LG L705ix Service Manual

Date: February, 2008 / Issue 1.0

Service Manual

Model : L705ix

Service Manual

L705ix

Internal Use Only

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1. INTRODUCTION .............................. 5

1.1 Purpose................................................... 5

1.2 Regulatory Information............................ 5

2. PERFORMANCE...............................7

2.1 System Overview .....................................7

2.2 Usable environment .................................8

2.3 Radio Performance ..................................9

2.4 Current Consumption.............................12

2.5 Antenna BAR .........................................12

2.6 Battery BAR ...........................................13

2.7 Sound Pressure Level............................14

2.8 Charging ................................................14

3. TECHNICAL BRIEF ........................15

3.1 General Description ...............................17

3.2 GSM Mode.............................................19

3.3 LO Phase-locked Loop ..........................20

3.4 Off-chip RF Components .......................22

3.5 ISDB-T (1 Seg Receiver) .......................28

3.6 Digital Baseband(DBB/MSM6280).........29

3.7 Block Diagram (MSM 6280)...................30

3.8 Subsystem(MSM6280) ..........................31

3.9 Power Block ...........................................38

3.10 External memory interface ...................43

3.11 H/W Sub System..................................44

3.12 Main Features ......................................57

4. TROUBLE SHOOTING ...................63

4.1 RF Component.......................................63

4.2 Checking TCXO Block ...........................65

4.3 Checking UMTS Block ...........................67

4.4 1- SEG Tuner.........................................76

4.5 Power ON ..............................................79

4.6 Charger ..................................................82

4.7 USB........................................................85

4.8 SIM Detect .............................................87

4.9 Camera ..................................................89

4.10 Keypad Backlight .................................93

4.11 FOLDER Close / Open ........................94

4.12 Main LCD .............................................95

4.13 Audio....................................................96

4.14 Headset path........................................98

4.15 Speaker phone path...........................100

4.16 Main microphone ...............................102

4.17 Headset microphone..........................104

4.18 Vibrator ..............................................106

5. DOWNLOAD .................................107

5.1 Introduction ..........................................107

5.2 Downloading Procedure.......................107

5.3 Troubleshooting download errors ........121

5.4 Caution.................................................127

6. BLOCK DIAGRAM ........................128

6.1 UMTS and 1seg RF Block diagram .....128

6.2 Interface Diagram ................................130

7. Circuit Diagram ............................133

8. BGM Pin Map................................145

9. PCB LAYOUT................................147

10. Calibration & RF Auto Test

Program (Hot Kimchi)................155

10.1 Configuration of HOT KIMCHI ...........155

10.2 How to use HOT KIMCHI...................156

11. EXPLODED VIEW &

REPLACEMENT PART LIST ..... 159

11.1 EXPLODED VIEW ............................ 159

11.2 Replacement Parts

<Mechanic component>.................... 161

<Main component> ........................... 165

11.3 Accessory ......................................... 185

Table Of Contents

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1.1 Purpose

This manual provides the information necessary to repair, calibration, description and download the features of this model.

1.2 Regulatory Information

A. Security

Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example, persons other than your company’s employees, agents, subcontractors, or person working on your company’s behalf) can result in substantial additional charges for your telecommunications services. System users are responsible for the security of own system. There are may be risks of toll fraud associated with your telecommunications system. System users are responsible for programming and configuring the equipment to prevent unauthorized use. The manufacturer does not warrant that this product is immune from the above case but will prevent unauthorized use of commoncarrier telecommunication service of facilities accessed through or connected to it. The manufacturer will not be responsible for any charges that resultfrom such unauthorized use.

B. Incidence of Harm

If a telephone company determines that the equipment provided to customer is faulty and possibly causing harm or interruption in service to the telephone network, it should disconnect telephone service until repair can be done. A telephone company may temporarily disconnect service as long as repair is not done.

C. Changes in Service

A local telephone company may make changes in its communications facilities or procedure. If these changes could reasonably be expected to affect the use of the phones or compatibility with the net work, the telephone company is required to give advanced written notice to the user, allowing the user to take appropriate steps to maintain telephone service.

D. Maintenance Limitations

Maintenance limitations on the phones must be performed only by the manufacturer or its authorized agent. The user may not make any changes and/or repairs expect as specifically noted in this manual. Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system and may void any remaining warranty.

