Page 1
r
V
V
V
V
g
1
Features
Compliment to PXT3904
Low current
Low voltage
MARKING:
MAXIMUM RATINGS (T
Symbol Paramete
CBO
CEO
EBO
IC
PC
TJ
T
st
2A
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -6 V
Collector Current -Continuous -0.2 A
Collector Power Dissipation 0.5 W
Junction Temperature 150
Storage Temperature -55-150
1. BASE
2. COLLECTOR
2
3. EMITTER
3
=25℃ unless otherwise noted)
A
alue Units
PXT3906
SOT-89 Transistor(NPN)
SOT-89
1.6
1.4
0.8
MIN
℃
℃
0.44
0.37
Dimensions in inches and (millimeters)
B0.13
1.5
4.6
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
B
2.6
4.25
2.4
3.75
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
Emitter capacitance
Noise figure
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions MIN TYP MAX UNIT
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)1IC
V
CE(sat)2IC
V
BE(sat)1IC
V
BE(sat)2IC
VCE=-20V,IC=-10mA,f=100MHz 250 MHz
f
T
C
c
Ce V
NF
35 nS
t
d
35 nS
t
r
225 nS
t
S
t
f
=-10μA,IE=0 -40 V
=-1mA,IB=0 -40 V
=-10μA,IC=0 -6 V
VCB=-30V,IE=0 -0.05 μA
VEB=-6V,IC=0 -0.05 μA
VCE=-1V,IC=-0.1mA 60
VCE=-1V,IC=-1mA 80
VCE=-1V,IC=-10mA 100 300
VCE=-1V,IC=-50mA 60
VCE=-1V,IC=-100mA 30
=-10mA,IB=-1mA -0.25 V
=-50mA,IB=-5mA -0.4 V
=-10mA,IB=-1mA -0.65 -0.85 V
=-50mA,IB=-5mA -0.95 V
VCB=-5V,IE=0,f=1MHz 4.5 pF
=-0.5V,IC=0,f=1MHz 10 pF
EB
V
=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
CE
R
=1KΩ
S
I
=-10mA , IB1=-IB2= -1mA
C
4 dB
75 nS
Page 2
PXT3906
SOT-89 Transistor(NPN)
Typical characteristics
Loading...