LG KU311 Service Manual
Date: October, 2006 / Issue 1.0
Service Manual
Model : KU311
Service Manual
KU311
KU311 SVC ENG_Cover_1003 2006.10.3 7:45 PM ˘`1
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1. INTRODUCTION .............................. 5
1.1 Purpose................................................... 5
1.2 Regulatory Information............................ 5
2. PERFORMANCE...............................7
2.1 System Overview .....................................7
2.2 Usable environment .................................8
2.3 Radio Performance ..................................8
2.4 Current Consumption.............................14
2.5 RSSI BAR ..............................................14
2.6 Battery BAR ...........................................14
2.7 Sound Pressure Level............................15
2.8 Charging ................................................16
3. TECHNICAL BRIEF ........................17
3.1 General Description ...............................17
3.2 GSM Mode.............................................20
3.3 WCDMA Mode .......................................23
3.4 LO Phase-locked Loop ..........................26
3.5 Off-chip RF Components .......................28
3.6 Digital Baseband(DBB/MSM6250A) ......35
3.7 Hardware Architecture ...........................36
3.8. Subsystem(MSM6250A) .......................38
3.9. External memory interface ....................41
3.10. H/W Sub System.................................42
3.11 LG-KU311 Main features .....................66
4. TROUBLE SHOOTING ...................72
4.1 RF Component.......................................72
4.2 SIGNAL PATH .......................................73
4.3 Checking VCTCXO Block ......................75
4.4 Checking Ant. SW Module Block ...........78
4.5 Checking WCDMA Block .......................81
4.6 Checking GSM Block .............................87
4.7 Bluetooth RF Block ................................95
4.8 Power ON Trouble .................................97
4.9 USB Trouble ..........................................99
4.10 SIM Detect Trouble ............................100
4.11 Key Sense Trouble ............................101
4.12 Camera Trouble .................................102
4.13 Main LCD Trouble..............................103
4.14 Folder ON/OFF Trouble .....................105
4.15 Camera Direction Detection Trouble..106
4.16 Trans Flash Trouble...........................107
4.17 Audio Trouble Shooting .....................108
4.18 Charger Trouble Shooting..................118
5. DOWNLOAD .................................121
5.1 Introduction ..........................................121
5.2 Downloading Procedure.......................121
5.3 Troubleshooting Download Errors .......135
5.4 Caution.................................................140
6. BLOCK DIAGRAM ........................141
6.1 GSM & WCDMA RF Block...................141
6.2 Interface Diagram ................................142
7. Circuit Diagram ............................143
8. pcb layout .....................................150
9. Calibration & RF Auto
Test Program ................................155
9.1 Configuration of HOT KIMCHI .............155
9.2 How to use HOT KIMCHI.....................159
9.3 Example for using HOT KIMCHI ..................160
10. EXPLODED VIEW &
REPLACEMENT PART LIST ..... 163
10.1 EXPLODED VIEW ............................ 163
10.2 Replacement Parts
<Mechanic component>.................... 165
<Main component> ........................... 168
10.3 Accessory ......................................... 186
Table Of Contents
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1.1 Purpose
This manual provides the information necessary to repair, calibration, description and download the
features of this model.
1.2 Regulatory Information
A. Security
Toll fraud, the unauthorized use of telecommunications system by an unauthorized part (for example,
persons other than your company’s employees, agents, subcontractors, or person working on your
company’s behalf) can result in substantial additional charges for your telecommunications services.
System users are responsible for the security of own system. There are may be risks of toll fraud
associated with your telecommunications system. System users are responsible for programming and
configuring the equipment to prevent unauthorized use. The manufacturer does not warrant that this
product is immune from the above case but will prevent unauthorized use of commoncarrier
telecommunication service of facilities accessed through or connected to it. The manufacturer will not
be responsible for any charges that result from such unauthorized use.
B. Incidence of Harm
If a telephone company determines that the equipment provided to customer is faulty and possibly
causing harm or interruption in service to the telephone network, it should disconnect telephone
service until repair can be done. A telephone company may temporarily disconnect service as long as
repair is not done.
C. Changes in Service
A local telephone company may make changes in its communications facilities or procedure. If these
changes could reasonably be expected to affect the use of the phones or compatibility with the net
work, the telephone company is required to give advanced written notice to the user, allowing the user
to take appropriate steps to maintain telephone service.
D. Maintenance Limitations
Maintenance limitations on the phones must be performed only by the manufacturer or its authorized
agent. The user may not make any changes and/or repairs expect as specifically noted in this manual.
Therefore, note that unauthorized alternations or repair may affect the regulatory status of the system
and may void any remaining warranty.
1. INTRODUCTION
1. INTRODUCTION
E. Notice of Radiated Emissions
This model complies with rules regarding radiation and radio frequency emission as defined by local
regulatory agencies. In accordance with these agencies, you may be required to provide information
such as the following to the end user.
F. Pictures
The pictures in this manual are for illustrative purposes only; your actual hardware may look slightly
different.
G. Interference and Attenuation
A phone may interfere with sensitive laboratory equipment, medical equipment, etc. Interference from
unsuppressed engines or electric motors may cause problems.
H. Electrostatic Sensitive Devices
ATTENTION
Boards, which contain Electrostatic Sensitive Device (ESD), are indicated by the sign.
Following information is ESD handling:
• Service personnel should ground themselves by using a wrist strap when exchange system boards.
• When repairs are made to a system board, they should spread the floor with anti-static mat which is
also grounded.