1. INTRODUCTION

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E. Notice of Radiated Emissions

This model complies with rules regarding radiation and radio frequency emission as defined by local regulatory agencies. In accordance with these agencies, you may be required to provide information such as the following to the end user.

F. Pictures

The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly different.

G. Interference and Attenuation

A phone may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from unsuppressed engines or electric motors may cause problems.

H. Electrostatic Sensitive Devices

ATTENTION

Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign. Following information is ESD handling:

• Service personnel should ground themselves by using a wrist strap when exchange system boards.

• When repairs are made to a system board, they should spread the floor with anti-static mat which is also grounded.

• Use a suitable, grounded soldering iron.

• Keep sensitive parts in these protective packages until these are used.

• When returning system boards or parts like EEPROM to the factory, use the protective package as described.

1. INTRODUCTION

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2. PERFORMANCE

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2.1 System Overview

2. PERFORMANCE

Item Specification

Dimension 99.8 x 50.8 x 15.6mm

Weight 126g under(with standard battery)

Power 860mAh Li-Polymer

Talk Time Over 140 Min(WCDMA Voice, 10 dBm)

Stand-by Time Over 350 hours(WCDMA DRX 2.56s)

Antenna Intennal Antenna

LCD(Main) 2.2" QVGA(320x240 Dot), 262K TFT Color LCD

Back Light Yes

Back Light color White

Camera 2 Mega Pixel(CMOS)

Vibrator Yes

Speaker Yes

C-MIC Yes

Receiver Yes

Earphone Jack Yes/ RC-5240

SIM Socket Yes(SIM Block Type) : 3.0V & 1.8V

Volume Key Push Type(+,-)

Voice Key Push Type

I/O Connect 10 Pin(RC-5238)

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2.2 Usable environment

1) Environment

2) Environment (Accessory)

* CLA : 12~24V(DC).

2. PERFORMANCE

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Item Specification

Voltage 3.7V (Typ) ( Shut Down: 3.20)

Operation Temp -20 ~ +60°C

Storage Temp -30 ~ +85°C

Humidity 85% (Max)

Reference Spec. Min Typ. Max Unit

TA Power Available power 100 220 240 Vac

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2. PERFORMANCE

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2.3 Radio Performance

1) Transmitter-GSM Mode

No Item Specification

1 Maximum Output Power

Class3: +24 dBm (+1/-3dB)

Class4: +21dBm(±2dB)

2 Frequency Error ±0.1ppm↓

3 Open Loop Power control in uplink ±9dB↓ @normal, ±12dB @extreme

Adjust output(TPC command)

cmd 1dB 2dB 3dB

+1 +0.5/1.5 +1/3 +1.5/4

4 Inner Loop Power control in uplink 0 -0.5/+0.5 -0.5/+0.5 -0.5/+0.5

-1 -0.5/-1.5 -1/-3 -1.5/-4

group(10equal command group)

+1 +8/+12 +16/+24

5 Minimum Output Power -50 dBm↓ (3.84MHz)

Qin/Qout:DPCCH quality levels

6Out-of-synchronization handling of output power Toff@ DPCCH/Ior:-22->-28dB

Ton@ DPCCH/Ior:-24->-18dB

7 Transmit OFF Power -56 dBm↓ (3.84M)

8 Transmit ON/OFF Time Mask

±25us

PRACH,CPCH, uplink compressed mode

±25us

9 Change of TFC

power varies according to the data rate

DTX: DPCH off

(minise interference between UE)

10 Power setting in uplink compressed ±3dB↓ (after14slots transmission gap)

11 Occupied Bandwidth(OBW) 5 MHz↓ (99% )

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2. PERFORMANCE

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No Item Specification

-35-15*(∆f-2.5) dBc @∆f=2.5~3.5MHz, 30k

12 Spectrum emission Mask

-35-1*(∆f-3.5) dBc @∆f=3.5~7.5MHz,1M

-39 10*(∆f-7.5) dBc @∆f=7.5~8.5MHz,1M

-49 dBc @∆f=8.5~12.5MHz,1M

13 Adjacent Channel Leakage Ratio(ACLR)

33dB↑ @5MHz, ACP>-50dBm

43dB↑ @10MHz, ACP>-50dBm

-36 dBm @f=9~150KHz, 1k BW

WCDMA -36 dBm @f=150KHz~30MHz, 10k

2100, 800 -36 dBm @f=30~1000MHz, 100k

-30 dBm @f=1~12.75GHz, 1M

-41 dBm* @1893.5~1919.6MHz, 300k

Spurious Emission

WCDMA -67 dBm* @925~935MHz, 100k

(*: additional requirement)

