LINEAR TECHNOLOGY LS840, LS841, LS842 Technical data

Linear Integrated Systems

FEATURES

LOW NOISE e
LOW LEAKAGE I
LOW DRIFT |∆V
LOW OFFSET VOLTAGE IV

n

G

= 8nV/√Hz TYP.

= 10pA TYP.

/∆T|= 5µV/°C max.

GS1-2

I= 2mV TYP.

GS1-2

LS840 LS841 LS842

LOW NOISE LOW DRIFT

LOW CAPACITANCE

MONOLITHIC DUAL

N-CHANNEL JFET

ABSOLUTE MAXIMUM RATINGS

NOTE 1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature -65° to +150°C

D1

Operating Junction Temperature +150°C

Maximum Voltage and Current for Each Transistor NOTE 1

-V

-V

-I

GSS
DSO

G(f)

Gate Voltage to Drain or Source 60V
Drain to Source Voltage 60V
Gate Forward Current 50mA

Maximum Power Dissipation

G1

S2

31 X 32 MILS

Device Dissipation @ Free Air - Total 400mW @ +125°C

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS CONDITIONS

|∆V

/∆T| max. Drift vs. Temperature 5 10 40 µV/°C VDG= 20V ID= 200µA

GS1-2

TA= -55°C to +125°C

|V

| max. Offset Voltage 5 10 25 mV VDG= 20V ID= 200µA

GS1-2

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS

BV

BV

GSS
GGO

Breakdown Voltage 60 -- -- V VDS= 0 ID= 1nA
Gate-to-Gate Breakdown 60 -- -- V IG= 1nA ID= 0 IS= 0

TRANSCONDUCTANCE

Y
Y
|Y

fss
fs

fs1-2/Yfs

| Mismatch -- 0.6 3 %

Full Conduction 1000 4000 µmho VDG= 20V VGS= 0 f= 1kHz
Typical Conduction 500 1000 µmho VDG= 20V ID= 200µA

DRAIN CURRENT

I

DSS

|I

DSS1-2/IDSS

| Mismatch at Full Conduction -- 1 5 %

Full Conduction 0.5 2 5 mA VDG= 20V VGS= 0

GATE VOLTAGE

V

GS

V

GS

(off) or V

Pinchoff Voltage 1 2 4.5 V VDS= 20V ID= 1nA

P

Operating Range 0.5 -- 4 V VDS= 20V ID= 200µA

GATE CURRENT

-I

-I

-I

-I

G
G
G
GSS

Operating -- 10 50 pA VDG= 20V ID= 200µA
High Temperature -- -- 50 nA VDG= 20V ID= 200µATA= +125°C
Reduced VDG -- 5 -- pA VDG= 10V ID= 200µA
At Full Conduction -- -- 100 pA VDG= 20V VDS= 0

G1 S2

35

S1

2 6

D1 D2

G2

1 7

S1 G2

D2

BOTTOM VIEW

Linear Integrated Systems

4042 Clipper Court, Fremont, CA 94538 • TEL: [phone] • FAX: [phone]

SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS

OUTPUT CONDUCTANCE

Y

OSS

Y

OS

|Y

| Differential -- 0.01 0.1 µmho

OS1-2

Full Conduction -- -- 10 µmho VDG= 20V VGS= 0
Operating -- 0.1 1 µmho VDG= 20V ID= 200µA

COMMON MODE REJECTION

CMR -20 log |∆V
CMR -- 75 -- dB ∆V

/∆VDS| -- 100 -- dB ∆VDS= 10 to 20V ID= 200µA

GS1-2

= 5 to 10V ID= 200µA

DS

NOISE

NF Figure -- -- 0.5 dB V

= 20V VGS= 0 RG= 10MΩ

DS

f= 100Hz NBW= 6Hz

e

n

Voltage -- -- 10 nV/√Hz VDS= 20V ID= 200µA f= 1KHz

NBW= 1Hz

e

n

Voltage -- -- 15 nV/√Hz VDS= 20V ID= 200µA f= 10Hz

NBW= 1Hz

CAPACITANCE

C
C
C

ISS
RSS
DD

Input -- 4 10 pF VDS= 20V ID= 200µA
Reverse Transfer -- 1.2 5 pF
Drain-to-Drain -- 0.1 -- pF VDG= 20V ID= 200µA

0.195

0.175

6 LEADS

0.019

0.016

45°

0.046

0.036

TO-71

Six Lead

DIA.

0.030
MAX.

DIA.

0.100

TO-78

(8.13)

0.320

0.230

DIA.

0.209

0.150

0.115

0.500 MIN.

0.050

3

2

4

5

1

8

6

7

0.048

0.028

0.016

0.019
DIM. A

0.016

0.021
DIM. B

45°

0.029

0.045

0.305

0.335

1

0.028

0.034

0.200

3

2
8

7

0.335

0.370

4

5

6

MAX.

0.040

MIN. 0.500

SEATING

PLANE

0.100

0.100

0.165

0.185

(10.29)

0.290

0.405
MAX.

0.188

0.197

(7.37)

S1 1
D1

SS

G1 S2

0.150

0.158

(4.78)
(5.00)

P-DIP

G2

8

2

3

SS

7
6

D2

45

SOIC

(3.81)
(4.01)

S1 1

2

D1

3

SS

45

G1

0.228

0.244

(5.79)
(6.20)

8

G2
SS

7

6

D2

S2

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.

Linear Integrated Systems

4042 Clipper Court, Fremont, CA 94538 • TEL: [phone] • FAX: [phone]