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PZTA14
SOT-223 Transistor(NPN)
1
1. BASE
2. COLLECTOR
3. EMITTER
SOT-223
Features
High current (max. 500 mA)
Low voltage (max. 30 V).
Pre-amplifiers requiring high input impedance.
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 500 mA
Collector Power Dissipation 2 W
Junction Temperature 150
Storage Temperature -65-150
30 V
30 V
10 V
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
base cut-off current
V
(BR)CBO
V
CE(SUS)
V
(BR)EBOIE
I
CBO
I
CEO
h
FE(1)
Ic=100μA,IE=0 30 V
Ic=100uA,IB=0 30 V
=100μA,IC=0 10 V
VCB=30V,IE=0 0.1 μA
VEB=10V,IC=0 0.1 μA
VCE=5.0V,IC=10mA 10000
DC current gain
VCE=5.0V,IC=100mA 20000
h
FE(2)
IC=100mA,IB=0.1mA 1.5 V
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
VCE=5V,Ic=100mA 2 V
V
BE
VCE=5V,IC=10mA,f=100MHz 125 MHz
f
T
Page 2
Typical Characteristics
PZTA14
SOT-223 Transistor(NPN)
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