2100 -79 dBm* @935~960MHz, 100k

-71 dBm* @1805~1880MHz, 100k

WCDMA

-60 dBm* @869~894MHz, 3.84M

800

-60 dBm* @1930~1990MHz, 3.84M

-60 dBm* @2110~2155MHz, 3.84M

15 Transmit Intermodulation

-31 dBc @5MHz,Interferer -40dBc

-41 dBc @10MHz,Interferer -40dBc

16 Error Vector Magnitude(EVM)

17.5 %↓ (>-20dBm)

(@12.2k, 1DPDCH+1DPCCH)

17 Peak code domain error

-15 dB↓ @SF=4, 768kbps, multi-code

transmission

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2. PERFORMANCE

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2)Receiver- WCDMA Mode

No Item Specification

1 Reference Sensivitivity Level -106.7dBm↓ (3.84M)

-25 dBm↑ (3.84 MHz)

2Maximum Input Level -44dBm/3.84MHz(DPCH_Ec)

UE@+20dBm output power(class3)

3 Adjacent Channel Selectivity(ACS)

33dB↑

UE@+20dBm output power(class3)

-56 dBm/3.84MHz @10MHz

4In-band Blocking

UE@+20dBm output power(class3)

-44 dBm/3.84MHz @15MHz

UE@+20dBm output power(class3)

-44 dBm/3.84MHz @f=2050~2095 &

2185~2230 MHz, band a)

UE@ =20dBm output power(class3)

-30 dBm/3.84MHz @f=2025~2050 &

5 Out-band Blocking 2230~2255 MHz, band a)

UE@+20dBm output power(class3)

-15 dBm/3.84MHz @f=1~2025 &

2255~12500 MHz, band a)

UE@+20dBm output power(class3)

6Spurious Response

-44dBm CW

UE@+20dBm output power(class3)

-46 dBm CW@10MHz &

7Intermodulation Characteristic -46dBm/3.84MHz @20MHz

UE@+20dBm output power(class3)

WCDMA -57 dBm @f=9KHz~1GHz, 100k BW

2100, 800 -47 dBm @f=1~12.75GHz, 1M

8 Spurious Emissions

WCDMA -60 dBm @f=1920~1980MHz, 3.84MHz

2100 -60 dBm @f=2110~2170MHz, 3.84MHz

WCDMA -60 dBm @f=824~849MHz, 3.84MHz

800 -60 dBm @f=869~894MHz, 3.84MHz

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2. PERFORMANCE

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2.4 Current Consumption

(Stand by and Voice Call Test Condition: LCD backlight Off) (VT Test Condition: Speaker off, LCD backlight On)

2.5 Antenna BAR

Static Stand-by Voice Call VT

WCDMA

350 Hours (2.4mA) 150 Mins (320mA) 90 Mins (550mA)

(DRX=2.56) (Tx=10dBm) (Tx=10dBm)

Antenna Bar WCDMA

BAR 3

RSCP>= -105 dBm

and Ec/Io >= -12 dBm

BAR 2

-110 <= RSCP < -105 dBm

or -14 <= Ec/Io < -12 dBm

BAR 1

-113 <= RSCP < -110 dBm

or -17 <= Ec/Io < -14 dBm

BAR 0

RSCP < -113 dBm

or Ec/Io < -17 dBm

Network Notification

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2.6 Battery BAR

2. PERFORMANCE

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Indication Voltage

During Idle state During Call state

BAR 3 -> 2

3.75 3.70

(call maintenance over 40min)

BAR 2 -> 1

3.63 3.58

(call maintenance over 10min)

BAR 1 -> 0

3.25 3.25

(Icon Blinking)

