FEATURES
■
Guaranteed
■
Guaranteed
■
0.1Hz to 10Hz Noise, 60nV
■
Guaranteed
■
Guaranteed
■
Guaranteed
■
Guaranteed
■
Guaranteed
■
Guaranteed
4.5nV/√Hz 10Hz Noise
3.8nV/√Hz 1kHz Noise
Typical
P-P
7 Million Min Voltage Gain, RL = 2k
3 Million Min Voltage Gain, RL = 600Ω
25µV Max Offset Voltage
0.6µV/°C Max Drift with Temperature
11V/µs Min Slew Rate (LT1037)
117dB Min CMRR
U
APPLICATIO S
■
Low Noise Signal Processing
■
Microvolt Accuracy Threshold Detection
■
Strain Gauge Amplifiers
■
Direct Coupled Audio Gain Stages
■
Sine Wave Generators
■
Tape Head Preamplifiers
■
Microphone Preamplifiers
LT1007/LT1037
Low Noise, High Speed
Precision Operational Amplifiers
U
DESCRIPTIO
The LT®1007/LT1037 series features the lowest noise
performance available to date for monolithic operational
amplifiers: 2.5nV/√Hz wideband noise (less than the noise of
a 400Ω resistor), 1/f corner frequency of 2Hz and 60nV peakto-peak 0.1Hz to 10Hz noise. Low noise is combined with
outstanding precision and speed specifications: 10µV offset
voltage, 0.2µV/°C drift, 130dB common mode and power
supply rejection, and 60MHz gain bandwidth product on the
decompensated LT1037, which is stable for closed-loop
gains of 5 or greater.
The voltage gain of the LT1007/LT1037 is an extremely high
20 million driving a 2kΩ load and 12 million driving a 600Ω
load to ±10V.
In the design, processing and testing of the device, particular
attention has been paid to the optimization of the entire
distribution of several key parameters. Consequently, the
specifications of even the lowest cost grades (the LT1007C
and the LT1037C) have been spectacularly improved compared to equivalent grades of competing amplifiers.
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
TYPICAL APPLICATIO
Ultrapure 1kHz Sine Wave Generator
430Ω
–
2
#327 LAMP
LT1037
+
3
CR
TOTAL HARMONIC DISTORTION = < 0.0025%
NOISE = < 0.0001%
AMPLITUDE = ±8V
OUTPUT FREQUENCY = 1.000kHz FOR VALUES GIVEN ±0.4%
6
R
OUTPUT
C
1
f =
2πRC
R = 1591.5Ω ±0.1%
C = 0.1µF ±0.1%
1007/37 TA01
The sine wave generator application shown below utilizes the
low noise and low distortion characteristics of the LT1037.
0.1Hz to 10Hz Noise
VOLTAGE NOISE (20nV/DIV)
0246
TIME (SEC)
8
1007/37 TA02
sn100737 100737fbs
10
1
LT1007/LT1037
TOP VIEW
S8 PACKAGE
8-LEAD PLASTIC SO
1
2
3
4
8
7
6
5
V
OS
TRIM
V
OS
TRIM
V
+
OUT
NC
–IN
+IN
V
–
–
+
WW
W
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ...................................................... ±22V
Input Voltage ............................ Equal to Supply Voltage
U
(Note 1)
Lead Temperature (Soldering, 10 sec.)................. 300°C
Operating Temperature Range
Output Short-Circuit Duration.......................... Indefinite
Differential Input Current (Note 9) ..................... ±25mA
Storage Temperature Range ................. –65°C to 150°C
U
W
U
PACKAGE/ORDER INFORMATION
TOP VIEW
TOP VIEW
V
OS
1
TRIM
–IN
2
–
+
3
–
4
N8 PACKAGE
8-LEAD PDIP
= 100°C, θJA = 130°C/ W (N8)
T
+IN
V
JMAX
V
OS
8
TRIM
+
V
7
OUT
6
NC
5
–IN
T
= 150°C, θJA = 150°C/ W, θJC = 45°C/W
JMAX
ORDER PART NUMBER ORDER PART NUMBER ORDER PART NUMBER
LT1007ACN8
LT1007CN8
LT1007IN8
T
= 150°C, θJA = 100°C/ W (J8)
JMAX
LT1007ACJ8
LT1007AMJ8
LT1007CJ8
LT1007MJ8
LT1037ACN8
LT1037CN8
LT1037IN8
J8 PACKAGE
LEAD CERDIP
LT1037ACJ8
LT1037AMJ8
LT1037CJ8
LT1037MJ8
LT1007ACH
LT1007AMH
LT1007CH
LT1007MH
OBSOLETE PACKAGE OBSOLETE PACKAGE
Consider the N8 Package for Alternate Source Consider the N8 or S8 Package for Alternate Source
Consult LTC Marketing for parts specified with wider operating temperature ranges.
