

= ±10V, G = 10 and 100 ● 5 20 6 30 ppm

V

O

VO = ±10V, G = 1000 ● 26 70 30 100 ppm

G/T Gain vs Temperature G < 1000 (Note 2) ● 20 50 20 50 ppm/°C
V

V
V
V
V
V
V
I

OS

OST

OSI
OSIH
OSO
OSOH
OSI
OSO

Total Input Referred V
Offset Voltage

OST

= V

OSI

+ V

OSO

/G

Input Offset Voltage ● 20 75 25 100 µV
Input Offset Voltage Hysteresis (Notes 3, 6) 3.0 3.0 µV
Output Offset Voltage ● 180 500 200 600 µV
Output Offset Voltage Hysteresis (Notes 3, 6) 30 30 µV

/T Input Offset Drift (RTI) (Note 3) ● 0.05 0.3 0.06 0.4 µV/°C

/T Output Offset Drift (Note 3) ● 0.8 5 1 6 µV/°C

Input Offset Current ● 110 550 120 700 pA

IOS/T Input Offset Current Drift ● 0.3 0.3 pA/°C
I

B

Input Bias Current ● 180 600 220 800 pA

IB/T Input Bias Current Drift ● 0.5 0.6 pA/°C
V

CM

Input Voltage Range VS = ±2.3V to ±5V ● –VS + 2.1 +VS – 1.3 – VS + 2.1 +VS – 1.3 V

= ±5V to ±18V ● –VS + 2.1 +VS – 1.4 – VS + 2.1 +VS – 1.4 V

V

S

CMRR Common Mode Rejection Ratio 1k Source Imbalance,

VCM = 0V to ±10V

G = 1
G = 10

● 86 90 81 90 dB

● 98 105 95 105 dB

G = 100 ● 114 118 112 118 dB
G = 1000

● 116 133 112 133 dB

PSRR Power Supply Rejection Ratio VS = ±2.3V to ±18V

G = 1 ● 100 112 95 112 dB
G = 10

● 120 125 115 125 dB

G = 100 ● 125 132 120 132 dB

G = 1000
I
V

I

S

OUT

OUT

Supply Current ● 1.1 1.6 1.1 1.6 mA
Output Voltage Swing VS = ±2.3V to ±5V ● –VS + 1.4 +VS – 1.3 – VS + 1.4 +VS – 1.3 V

VS = ±5V to ±18V ● –VS + 1.6 +VS – 1.5 – VS + 1.6 +VS – 1.5 V

Output Current ● 15 20 15 20 mA

SR Slew Rate G = 1, V
V

REF

REF Voltage Range (Note 3) ● –VS + 1.6 +VS – 1.6 – VS + 1.6 +VS – 1.6 V

= ±10V ● 0.55 0.95 0.55 0.95 V/µs

OUT

● 128 140 125 140 dB

The ● denotes specifications that apply over the full specified
temperature range.

Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.

Note 2: Does not include the effect of the external gain resistor R

.

G

Note 3: This parameter is not 100% tested.
Note 4: The LT1167AC/LT1167C are designed, characterized and expected

to meet the industrial temperature limits, but are not tested at –40°C and
85°C. I-grade parts are guaranteed.

Note 5: This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The

magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.

Note 6: Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25°C, but
the IC is cycled to 85°C I-grade (or 70°C C-grade) or –40°C I-grade
(0°C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.

Note 7: Typical parameters are defined as the 60% of the yield parameter
distribution.

5

LT1167

TEMPERATURE (°C)

–50

GAIN ERROR (%)

–0.20

–0.10

–0.05

0

50

0.20

1167 G06

–0.15

0

–25

75

G = 1

25 100

0.05

0.10

0.15

VS = ±15V
V

OUT

= ±10V

R

L

= 2k
*DOES NOT INCLUDE
 TEMPERATURE EFFECTS
 OF R

G

G = 10*

G = 1000*

G = 100*

UW

TYPICAL PERFOR A CE CHARACTERISTICS

Gain Nonlinearity, G = 1

NONLINEARITY (1ppm/DIV)

G = 1
R
V

OUTPUT VOLTAGE (2V/DIV)

= 2k

L

= ±10V

OUT

Gain Nonlinearity, G = 1000

NONLINEARITY (100ppm/DIV)

G = 1000
RL = 2k
V

OUTPUT VOLTAGE (2V/DIV)

= ±10V

OUT

1167 G01

1167 G04

Gain Nonlinearity, G = 10

NONLINEARITY (10ppm/DIV)

G = 10
RL = 2k
V

OUTPUT VOLTAGE (2V/DIV)

= ±10V

OUT

Gain Nonlinearity vs Temperature

80

VS = ±15V

= –10V TO 10V

V

OUT

70

= 2k

R

L

60

50

40

30

NONLINEARITY (ppm)

20

10

0

–25 0 50

–50

G = 1000

G = 100

25

TEMPERATURE (°C)

G = 1, 10

75 100 150

1167 G02

1167 G05

Gain Nonlinearity, G = 100

NONLINEARITY (10ppm/DIV)

G = 100
RL = 2k
V

OUTPUT VOLTAGE (2V/DIV)

= ±10V

OUT

Gain Error vs Temperature

1167 G03

6

Distribution of Input
Offset Voltage, TA = –40°C

40

VS = ±15V
G = 1000

35

30

25

20

15

PERCENT OF UNITS (%)

10

5

0

–80

–60 –40 –20 20 40 60

INPUT OFFSET VOLTAGE (µV)

137 N8 (2 LOTS)
165 S8 (3 LOTS)
302 TOTAL PARTS

0

1167 G40

Distribution of Input
Offset Voltage, TA = 25°C

30

VS = ±15V
G = 1000

25

20

15

10

PERCENT OF UNITS (%)

5

0

–60 – 40 –20 0 20 40 60

INPUT OFFSET VOLTAGE (µV)

137 N8 (2 LOTS)
165 S8 (3 LOTS)
302 TOTAL PARTS

1167 G41

Distribution of Input
Offset Voltage, TA = 85°C

40

VS = ±15V
G = 1000

35

30

25

20

15

PERCENT OF UNITS (%)

10

5

0

–80

–60 –40 –20 20 40 60

INPUT OFFSET VOLTAGE (µV)

137 N8 (2 LOTS)
165 S8 (3 LOTS)
302 TOTAL PARTS

0

1167 G42