Low battery message BAR 1 -> 0

Low battery pop-up BAR 2 -> 1, display one time

Power OFF during call - 80s after Low battery message

Power OFF at stand-by 60s after Low battery message -

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2. PERFORMANCE

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2.7 Sound Pressure Level

2.8 Charging

• Charging Method: CC & CV (Constant Current and Constant Voltage

• Maximum Charging Voltage: 4.2 V

• Normal Charging Current: 600 mA

• Normal Battery Capacity: 860 mAh

• Charging Time: Max 3 hours (except for trickle charging time)

• Full charging indication current (charging icon stop current): 140 mA

• Cut-off voltage:

Stand-by: 3.25 V Talk: 3.25 V low temperature (under -10deg.): 3.00V

No Test Item Specification

1 Sending Loudness Rating (SLR)

NOM

8±3dB

MAX

2Sending Frequency Response (SFR) MAX MASK IN

3 Receiving Loudness Rating (RLR)

NOM -2±3dB

MAX -10±3dB

4Receiving Frequency Response (RFR) MAX MASK IN

5Side Tone Masking Rating (STMR)

NOM

17dB

MAX

6 Echo Loss (EL)

NOM

46dB

MAX

7 Idle Noise-Sending (INS)

NOM

-64dBm0p

MAX

8 Idle Noise-Receiving (INR)

NOM Under -57dBPA

MAX Under -54dBPA

9 Sending Loudness Rating (SLR)

NOM

8±3dB

MAX

10 Receiving Loudness Rating (RLR)

NOM -1±3dB

MAX -12±3dB

11 Side Tone Masking Rating (STMR)

NOM

25dB

MAX

12 Echo Loss (EL)

NOM

40dB

MAX

13 Idle Noise-Sending (INS)

NOM

Under -55dBm0p

MAX

14 Idle Noise-Receiving (INR)

NOM Under -45dBPA

MAX Under -40dBPA

Headset

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3. TECHNICAL BRIEF

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3.1 General Description

The L705iX supports UMTS-800, UMTS-2100. All receivers and the UMTS transmitter use the radioOne1Zero-IF architecture to eliminate intermediate frequencies, directly converting signals between RF and baseband.

A generic, high-level functional block diagram of L705iX is shown in Figure 3.1-1. One antenna collects base station forward link signals and radiates handset reverse link signals. The antenna connects with receive and transmit paths through a Diplexer. The UMTS receive paths each include an LNA, an RF band-pass filter, and a downconverter

QUALCOMM’s branded chipset that implements a Zero-IF radio architecture.

3. TECHNICAL BRIEF

Fig 3.1 Block diagram of RF part

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that translate the signal directly from RF-to-baseband using radioOne ZIF techniques. The high-band UMTS receive path and low-band path are accommodated in the RTR6275 IC. The RFIC.s Rx analog baseband outputs, for the receive chains, connect to the MSM IC.

For the transmit chains, the RTR6275 IC directly translates the Tx baseband signals (from theMSM device) to an RF signal using an internal LO generated by integrated on-chip PLL and VCO. The RTR6275 IC outputs deliver fairly high-level RF signals that are first filtered by Tx SAWs and then amplified by their respective UMTS PAs. The high- and low-band UMTS RF transmit signals emerge from the RTR6275 transceiver.

ISDB-T 1seg receive path include an LNA, Mixer, IF Part and OFDM demodulator which are accommodated in ENT34606 IC.

L705iX power supply voltages are managed and regulated by the PM6650 Power Management IC.

This versatile device integrates all wireless handset power management, general housekeeping, and user interface support functions into a single mixed signal IC. It monitors and controls the external power source and coordinates battery recharging while maintaining the handset supply voltages using low dropout, programmable regulators.

The device’s general housekeeping functions include an ADC and analog multiplexer circuit for monitoring on-chip voltage sources, charging status, and current flow, as well as user-defined off-chip variables such as temperature, RF output power, and battery ID. Various oscillator, clock, and counter circuits support IC and higher-level handset functions. Key parameters such as under-voltage lockout and crystal oscillator signal presence are monitored to protect against detrimental conditions.

3. TECHNICAL BRIEF

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3. TECHNICAL BRIEF

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3.2 UMTS Mode

3.2.1 Receiver

The UMTS duplexer receiver outputs are routed to LNA circuits within the RFR6275 and RTR6275 device.

UMTS LNA circuits(one for low-band UMTS and one for high-band UMTS path) are separated from all other receive functions contained within the RFR6275 and RTR6275 receiver ICs to improve mixer LO to RF isolation- a critical parameter in the ZIF architecture. Isolation is further improved using highreverse isolation circuits in the LNA designs.