VOS TRIM
1
2
3
8
–
+
4
–
V
(CASE)
H PACKAGE
V
OS
TRIM
+IN
8-LEAD TO-5 METAL CAN
LT1007/LT1037AC, C ............................. 0°C to 70°C
LT1007/LT1037I ............................... –40°C to 85°C
LT1007/LT1037AM, M (OBSOLETE) –55°C to 125°C
+
V
7
6
OUT
5
NC
T
= 150°C, θJA = 190°C/W
JMAX
LT1007CS8
LT1007IS8
LT1037CS8
LT1037IS8
S8 PART MARKING
LT1037ACH
LT1037AMH
LT1037CH
1007
1007I
1037
1037I
LT1037MH
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
∆V
OS
∆Time
I
OS
I
B
e
n
i
n
Input Offset Voltage (Note 2) 10 25 20 60 µV
Long Term Input Offset (Notes 3, 4) 0.2 1.0 0.2 1.0 µV/Mo
Voltage Stability
Input Offset Current 7 30 12 50 nA
Input Bias Current ±10 ±35 ±15 ±55 nA
Input Noise Voltage 0.1Hz to 10Hz (Notes 4, 6) 0.06 0.13 0.06 0.13 µV
Input Noise Voltage Density fO = 10Hz (Notes 4, 5) 2.8 4.5 2.8 4.5 nV/√Hz
= 1000Hz (Note 4) 2.5 3.8 2.5 3.8 nV/√Hz
f
O
Input Noise Current Density fO = 10Hz (Notes 4, 7) 1.5 4.0 1.5 4.0 pA/√Hz
fO = 1000Hz (Notes 4, 7) 0.4 0.6 0.4 0.6 pA/√Hz
VS = ±15V, TA = 25°C, unless otherwise noted.
LT1007AC/AM LT1007C/I/M
LT1037AC/AM LT1037C/I/M
sn100737 100737fbs
2
P-P
LT1007/LT1037
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Input Resistance, Common Mode 7 5 GΩ
Input Voltage Range ±11.0 ±12.5 ±11.0 ±12.5 V
CMRR Common Mode Rejection Ratio VCM = ±11V 117 130 110 126 dB
PSRR Power Supply Rejection Ratio VS = ±4V to ±18V 110 130 106 126 dB
A
VOL
V
OUT
SR Slew Rate LT1007 RL ≥ 2k 1.7 2.5 1.7 2.5 V/µs
GBW Gain Bandwidth LT1007 fO = 100kHz (Note 8) 5.0 8.0 5.0 8.0 MHz
Z
O
P
D
Large-Signal Voltage Gain RL ≥ 2k, VO = ±12V 7.0 20.0 5.0 20.0 V/µV
≥ 1k, VO = ±10V 5.0 16.0 3.5 16.0 V/µV
R
L
≥ 600Ω, VO = ±10V 3.0 12.0 2.0 12.0 V/µV
R
L
Maximum Output Voltage Swing RL ≥ 2k ±13.0 ±13.8 ±12.5 ±13.5 V
≥ 600Ω±11.0 ±12.5 ±10.5 ±12.5 V
R
L
LT1037 A
Product LT1037 f
Open-Loop Output Resistance VO = 0V, IO = 0 70 70 Ω
Power Dissipation LT1007 80 120 80 140 mW
LT1037 80 130 85 140 mW
≥ 5 1115 1115 V/µs
VCL
= 10kHz (Note 8) (A
O
VS = ±15V, TA = 25°C, unless otherwise noted.
LT1007AC/AM LT1007C/I/M
LT1037AC/AM LT1037C/I/M
≥ 5) 45 60 45 60 MHz
VCL
The ● denotes the specifications which apply over the temperature range 0°C ≤ TA ≤ 70°C, VS = ±15V, unless otherwise noted.
LT1007AC LT1007C
LT1037AC LT1037C
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR Common Mode Rejection Ratio VCM = ±10.5V ● 114 126 106 120 dB
PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V ● 106 126 102 120 dB
A
VOL
V
OUT
P
D
Input Offset Voltage (Note 2) ● 20 50 35 110 µV
Average Input Offset Drift (Note 10) ● 0.2 0.6 0.3 1.0 µV/°C
Input Offset Current ● 10 40 15 70 nA
Input Bias Current ● ±14 ±45 ±20 ±75 nA
Input Voltage Range ● ±10.5 ±11.8 ±10.5 ±11.8 V
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V ● 4.0 18.0 2.5 18.0 V/µV
≥ 1k, VO = ±10V ● 2.5 14.0 2.0 14.0 V/µV
R
L
Maximum Output Voltage Swing RL ≥ 2k ● ±12.5 ±13.6 ±12.0 ±13.6 V
Power Dissipation ● 90 144 90 160 mW
sn100737 100737fbs
3
LT1007/LT1037
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the temperature range –40°C ≤ TA ≤ 85°C, VS = ±15V, unless otherwise noted.
LT1007I/LT1037I
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR Common Mode Rejection Ratio VCM = ±10.5V ● 105 120 dB
PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V ● 101 120 dB
A
VOL
V
OUT
P
D
The ● denotes the specifications which apply over the temperature range –55°C ≤ TA ≤ 125°C, VS = ±15V, unless otherwise noted.
SYMBOL PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
V
OS
∆V
OS
∆Temp
I
OS
I
B
CMRR Common Mode Rejection Ratio VCM = ±10.3V ● 112 126 104 120 dB
PSRR Power Supply Rejection Ratio VS = ±4.5V to ±18V ● 104 126 100 120 dB
A
VOL
V
OUT
P
D
For MIL-STD components, please refer to LTC 883C data sheet for test
listing and parameters.
