Page 1
PZTA44
SOT-223 Transistor(NPN)
1. BASE
1
Features
Low current : 300mA(max)
High voltage: V
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 6 V
Collector Current -Continuous 300 mA
Collector Power Dissipation 1000 mW
Junction Temperature 150
Storage Temperature -65-150
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
=400V
CEO
=25 unless otherwise noted℃ )
A
2. COLLECTOR
3. EMITTER
500 V
400 V
℃
℃
SOT-223
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
V
CE(sat)
V
CE(sat)
V
CE(sat)
=100μA,IE=0 500 V
=1mA,IB=0 400 V
=100μA,IC=0 6 V
VCB=400V,IE=0 0.1 μA
VEB=4V,IC=0 0.1 μA
VCE=10V,IC=1mA 40
VCE=10V,IC=10mA 50 200
VCE=10V,IC=50mA 45
VCE=10V,IC=100mA 40
IC=1mA,IB=0.1mA 0.4 V
IC=10mA,IB=1mA 0.5 V
IC=50mA,IB=5mA 0.75 V
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
IC=10mA,IB=1mA 0.85 V
V
BE(sat)
VCE=10V,IC=10mA,f=100MHz 20 MHz
f
T
VCB=20V,IE=0,f=1MHz 7 pF
C
C
VEB=0.5V,IC=0,f=1MHz 180 pF
C
e
Page 2
PZTA44
SOT-223 Transistor(NPN)
Typical characteristics
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