The LNA gains are stepped via API control. The IC operating mode and LNA bias currents are automatically adjusted via software to minimize DC power consumption.

WCDWCDMA_800_RA_800_RX

Figure 3.2-1 RFR6275 IC functional block diagram

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The inputs use differential configurations to improve second-order intermodulation and common-mode rejection performance. The differential input gain stage implements MSM ICcontrolled gain adjustments to extend receiver dynamic range.

The outputs of the differential amplifiers drive the RF port of the quadrature RF-to-baseband downconverters. The down-converters are routed to low-pass filters (one I and one Q) whose pass-band and stop-band characteristics supplement MSM device processing. These filter circuits allow for DC offset correction and the differential I/Q outputs are buffered to interface with the MSM IC.

Numerous secondary functions also are integrated on-chip: the Rx LO generation and distribution circuits and various interface, control, and status circuits. An on-chip UMTS VCO is phase locked to the external VC-TCXO signal and processed, by the LO generation and distribution circuits, to create the UMTS Rx LO signals for the quadrature down-converter. The LO signal, applied to its mixer, is at frequencies different to that of the VCO, which is an important consideration for ZIF processing. The QUALCOMM MSM device provides status and control signaling, employing power reduction features (such as selective circuit power-down, gain control, and bias control) to extend handset standby time.

3. TECHNICAL BRIEF

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Figure 3.2-2 RTR6275 IC functional block diagram

WCDMA_800_RX

WCDWCDMA_2100_RXA_2100_RX

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3. TECHNICAL BRIEF

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3.2.2 Transmitter

The UMTS Tx path begins with differential baseband signals (I and Q) from the MSM device. These analog input signals are amplified, filtered, and applied to the quadrature up-converter mixers. The upconverter output is amplified by multiple variable gain stages that provide transmit AGC control. The AGC output is filtered and applied to the driver amplifier; this output stage includes an integrated matching inductor that simplifies the external matching network to a single series capacitor to achieve the desired 50-Ω interface.

The RTR6275 UMTS output is routed to its power amplifier through a bandpass filter, and delivers fairly high-level signals that are filtered and applied to the PA. Transmit power is delivered from the duplexer to the antenna through the switch module. The transceiver LO synthesizer is contained within the RTR6275 IC with the exception of the off-chip loop filter components and the VC-TCXO. This provides a simplified design for multimode applications. The PLL circuits include a reference divider, phase detector, charge pump, feedback divider, and digital logic generator.

UMTS Tx. Using only PLL1, the LO generation and distribution circuits create the necessary LO signals for nine different frequency converters. the UMTS transmitter also employs the ZIF architecture to translate the signal directly from baseband to RF. This requires FLO to equal FRF, and the RTR6275 IC design achieves this without allowing FVCO to equal FRF. The RTR6275 IC is able to support UMTS 2100/1900 and UMTS 800 mode transmitting. This design guideline shows only UMTS 2100/1900 and UMTS 800 applications.

WCDWCDMA_2100_TXA_2100_TX

WCD

WCDMA_800_TA_800_TX

Fig.3.2-3 RTR6275 IC functional block diagram

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3.3 LO Phase-locked Loop

All LO functions are fully integrated on-chip and do not require user any adjustment. QUALCOMM has established and implemented frequency plans and LO generation schemes that support the radioOne Platform B-series chipset. Only one area requires handset designer attention: the loop filters relating to each PLL. These are addressed in this chapter. All the UMTS Rx, GSM Rx, and GPS PLL circuits are included within the RFICs: reference dividers, phase detectors, charge pumps, feedback dividers, and digital logic. There are four integrated VCOs and PLLs within the Platform B (RFCMOS) chipset as shown in Figure 3.3-1 and Figure 3.3-2

■ Figure 3.3-1

1. PLL1, within the RTR6275 IC, produces the LO for up- and down-conversion of GSM Tx/Rx, band

UMTS Tx.