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Input Offset Voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power. AM
and AC grades are guaranteed fully warmed up.
Note 3: Long Term Input Offset Voltage Stability refers to the average
trend line of Offset Voltage vs Time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in V
during the first 30 days are typically 2.5µV. Refer to typical performance
curve.
Note 4: This parameter is tested on a sample basis only.
Input Offset Voltage (Note 2) ● 40 125 µV
Average Input Offset Drift (Note 10) ● 0.3 1.0 µV/°C
Input Offset Current ● 20 80 nA
Input Bias Current ● ±25 ±90 nA
Input Voltage Range ● ±10 ±11.7 V
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V ● 2.0 15.0 V/µV
R
≥ 1k, VO = ±10V ● 1.5 12.0 V/µV
L
Maximum Output Voltage Swing RL ≥ 2k ● ±12.0 ±13.6 V
Power Dissipation ● 95 165 mW
LT1007AM/LT1037AM LT1007M/LT1037M
Input Offset Voltage (Note 2) ● 25 60 50 160 µV
Average Input Offset Drift (Note 10) ● 0.2 0.6 0.3 1.0 µV/°C
Input Offset Current ● 15 50 20 85 nA
Input Bias Current ● ±20 ±60 ±35 ±95 nA
Input Voltage Range ● ±10.3 ±11.5 ±10.3 ±11.5 V
Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V ● 3.0 14.0 2.0 14.0 V/µV
R
≥ 1k, VO = ±10V ● 2.0 10.0 1.5 10.0 V/µV
L
Maximum Output Voltage Swing RL ≥ 2k ● ±12.5 ±13.5 ±12.0 ±13.5 V
Power Dissipation ● 100 150 100 170 mW
Note 5: 10Hz noise voltage density is sample tested on every lot. Devices
100% tested at 10Hz are available on request.
Note 6: See the test circuit and frequency response curve for 0.1Hz to
10Hz tester in the Applications Information section.
Note 7: See the test circuit for current noise measurement in the
Applications Information section.
Note 8: This parameter is guaranteed by design and is not tested.
Note 9: The inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise. If differential input
OS
voltage exceeds ±0.7V, the input current should be limited to 25mA.
Note 10: The Average Input Offset Drift performance is within the
specifications unnulled or when nulled with a pot having a range of 8kΩ to
20kΩ.
4
sn100737 100737fbs
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
10Hz Voltage Noise Distribution
140
120
100
VS = ±15V
= 25°C
T
A
497 UNITS MEASURED
FROM SIX RUNS
Voltage Noise vs Frequency
100
VS = ±15V
= 25°C
T
A
30
LT1007/LT1037
0.02Hz to 10Hz RMS Noise. Gain = 50,000
(Measured on HP3582 Spectrum Analyzer)
80
60
NUMBER OF UNITS
40
20
0
0
3
1
VOLTAGE NOISE DENSITY (nV/√Hz)
4
2
7
5
68
0.01Hz to 1Hz Peak-to-Peak Noise
VOLTAGE NOISE (20nV/DIV)
0204060
TIME (SEC)
1007/37 G01
80
10
9
100
1007/37 G04
10
3
1/f CORNER = 2Hz
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
1
0.1 100
1
10 1000
FREQUENCY (Hz)
Total Noise vs Source Resistance
1000
100
TOTAL NOISE DENSITY (nV/√Hz)
R
R
SOURCE RESISTANCE = 2R
10
1
0.1
AT 1kHz
AT 10Hz
RESISTOR
NOISE ONLY
1 10 100
SOURCE RESISTANCE (kΩ)
MAXIMUM
TYPICAL
1007/37 G02
VS = ±15V
= 25°C
T
A
1007/37 G05
MARKER AT 2Hz ( = 1/f CORNER) =
Voltage Noise vs Temperature
5
VS = ±15V
4
AT 10Hz
AT 1kHz
25
0
TEMPERATURE (°C)
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
3
2
1
0
–50
–25
179µV/√Hz
50,000
50
75
= 3.59
1007/37 G03
100
1007/37 G06
nV
√Hz
125
Current Noise vs Frequency
10
3
MAXIMUM
100 1k 10k
FREQUENCY (Hz)
RMS NOISE DENSITY (pA/√Hz)
0.3
0.1
1
10
1/f CORNER = 120Hz
TYPICAL
1007/37 G07
Wideband Voltage Noise
(0.1Hz to Frequency Indicated)
10
1
0.1
RMS VOLTAGE NOISE (µV)
0.01
0.1
1 10 100
BANDWIDTH (kHz)
1007/37 G08
Voltage Noise vs Supply Voltage
