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PXT8050
SOT-89 Transistor(NPN)
Features
Compliment to PXT8550
1. BASE
2. COLLECTOR
3. EMITTER
1.6
1.4
SOT-89
4.6
4.4
1.8
1.4
B
2.6
4.25
2.4
3.75
MARKING: Y1
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
A
Symbol Parameter Value Units
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous 1.5 A
Collector Power dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55-150
40 V
25 V
6 V
℃
℃
0.44
0.37
Dimensions in inches and (millimeters)
0.8
MIN
B0.13
1.5
0.48
0.35
0.53
0.40
2x)
3.0
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF h
Rank
FE(1)
B C D D3
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
BEF
VCE=10V,IC=50mA,f=30MHz 100 MHz
f
T
C
ob
=100uA, IE=0 40 V
=0.1mA, IB=0 25 V
=100μA, IC=0 5 V
VCB=40V, IE=0 0.1 μA
VCE=20V, IE=0 0.1 μA
VEB=5V, IC=0 0.1 μA
VCE=1V, IC=100mA 85 400
VCE=1V, IC=800mA 40
IC=800mA, IB=80mA 0.5 V
IC=800mA, IB=80mA 1.2 V
VCE=1V, IC=10mA 1 V
IB=1A 1.55 V
VCB=10V,IE=0,f=1MHz 15 pF
Range
85-160 120-200 160-300 300-400
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Typical Characteristics
PXT8050
SOT-89 Transistor(NPN)
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