2. PLL2, within RTR6275 IC, produces the Rx LO for one of the (high band) UMTS receive Paths..

■ Figure 3.3-2

3. PLL3, within the RFR6275 IC, produces the Rx LO for the remaining UMTS receive paths.

4. PLL4, within the RFR6275 IC, produces the Rx LO for the GPS receive path.

Within the RFICs, a buffered 19.2 MHz TCXO signal provides the synthesizer input (REF), the frequency reference to which the PLL is phase- and frequency-locked. The reference is divided by the R-Counters to create a fixed frequency input to the phase detector, FR. The other phase detector input (FV) varies as the loop acquires lock, and is generated by dividing the VCO frequency using the feedback path N-Counter. The closed loop will force FV to equal FR when locked. If the loop is not locked, the error between FV and FR will create an error signal at the output of the charge pump. This error signal is filtered by the loop filter components and applied to the VCO, tuning the output frequency so that the error is decreased. Ultimately, the loop forces the error to approach zero and the PLL is phase- and frequency-locked.

3. TECHNICAL BRIEF

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Fig.3.3-1 RTR6275 / Figure 3.3-2 RFR6275 PLL’ s functional block diagram

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3. TECHNICAL BRIEF

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3.3.1 UMTS Rx PLL (PLL2)

QUALCOMM provides a baseline PLL2 design for UMTS Rx. Loop filter component reference designators are shown in Figure 3.3-1.

Notes: 1. The performance values listed in this table are based on simulation results and are provided

as a starting point for handset designers. Synthesizer performance is stillbeing evaluated and optimized during this document release. Loop parameter, settling time, and filter component values are all expected to change when the optimization effort is completed. Future revisions will include expected performance based on measured data.

2. For L705iX, C1_2.2nF C2_150pF R1_10k

3. Loop parameter acronyms are: Kvco VCO tuning sensitivity CP_I Charge pump current (controlled by API software) PM Phase margin L_BW Loop bandwidth

4. The listed VCO tuning sensitivity is based on QUALCOMM internal Rx VCO.

5. The listed settling times are for switching between channels at opposite ends of the active band and settling to within 250 Hz of the final frequency.

6. Test and evaluation efforts were ongoing at the time of this document release.

Check future versions for design recommendations based on our test results.

3.3.2 Transceiver PLL (PLL1)

The PLL1 within the RTR6275 IC creates the Rx LO for all the GSM receive bands and GSM transmit bands as well as the UMTS transmit bands. The PLL1 of RTR6275 IC (with on-chip VCO) creates the transceiver LO that supports the quad-band GSM receivers and the GSM transmitters as well as the tri-band UMTS transmit outputs. All LO functional blocks are integrated into the RTR6275 IC except for some loop filter capacitors (Figure 3.3-1). On- chip circuits include reference divider, phase detector, charge pump, VCO, feedback divider, and digital logic status. The off-chip loop filter capacitors allow minimal optimization of PLL performance characteristics (stability, transitory response, settling time, and phase noise) for different applications.

Table 3.3-1 Baseline PLL2 design for UMTS Rx

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3.4 Off-chip RF Components

3.4.1 UMTS diplexer;

(FL108 : LFD21878MDP1B807)

A UMTS diplexer is a passive device that implements frequency domain multiplexing. The diplexer consists of a lowpass filter and high pass filter. So, the signals can coexist on one output port without interfering with each other.

Insertion loss : High Band (UMTS2100): 0.55dB

Low Band (UMTS800): 0.45dB

3.4.2 UMTS duplexer; (FL103: SAYZY1G95EA0B00, FL106: SAYZW836MAF0F00)

A UMTS duplexer splits a single operating band into receive and transmit paths. Important performance requirements include;

■ Insertion loss : This component is also in the receive and transmit paths; In the L705iX typical losses : UMTS2100_ Tx = 1.5dB, UMTS2100_ Rx = 1.8dB and UMTS800_ Tx =1.5dB, UMTS800_ Rx = 2.4dB

■ Out-of-band rejection or attenuation : The duplexer provides input selectivity for the receiver, output filtering for the transmitter, and isolation between the two. Rejection levels for both paths are specified over a number of frequency ranges. Two Tx-to-Rx isolation levels are critical to receiver performance:

■ Rx-band isolation : The transmitter is specified for out-of-band noise falling into the Rx band. This noise leaks from the transmit path into the receive path, and must be limited to avoid degrading receiver sensitivity. The required Rx-band isolation depends on the PA out ofband noise levels and Rx-band losses between the PA and LNA. Minimum duplexer Rx band isolation value is about 45 dB.