5
TA = 25°C
4
AT 10Hz
AT 1kHz
15
10
sn100737 100737fbs
RMS VOLTAGE NOISE DENSITY (nV/√Hz)
3
2
1
0
5
0
SUPPLY VOLTAGE (±V)
20
25
1007/37 G09
5
LT1007/LT1037
TIME AFTER POWER ON (MINUTES)
0
CHANGE IN OFFSET VOLTAGE (µV)
10
8
6
4
2
0
4
1007/37 G15
1
2
3
5
VS = ±15V
T
A
= 25°C
DUAL-IN-LINE PACKAGE
PLASTIC (N8) OR CERDIP (J8)
METAL CAN (H) PACKAGE
SUPPLY VOLTAGE (±V)
0
SUPPLY CURRENT (mA)
20
1007/37 G18
5
10
15
4
3
2
1
0
125°C
25°C
–55°C
–1
0
1
–1
0
1
V
S
= ±15V
T
A
= 25°C
INPUT VOLTAGE (µV)
INPUT VOLTAGE (µV)
–15 –10 –5 0 5 10 15
OUTPUT VOLTAGE (V)
MEASURED ON TEKTRONIX 178 LINEAR IC TESTER
1007/37 G12
RL = 2k
R
L
= 600Ω
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
Voltage Gain vs Frequency
180
160
140
120
100
80
60
VOLTAGE GAIN (dB)
40
20
0
–20
0.01
0.1
LT1007
10
1
FREQUENCY (Hz)
100
10k
1k
Voltage Gain vs Load Resistance
25
VS = ±15V
= 25°C
T
A
20
15
10
5
OPEN-LOOP VOLTAGE GAIN (V/µV)
0
0.1 0.3 3
LOAD RESISTANCE (kΩ)
110
VS = ±15V
T
A
R
L
LT1037
100k
= 25°C
= 2k
10M
1M
1007/37 G10
1007/37 G13
100M
Voltage Gain vs Supply Voltage
25
TA = 25°C
20
15
10
5
OPEN-LOOP VOLTAGE GAIN (V/µV)
0
5
0
SUPPLY VOLTAGE (±V)
15
10
Voltage Gain vs Temperature
25
25
RL = 2k
RL = 1k
RL = 600Ω
50
20
15
10
VS = ±15V
VOLTAGE GAIN (V/µV)
5
0
–50
= ±10V
V
OUT
= ±8V FOR
V
OUT
≥ 100°C AND
T
A
= 600Ω
R
L
–25
0
TEMPERATURE (°C)
RL = 2k
RL = 600Ω
20
75
1007/37 G11
100
1007/37 G14
Voltage Gain, RL = 2k and 600Ω
25
Warm-Up Drift
125
Long Term Stability of Four
Representative Units
10
5
0
–5
OFFSET VOLTAGE CHANGE (µV)
–10
2
0
6
4
TIME (MONTHS)
0.2µV/MONTH
0.2µV/MONTH
TREND LINE
6
8
1007/37 G16
Offset Voltage Drift with Temperature
of Representative Units
50
VS = ±15V
40
30
20
10
0
–10
–20
OFFSET VOLTAGE (µV)
–30
–40
10
–50
–50
LT1007/LT1037
LT1007A/LT1037A
0
–25
TEMPERATURE (°C)
50
25
75
100
1007/37 G17
125
Supply Current vs Supply Voltage
sn100737 100737fbs
W
COMMON MODE INPUT VOLTAGE (V)
–15 –10
INPUT BIAS CURRENT (nA)
–5 50
10
15
1007/37 G21
20
15
10
5
0
–5
–10
–15
–20
DEVICE WITH NEGATIVE
INPUT CURRENT
DEVICE WITH POSITIVE
INPUT CURRENT
VS = ±15V
T
A
= 25°C
RCM = ≈ 7G
20V
3nA
U
TYPICAL PERFORMANCE CHARACTERISTICS
LT1007/LT1037
Common Mode Rejection vs
Frequency
140
120
100
80
60
COMMON MODE REJECTION RATIO (dB)
40
3
10
LT1007
4
10
FREQUENCY (Hz)
LT1037
5
10
Input Bias Current vs
Temperature
50
VS = ±15V
40
30
20
INPUT BIAS CURRENT (nA)
10
0
–25 25 75
–50
LT1007M
LT1037M
LT1007AM
LT1037AM
0
TEMPERATURE (°C)
50
VS = ±15V
= ±10V
V
CM
= 25°C
T
A
6
10
1007/37 G19
100
1007/37 G22
125
Common Mode Limit vs
Temperature
+
V
–1
–2
–3
–4
+4
+3
COMMON MODE LIMIT (V)
+2
REFERRED TO POWER SUPPLY
+1
–
7
10
V
–50
–25
V+ = 3V TO 20V
V– = –3V TO –20V
50
25
0
TEMPERATURE (°C)
100
1007/37 G20
125
75
Input Bias Current Over the
Common Mode Range
Input Offset Current vs
Temperature
60
VS = ±15V
50
40
30
20
INPUT OFFSET CURRENT (nA)
10
LT1007AM
LT1037AM
0
–75
–50 0
LT1007M
LT1037M
TEMPERATURE (°C)
25–25
50 75
100
1007/37 G23
125
Output Swing vs Load Resistance
15
12
POSITIVE
SWING
9
6
OUTPUT SWING (V)
3
0
100 300 3k
NEGATIVE
SWING
1k 10k
LOAD RESISTANCE (Ω)
VS = ±15V
= 25°C
T
A
1007/37 G24
PSRR vs Frequency
160
140
120
100
80
60
40
20
POWER SUPPLY REJECTION RATIO (dB)
0
1
TA = 25°C
10
NEGATIVE
SUPPLY
POSITIVE
SUPPLY
3
2
10
10
10
FREQUENCY (Hz)
4
10
Output Short-Circuit Current
Closed-Loop Output Impedance
100
VS = ±15V
= 25°C
T
A
I
1
10
= 1mA
OUT
AV = 1000
100
AV = 1000
AV = 1
10k
1k
FREQUENCY (Hz)
AV = 5
100k
LT1007
LT1037
1007/37 G26
1M
10
0.1
OUTPUT IMPEDANCE (Ω)
