Page 1
PXT2222A
SOT-89 Transistor(NPN)
BASE
1.
COLLECTOR
1
2
3
Features
MAXIMUM RATINGS (T
Symbol Parameter Value Units
Epitaxial planar die construction
Complementary PNP Type available(PXT2907A)
=25℃ unless otherwise noted)
A
2.
EMITTER
3.
Dimensions in inches and (millimeters)
0.44
0.37
1.6
1.4
SOT-89
0.8
MIN
B0.13
1.5
4.6
4.4
0.48
0.35
1.8
1.4
0.53
0.40
2x)
3.0
B
2.6
4.25
2.4
3.75
V
V
V
IC
PC
TJ
T
CBO
CEO
EBO
stg
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 600 mA
Collector Power Dissipation 0.5 W
Junction Temperature 150 ℃
Storage Temperature -55 +150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
V
V
V
IC= 10μ A,IE=0 75 V
(BR)CBO
IC= 10mA, IB=0 40 V
(BR)CEO
IE=10μA, IC=0 6 V
(BR)EBO
VCB=60V, IE=0 0. 01 μA
I
CBO
VEB= 5V , IC=0 0. 01 μA
I
EBO
h
VCE=10V, IC= 0.1mA 35
FE(1)
h
VCE=10V, IC= 1mA 50
FE(2)
h
VCE=10V, IC= 10mA 75
FE(3)
h
VCE=10V, IC= 150mA 100 300
FE(4)
h
VCE=1V, IC= 150mA 50
FE(5)
h
VCE=10V, IC= 500mA 40
FE(6)
V
IC=500mA, IB= 50mA 1 V
CE(sat)
IC=150mA, IB=15mA 0.3 V
V
CE(sat)
V
IC=500mA, IB=50mA 2.0 V
BE(sat)
V
IC=150mA, IB=5mA 0.6 1.2 V
BE(sat)
VCE=10V, IC=20mA
f
T
C
ob
t
d
t
r
t
S
t
f
f=100MHz
10 nS
225 nS
=10V, IE= 0,f=1MHz
V
CB
VCC=30V, IC=150mA
V
=0.5V,IB1=15mA
BE(off)
VCC=30V, IC=150mA
I
=- IB2= 15mA
B1
300 MHz
8 pF
25 nS
60 nS
Page 2
PXT2222A
SOT-89 Transistor(NPN)
Typical characteristics
Page 3
PXT2222A
SOT-89 Transistor(NPN)
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