■ Tx-band isolation . the transmit channel power also leaks into the receiver. In this case, the leakage is outside the receiver passband but at a relatively high level. It combines with Rx band jammers to create cross-modulation products that fall in-band to desensitize the receiver. The required Tx-band isolation depends on the PA channel power and Tx-band losses between the PA and LNA. Minimum duplexer Tx-band isolation value is about 55 dB.

■ Passband ripple . the loss of this fairly narrowband device is not flat across its passband. Passband ripple increases the receive or transmit insertion loss at specific frequencies, creating performance variations across the band.s channels, and should be controlled.

■ Return loss . minimize mismatch losses with typical return losses of 10 dB or more (VSWR <2:1).

■ Power handling . high power levels in the transmit path must be accommodated without degraded

performance. The specified level depends on the operating band class and mobile station class (per the applicable standard), as well as circuit losses and antenna EIRP. Several duplexer characteristics depend upon its source and load impedances. QUALCOMM strongly recommends an isolator be used between the UMTS PA and duplexer to assure proper performance.

3. TECHNICAL BRIEF

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3.4.3 UMTS Power Amplifier (U104 : AWT6277R / U108 : AWT6273R)

U104 : UMTS2100 / U108: UMTS800 Power Amplifier modules

* AWT6277R Description: The AWT6277 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for Vref = +2.85V, a requirement for compatibility with the Qualcomm 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time.

The self-contained 4mm*4mm*1.1mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50Ω system.

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Fig. 3.4-1 AWT6277R Functional block diagram

Fig. 3.4-2AWT6277R Pin description

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Table 3.4-3 AWT6277R Electrical specification

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* AWT6273R Description : The AWT6273R HELP3TM PA is the 3rd generation WCDMA product for UMTS handsets. This PA incorporates ANADIGICS’ HELP3TM technology to provide low power consumption without the need for an external voltage regulator. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness. There are three selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time.

The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50Ω system.

Fig 3.4-4 AWT6273R Functional block diagram

Fig 3.4-5 AWT6273R Pin description

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3. TECHNICAL BRIEF

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Table 3.4-6 AWT6273R Electrical specification

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3. TECHNICAL BRIEF

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3.4.4 UMTS Rx RF filter (FL101, FL107)

FL102 - SAFEB2G14FA0F00 2110 ~ 2170MHz

FL107 - EFCH881MTDAA 869 ~ 894MHz

An RF filter is located between the UMTS LNA and mixer. Insertion loss is important, but not as critical as losses before the LNA. The most important parameters of this component include:

■ Out-of-band rejection or attenuation levels, usually specified to meet these conditions:

❏ Far out-of-band signals - ranging from DC up to the first band of particular concern and from the

last band of particular concern to beyond three times the highest passband frequency.

❏ Tx-band leakage - the transmitter channel power, although attenuated by the duplexer, still

presents a cross-modulation threat in combination with Rx-band jammers. The RF filter must provide rejection of this Tx-band leakage.

❏ Other frequencies of particular concern . bands known to include other wireless transmitters that

may deliver significant power levels to the receiver input.

■ Phase and amplitude balance - the ZIF architecture requires well-balanced differential inputs to the RTR6275 and RFR6725 IC. This is accomplished by the RF filters which take a singleended outputs from the ICs and provide differential outputs having nominal 180° phase separation. Phase and/or amplitude imbalance causes degraded common-mode rejection and second-order nonlinearity, so their requirements are specified jointly.

❏ ±9 degrees and ±1 dB

❏ ±1.5 degrees and ±0.1 dB

Of course, passband ripple and return loss are still important in all cases for the same reasons explained in the antenna switch module and duplexer sections.

3.4.5 VCTCXO (X700: TG-5010LH-19.2MHz)

The Voltage Controlled Temperature Compensated Crystal Oscillator (VCTCXO) provides the reference frequency for all RFIC synthesizers as well as clock generation functions within the MSM6280 IC. The oscillator frequency is controlled by the MSM6280’s TRK_LO_ADJ pulse density modulated signal in the same manner as the transmit gain control.

The filtered PDM signal results in an analog control signal into the VCTCXO tuning port whose voltage is directly proportional to the density of the digital bit stream. The MSM device varies the pulse density to change the analog control voltage that sets the oscillator frequency - all within a feedback control loop that minimizes handset frequency drift relative to the network.