0.01
5
7
6
10
10
10
1195 G25
0.001
8
vs Time
50
40
30
25°C
SOURCINGSINKING
20
10
VS = ±15V
0
–10
–20
–30
SHORT-CIRCUIT CURRENT (mA)
–40
–50
0
TIME FROM OUTPUT SHORT TO GROUND (MINUTES)
1
2
sn100737 100737fbs
–55°C
125°C
125°C
25°C
–55°C
3
1007/37 G27
7
LT1007/LT1037
TEMPERATURE (°C)
–50
SLEW RATE (V/
µ
s) PHASE MARGIN (DEG)
GAIN BANDWIDTH PROCUCT, f
O
= 10kHz (MHz)
70
60
50
20
15
10
70
60
50
0
50
75
1007/37 G30
–25
25
100
125
SLEW
GBW
VS = ±15V
C
L
= 100pF
PHASE MARGIN
W
U
TYPICAL PERFORMANCE CHARACTERISTICS
LT1037 Small-Signal
Transient Response
LT1037 Large-Signal Response
LT1037 Phase Margin, Gain
Bandwidth Product, Slew Rate vs
Temperature
50mV
0V
–50mV
= 5
A
VCL
= ±15V
V
S
= 15pF 1007/37 G28
C
L
LT1037 Gain, Phase Shift
vs Frequency
50
40
30
20
VOLTAGE GAIN (dB)
AV = 5
10
0
0.1
GAIN
1 10 100
FREQUENCY (MHz)
VS = ±15V
T
= 25°C
A
= 100pF
C
L
PHASE
1007/37 G31
10V
0V
–10V
90
100
110
PHASE SHIFT (DEG)
120
130
140
150
160
170
180
190
–10
= 5
A
VCL
= ±15V 1007/37 G29
V
S
LT1007 Gain, Phase Shift
vs Frequency
40
30
20
10
VOLTAGE GAIN (dB)
0
0.1
GAIN
1 10 100
FREQUENCY (MHz)
PHASE
VS = ±15V
= 25°C
T
A
= 100pF
C
L
1007/37 G32
90
100
110
PHASE SHIFT (DEG)
120
130
140
150
160
170
180
190
LT1007 Phase Margin, Gain
Bandwidth Product, Slew Rate vs
Temperature
70
60
50
3
2
SLEW RATE (V/µs) PHASE MARGIN (DEG)
1
–50
–25
PHASE MARGIN
SLEW
0
TEMPERATURE (°C)
25
GBW
50
VS = ±15V
= 100pF
C
L
75
100
1007/37 G33
GAIN BANDWIDTH PROCUCT, f
9
8
O
= 100kHz (MHz)
7
125
LT1007 Small-Signal
Transient Response
50mV
0V
–50mV
= 1
A
VCL
= ±15V
V
S
= 15pF 1007/37 G34
C
L
8
Maximum Undistorted Output
LT1007 Large-Signal Response
5V
0V
–5V
= –1
A
VCL
V
= ±15V 1007/37 G35
S
vs Frequency
28
24
20
16
12
8
4
PEAK-TO-PEAK OUTPUT VOLTAGE (V)
0
1k 100k 1M 10M
10k
FREQUENCY (Hz)
VS = ±15V
T
LT1037LT1007
sn100737 100737fbs
= 25°C
A
1007/37 G36
LT1007/LT1037
1007/37 F04
LT1007
–
+
R
F
OUTPUT
2.8V/µs
U
WUU
APPLICATIONS INFORMATION
General
The LT1007/LT1037 series devices may be inserted
directly into OP-07, OP-27, OP-37 and 5534 sockets with
or without removal of external compensation or nulling
components. In addition, the LT1007/LT1037 may be
fitted to 741 sockets with the removal or modification of
external nulling components.
Offset Voltage Adjustment
The input offset voltage of the LT1007/LT1037 and its drift
with temperature, are permanently trimmed at wafer
testing to a low level. However, if further adjustment of
VOS is necessary, the use of a 10kΩ nulling potentiometer
will not degrade drift with temperature. Trimming to a
value other than zero creates a drift of (VOS/300)µV/°C,
e.g., if VOS is adjusted to 300µV, the change in drift will be
1µV/°C (Figure 1).
The adjustment range with a 10kΩ pot is approximately
±2.5mV. If less adjustment range is needed, the sensitivity
and resolution of the nulling can be improved by using a
smaller pot in conjunction with fixed resistors. The example has an approximate null range of ±200µV
(Figure 2).
Offset Voltage and Drift
Thermocouple effects, caused by temperature gradients
across dissimilar metals at the contacts to the input
terminals, can exceed the inherent drift of the amplifier
unless proper care is exercised. Air currents should be
minimized, package leads should be short, the two input
leads should be close together and maintained at the same
temperature.
The circuit shown to measure offset voltage is also used
as the burn-in configuration for the LT1007/LT1037, with
the supply voltages increased to ±20V (Figure 3).
50k*
15V
–
2
100Ω*
3
50k*
Figure 3. Test Circuit for Offset Voltage and
Offset Voltage Drift with Temperature
LT1007
LT1037
+
7
6
V
1000V
OUT =
4
*RESISTORS MUST HAVE LOW
THERMOELECTRIC POTENTIAL
–15V
V
OUT
OS
1007/37 F03
INPUT
10k
1
–
2
3
LT1007
LT1037
+
8
4
15V
7
6
OUTPUT
Unity-Gain Buffer Application (LT1007 Only)
When RF ≤ 100Ω and the input is driven with a fast, large-
signal pulse (>1V), the output waveform will look as
shown in the pulsed operation diagram (Figure 4).
During the fast feedthrough-like portion of the output, the
–15V
1007/37 F01
input protection diodes effectively short the output to the
input and a current, limited only by the output short-circuit
Figure 1. Standard Adjustment
1k
4.7k
4.7k
1
–
2
3
Figure 2. Improved Sensitivity Adjustment
LT1007
LT1037
+
8
4
–15V
15V
7
6
OUTPUT
1007/37 F02
protection, will be drawn by the signal generator. With
RF ≥ 500Ω, the output is capable of handling the current
requirements (IL ≤ 20mA at 10V) and the amplifier stays
in its active mode and a smooth transition will occur.
Figure 4. Pulsed Operation
sn100737 100737fbs
9
LT1007/LT1037
FREQUENCY (Hz)
100
90
80
70
60
50
40
30
0.01 1 10 100
1007/37F05b
0.1
GAIN (dB)
U
WUU
APPLICATIONS INFORMATION
As with all operational amplifiers when RF > 2k, a pole will
be created with RF and the amplifier’s input capacitance,
creating additional phase shift and reducing the phase
margin. A small capacitor (20pF to 50pF) in parallel with R
will eliminate this problem.
Noise Testing
The 0.1Hz to 10Hz peak-to-peak noise of the LT1007/
LT1037 is measured in the test circuit shown (Figure 5a).
The frequency response of this noise tester (Figure 5b)
indicates that the 0.1Hz corner is defined by only one zero.
The test time to measure 0.1Hz to 10Hz noise should not
exceed ten seconds, as this time limit acts as an additional
zero to eliminate noise contributions from the frequency
band below 0.1Hz.
Measuring the typical 60nV peak-to-peak noise performance of the LT1007/LT1037 requires special test
precautions:
F
electric effects in excess of a few nanovolts, which
would invalidate the measurements.
3. Sudden motion in the vicinity of the device can also
“feedthrough” to increase the observed noise.
A noise voltage density test is recommended when measuring noise on a large number of units. A 10Hz noise
voltage density measurement will correlate well with a
0.1Hz to 10Hz peak-to-peak noise reading since both
results are determined by the white noise and the location
of the 1/f corner frequency.
Current noise is measured in the circuit shown in Figure 6
and calculated by the following formula:
12
/
e
()
no
i
=
n
2
nV
−
130
()
Ω
M
1 101
()()
•
101
2
1. The device should be warmed up for at least five
minutes. As the op amp warms up, its offset voltage
changes typically 3µV due to its chip temperature
increasing 10°C to 20°C from the moment the power
supplies are turned on. In the ten-second measurement
interval these temperature-induced effects can easily
exceed tens of nanovolts.
2. For similar reasons, the device must be well shielded
from air currents to eliminate the possibility of thermo-
0.1µF
100k
10Ω
*DEVICE UNDER TEST
NOTE: ALL CAPACITOR VALUES ARE FOR
NONPOLARIZED CAPACITORS ONLY
–
*
LT1007
LT1037
+
VOLTAGE GAIN
= 50,000
2k
4.7µF
Figure 5a. 0.1Hz to 10Hz Noise Test Circuit
24.3k
+
LT1001
–
4.3k
100k
0.1µF
22µF
2.2µF
110k
100Ω
SCOPE
× 1
R
IN
1007/37 F05a
= 1M
100k
500k
–
LT1007
500k
LT1037
+
1007/37 F06
Figure 6
Figure 5b. 0.1Hz to 10Hz Peak-toPeak Noise Tester Frequency
Response
e
no
sn100737 100737fbs
10
LT1007/LT1037
U
WUU
APPLICATIONS INFORMATION
The LT1007/LT1037 achieve their low noise, in part, by
operating the input stage at 120µA versus the typical 10µA
of most other op amps. Voltage noise is inversely proportional while current noise is directly proportional to the
square root of the input stage current. Therefore, the
LT1007/LT1037’s current noise will be relatively high. At
low frequencies, the low 1/f current noise corner frequency (≈120Hz) minimizes current noise to some extent.
In most practical applications, however, current noise will
not limit system performance. This is illustrated in the
Total Noise vs Source Resistance plot in the Typical
Performance Characteristics section, where:
Total Noise = [(voltage noise)2 + (current noise • RS)2 +
(resistor noise)2]
1/2
U
TYPICAL APPLICATIONS
Three regions can be identified as a function of source
resistance:
(i) RS ≤ 400Ω. Voltage noise dominates
(ii) 400Ω ≤ RS ≤ 50k at 1kHz
400Ω ≤ RS ≤ 8k at 10Hz
(iii) RS > 50k at 1kHz
RS > 8k at 10Hz
Current noise
dominates
}
Resistor noise
dominates
}
Clearly the LT1007/LT1037 should not be used in region
(iii), where total system noise is at least six times higher
than the voltage noise of the op amp, i.e., the low voltage
noise specification is completely wasted.