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3.5 ISDB-T (1 Seg Receiver)

■ Summary of performance & specifications

■ Block diagram

Item specification

standards of broadcast Digital Terrestrial Television System adopt to ISDB-T

(Only1 seg)

Receiving Channel UHF ch.13~62

Transport Stream Output Signal serial

Transport Stream Output Level CMOS level (common power supply with TS decoder)

Decode/FEG/System ISDB-T Compliant

Power supply voltage DC1.2V/2.8V/1.5V

Power consumption 103mW

Sensitivity -96.0dBm (MODE3, G=1/8, IL=1/4, QPSK2/3,

Size 8.6 * 8.6 * 1.3mm

Transmission parameter

1) Segment UHF: 1segment

2) Mode Mode2, Mode3

3) Guard Interval 1/4, 1/8, 1/16

4) Encoding QPSK, 16QAM

5) Coding rate 1/2, 2/3

6) Interleave 1, 2, 4, 8

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3.6 Digital Baseband(DBB/MSM6280)

3.6.1 General Description

A. Features(MSM6280)

• Support for multimode operation - HSDPA, tri-band WCDMA (UMTS), quad GSM/GPRS/EDGE, GPS

• Support for HSDPA downlink up to 7.2 Mbps (Initial commercial release will support 3.6 Mbps

HSDPA. Later releases will have support for 7.2 Mbps HSDPA)

• Support for WCDMA (UMTS) uplink data rate up to 384 kbps

• High-performance ARM926EJ-S™ running at up to 225 MHz and 270 MHz for 3.6 Mbps and 7.2

Mbps HSDPA

• ARM Jazelle Java hardware acceleration for faster Java-based games and other applets

• QDSP4000 high-performance DSP cores

• Integrated gpsOne position location technology functionality

• Integrated Bluetooth 1.2 baseband processor for wireless connectivity to peripherals

• Qcamera with 15 fps QVGA viewfinder resolution, and support for 4 MP camera sensors

• Direct interface to digital camera module with video front end (VFE) image processing

• True 3D graphics for advanced wireless gaming

• SecureMSM v2.0: includes support for open mobile alliance (OMA) DRM v2.0, SIMlock and IMEI

integrity; support for Q-fuse.

• Audio on par with portable music players

• Vocoder support (AMR, FR, EFR, HR)

• Advanced 14 x 14 mm, 0.5 mm pitch, 409-pin lead-free CSP packaging technology

• SD/SDIO hardware support

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3.7 Block Diagram (MSM 6280)

Figure. Simplified Block Diagram of MSM6280

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3.8 Subsystem(MSM6280)

3.8.1 ARM Microprocessor Subsystem

The MSM6280 device uses an embedded ARM926EJ-S microprocessor. This microprocessor, through the system software, controls most of the functionality for the MSM device, including control of the external peripherals such as the keypad, LCD, RAM, ROM, and EEPROM devices. Through a generic serial bus interface (SBI), the ARM926EJ-S configures and controls the functionality of the RFR6220, RTR6250, RFR6250, and PM6650-2/PM6650-3 devices. For the RFCMOS platform, SSBI (single-wire SBI) will be supported.

3.8.2 WCDMA R99 features

The MSM6280 device supports the W-CDMA FDD release 99, including the following features:

■ All modes and data rates for W-CDMA frequency division duplex (FDD), with the following restrictions:

❑ The downlink supports the following specifications:

- Up to four physical channels, including the broadcast channel (BCH), if present

- Up to three dedicated physical channels (DPCHs)

- Spreading factor (SF) range support from 4 to 256

- The following transmit diversity modes are supported: Space time transmit diversity (STTD) Time-switched transmit diversity (TSTD) Closed-loop feedback transmit diversity (CLTD)

■ The uplink supports the following specifications:

❑ The uplink provides the following UE support:

- One physical channel, eight TrCH, and 16 TrBks starting at any frame boundary

- A maximum data rate of 384 kbps

❑ Full SF range support from 4 to 256

■ SMS (CS and PS)

■ PS data rate - 384 kbps DL / 384 kbps UL

■ CS data rate - 64 kbps DL / 64 kbps UL

■ AMR (all rates)

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