Gain 1000 Amplifier with 0.01% Accuracy, DC to 5Hz
15k
340k
1%
365Ω
1%
THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT1037 (AND LT1007) IS
USEFUL IN LOW FREQUENCY, HIGH CLOSED-LOOP GAIN AMPLIFIER
APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN-LOOP
GAIN OF ONE MILLION WITH 500kHz BANDWIDTH. AS THE GAIN ERROR
PLOT SHOWS, THIS DEVICE IS CAPABLE OF 0.1% AMPLIFYING ACCURACY
UP TO 0.3Hz ONLY. EVEN INSTRUMENTATION RANGE SIGNALS CAN VARY
AT A FASTER RATE. THE LT1037’S “GAIN PRECISION-BANDWIDTH
PRODUCT” IS 200 TIMES HIGHER AS SHOWN.
–
2
LT1037
+
3
20k
5%
TRIM
15V
7
4
RN60C FILM RESISTORS
–15VINPUT
6
OUTPUT
Gain Error vs Frequency
Closed-Loop Gain = 1000
1
TYPICAL
PRECISION
OP AMP
0.1
GAIN ERROR (%)
0.01
0.001
0.1
LT1007
GAIN ERROR =
CLOSED-LOOP GAIN
OPEN-LOOP GAIN
1 10 100
FREQUENCY (Hz)
LT1037
1007/37 TA03
sn100737 100737fbs
11
LT1007/LT1037
TYPICAL APPLICATIONS
U
Microvolt Comparator with Hysteresis
15V
365Ω
100M
1%
5%
7
3
INPUT
POSITIVE FEEDBACK TO ONE OF THE NULLING TERMINALS
CREATES APPROXIMATELY 5µV OF HYSTERESIS.
OUTPUT CAN SINK 16mA.
INPUT OFFSET VOLTAGE IS TYPICALLY CHANGED LESS
THAN 5µV DUE TO THE FEEDBACK.
+
LT1007
2
–
8
4
–15V
15k
1%
6
OUTPUT
1007/37 TA04
Precision Amplifier Drives 300Ω Load to ±10V
365Ω
1%
THE ADDITION OF THE LT1007 DOUBLES THE AMPLIFIER’S OUTPUT DRIVE
TO ±33mA. GAIN ACCURACY IS 0.02%, SLIGHTLY DEGRADED COMPARED
TO ABOVE BECAUSE OF SELF-HEATING OF THE LT1037 UNDER LOAD.
INPUT
–
2
LT1037
+
3
Infrared Detector Preamplifier
340k
1%
20k
5%
6
10k
TRIM
–
2
15Ω
5%
6
15Ω
5%
OUTPUT
±10V
R
L
300Ω
1007/37 TA05
LT1007
+
3
15V
+
IR RADIATION
OPTICAL
CHOPPER
1k
100µF
+
33Ω
10µF
50mA
10Ω
100µF
+
2N2219A
267Ω*
100µF
+
PHOTOCONDUCTIVE
INFRARED DETECTOR
HgCdTe type
INFRA-RED ASSOCIATES, INC.
13Ω AT 77°K
*1% METAL FILM
392Ω*
CHOPPED DETECTOR
OUTPUT
15V
73
+
LT1007
2
–
–15V
6
4
OUTPUT TO
DEMODULATOR
392k*
SYNCHRONOUS
392Ω*
1007/37 TA08
sn100737 100737fbs
12
U
TYPICAL APPLICATIONS
LT1007/LT1037
Phono Preamplifier
0.01µF
0.033µF
100Ω
100pF
47k
MAG PHONO
INPUT
15V
–
2
LT1037
+
3
–15V
7.87k
7
6
4
ALL RESISTORS METAL FILM
WW
SI PLIFIED SCHE ATIC
1
Q4
Q3
Q7
3.4k
Tape Head Amplifier
0.01µF
4.99k
100k
100Ω
OUTPUT
TAPE HEAD
INPUT
1007/37 TA06
8
3.4k
450µA
750µA
316k
–
2
LT1037
+
3
6
ALL RESISTORS METAL FILM
240µA
OUTPUT
1007/37 TA07
+
V
7
NONINVERTING
INPUT (+)
3
2
INVERTING
INPUT (–)
Q8
–
Q6
V
Q5 Q9
Q10
–
V
Q13
C1 = 110pF FOR LT1007
C1 = 12pF FOR LT1037
Q1A
17k
Q1B
240µA
130pF
Q2B
17k
Q2A
Q11
120µA
Q17
Q12
200Ω
Q15
Q19
1.2k
V
Q22
+
1.2k
6k
Q20
Q16
200Ω
Q18
80pF
V
Q23
750Ω
200Ω
+
6k
C1
20pF
50Ω
Q24
Q25
500µA
Q26
Q27
Q30
Q28
20Ω
OUTPUT
6
20Ω
Q29
–
V
4
1007/37 SD
sn100737 100737fbs
13
LT1007/LT1037
PACKAGE DESCRIPTION
0.040
(1.016)
MAX
SEATING
PLANE
0.010 – 0.045*
(0.254 – 1.143)
U
H Package
8-Lead TO-5 Metal Can (.200 Inch PCD)
(Reference LTC DWG # 05-08-1320)
0.335 – 0.370
(8.509 – 9.398)
DIA
0.305 – 0.335
(7.747 – 8.509)
0.016 – 0.021**
(0.406 – 0.533)
0.050
(1.270)
MAX
GAUGE
PLANE
0.165 – 0.185
(4.191 – 4.699)
0.500 – 0.750
(12.700 – 19.050)
REFERENCE
PLANE
45°TYP
0.027 – 0.034
(0.686 – 0.864)
0.110 – 0.160
(2.794 – 4.064)
INSULATING
STANDOFF
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.300 BSC
(0.762 BSC)
0.027 – 0.045
(0.686 – 1.143)
0.200
(5.080)
TYP
*
LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE
AND 0.045" BELOW THE REFERENCE PLANE
**
FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS
J8 Package
8-Lead CERDIP (Narrow .300 Inch, Hermetic)
(Reference LTC DWG # 05-08-1110)
CORNER LEADS OPTION
(4 PLCS)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.005
(0.127)
MIN
0.025
(0.635)
RAD TYP
87
12
0.405
(10.287)
MAX
0.016 – 0.024
(0.406 – 0.610)
65
3
4
H8(TO-5) 0.200 PCD 0595
0.220 – 0.310
(5.588 – 7.874)
0.200
(5.080)
MAX
14
0.008 – 0.018
(0.203 – 0.457)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
0° – 15°
OBSOLETE PACKAGES
0.045 – 0.065
(1.143 – 1.651)
0.014 – 0.026
(0.360 – 0.660)
0.015 – 0.060
(0.381 – 1.524)
0.100
(2.54)
BSC
0.125
3.175
MIN
J8 1298
sn100737 100737fbs
PACKAGE DESCRIPTION
U
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)
876
0.255 ± 0.015*
(6.477 ± 0.381)
0.400*
(10.160)
MAX
LT1007/LT1037
5
12
0.300 – 0.325
(7.620 – 8.255)
0.065
(1.651)
0.009 – 0.015
(0.229 – 0.381)
+0.035
0.325
–0.015
+0.889
8.255
()
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
TYP
0.045 – 0.065
(1.143 – 1.651)
0.100
(2.54)
BSC
S8 Package
8-Lead Plastic Small Outline (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1610)
3
0.189 – 0.197*
(4.801 – 5.004)
7
8
4
0.130 ± 0.005
(3.302 ± 0.127)
0.125
(3.175)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
5
6
0.020
(0.508)
MIN
N8 1098
0.228 – 0.244
(5.791 – 6.197)
0.010 – 0.020
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
*
DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**
DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
× 45°
(1.346 – 1.752)
0°– 8° TYP
0.016 – 0.050
(0.406 – 1.270)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
0.053 – 0.069
0.014 – 0.019
(0.355 – 0.483)
TYP
0.150 – 0.157**
(3.810 – 3.988)
SO8 1298
1
3
2
4
0.004 – 0.010
(0.101 – 0.254)
0.050
(1.270)
BSC
sn100737 100737fbs
15
LT1007/LT1037
TYPICAL APPLICATIO
5k
2.5V
3
+
2
–
350Ω
BRIDGE
–
2
3
+
LT1007
LT1007
LT1009
U
Strain Gauge Signal Conditioner with Bridge Excitation
7.5V
7
6
4
–7.5V
7.5V
–7.5V
301k*
7
6
*RN60C FILM RESISTOR
THE LT1007 IS CAPABLE OF PROVIDING EXCITATION CURRENT
4
DIRECTLY TO BIAS THE 350Ω BRIDGE AT 5V. WITH ONLY 5V ACROSS
THE BRIDGE (AS OPPOSED TO THE USUAL 10V) TOTAL POWER
DISSIPATION AND BRIDGE WARM-UP DRIFT IS REDUCED. THE BRIDGE
OUTPUT SIGNAL IS HALVED, BUT THE LT1007 CAN AMPLIFY THE
REDUCED SIGNAL ACCURATELY.
ZERO
TRIM
10k
REFERENCE
OUT
15V
73
+
LT1007
2
–
4
–15V
6
1µF
GAIN
TRIM
50k
301k*
499Ω*
OUTPUT
0V TO 10V
1007/37 TA09
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
LT1028 Ultralow Noise Precision Op Amp Lowest Noise 0.85nV/√Hz
LT1115 Ultralow Noise, Low distortion Audio Op Amp 0.002% THD, Max Noise 1.2mV/√Hz
LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Similar to LT1007
LT1126/LT1127 Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps Similar to LT1037
LT1498/LT1499 10MHz, 5V/µs, Dual/Quad Rail-to-Rail Input and Output
Precision C-Load
C-Load is a trademark of Linear Technology Corporation.
Linear Technology Corporation
16
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
TM
Op Amps
●
www.linear.com
LT/CPI 1101 1.5K REV B • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1985
sn100737 100737fbs
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