• Use a suitable, grounded soldering iron.
• Keep sensitive parts in these protective packages until these are used.
• When returning system boards or parts like EEPROM to the factory, use the protective package as
described.
1. INTRODUCTION
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2. PERFORMANCE
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2.1 System Overview
2. PERFORMANCE
Item Specification
Shape GSM900/1800/1900 and WCDMA Folder Handset
Size 93.7 X 49.0 X 18.6 mm
Weight 87 g (with 800mAh Battery)
Power 4.0V normal, 800 mAh Li-Polymer
Talk Time Over 125 min (WCDMA, Tx=12 dBm, Voice)
(with 800mAh) Over 160 min (GSM, Tx=Max, Voice)
Standby Time Over 200 Hrs (WCDMA, DRX=1.28)
(with 800mAh) Over 200 Hrs (GSM, Paging period=9)
Antenna Internal type
LCD Main 176 X 220 pixel (TFT) / sub 96 X 96 pixel (OLED)
LCD Backlight White LED Back Light (Main)
Camera 1.3 Mega pixel (CMOS)
Vibrator Yes (Coin Type)
LED Indicator No
MIC Yes
Receiver Yes
Earphone Jack Yes (18 pin)
Connectivity Bluetooth, USB
Volume Key Push Type(+, -)
External Memory Trans-Flash
I/O Connect 18 Pin MMI
2.2 Usable environment
1) Environment
2) Environment (Accessory)
* CLA : 12 ~ 24 V(DC)
2.3 Radio Performance
1) Transmitter - GSM Mode
* In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910
2. PERFORMANCE
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Item Specification
Voltage 4.0 V(Typ), 3.38 V(Min), [Shut Down : 3.28 V]
Operation Temp -20 ~ +60°C
Storage Temp -20 ~ +70°C
Humidity 85 % (Max)
Reference Spec. Min Typ. Max Unit
TA Power Available power 100 220 240 Vac
No Item GSM DCS & PCS
100k~1GHz -39dBm
9k ~ 1GHz -39dBm
MS allocated 1G~[A]MHz -33dBm
Channel
1G~12.75GHz -33dBm
[A]M~[B]MHz -39dBm
Conducted [B]M~12.75GHz -33dBm
1 Spurious 100k~880MHz -60dBm 100k~880MHz -60dBm
Emission 880M~915MHz -62dBm 880M~915MHz -62dBm
Idle Mode
915M~1GHz -60dBm 915M~1GHz -60dBm
1G~[A]MHz -50dBm 1G~[A]MHz -50dBm
[A]M~[B]MHz -56dBm [A]M~[B]MHz -56dBm
[B]M~12.5GHz -50dBm [B]M~12.5GHz -50dBm
2. PERFORMANCE
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* In case of DCS : [A] -> 1710, [B] -> 1785 * In case of PCS : [A] -> 1850, [B] -> 1910
No Item GSM DCS & PCS
30M ~ 1GHz -36dBm
30M~1GHz -36dBm
MS allocated 1G~[A]MHz -30dBm
Channel
1G ~ 4GHz -30dBm
[A]M~[B]MHz -36dBm
Radiated [B]M~4GHz -30dBm
2Spurious 30M ~ 880MHz -57dBm 30M~880MHz -57dBm
Emission 880M ~ 915MHz -59dBm 880M~915MHz -59dBm
Idle Mode
915M~1GHz -57dBm 915M~1GHz -57dBm
1G~[A]MHz -47dBm 1G~[A]MHz -47dBm
[A]M~[B]MHz -53dBm [A]M~[B]MHz -53dBm
[B]M~4GHz -47dBm [B]M~4GHz -47dBm
3 Frequency Error ±0.1ppm ±0.1ppm
4 Phase Error
±5(RMS) ±5(RMS)
±20(PEAK) ±20(PEAK)
3dB below reference sensitivity 3dB below reference sensitivity
Frequency Error RA250 : ±200Hz RA250: ±250Hz
5 Under Multipath and HT100 : ±100Hz HT100: ±250Hz
Interference Condition TU50 : ±100Hz TU50: ±150Hz
TU3 : ±150Hz TU1.5: ±200Hz
0 ~ 100kHz +0.5dB 0 ~ 100kHz +0.5dB
200kHz -30dB 200kHz -30dB
250kHz -33dB 250kHz -33dB
Due to 400kHz -60dB 400kHz -60dB
Output RF
modulation 600 ~ 1800kHz -66dB 600 ~ 1800kHz -60dB
6 1800 ~ 3000kHz -69dB 1800 ~ 6000kHz -65dB
Spectrum
3000 ~ 6000kHz -71dB ≥6000kHz -73dB
≥6000kHz -77dB
Due to
400kHz -19dB 400kHz -22dB
Switching
600kHz -21dB 600kHz -24dB
transient
1200kHz -21dB 1200kHz -24dB
1800kHz -24dB 1800kHz -27dB
2. PERFORMANCE
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No Item GSM DCS & PCS
Frequency offset 800kHz
7 Intermodulation attenuation –
Intermodulation product should
be Less than 55dB below the
level of Wanted signal
Power control
Power Tolerance
Power control
Power Tolerance
Level (dBm) (dB) Level (dBm) (dB)
533±3 030±3
631±3 128±3
729±3 226±3
827±3 324±3
925±3 422±3
10 23 ±3 5 20 ±3
8 Transmitter Output Power 11 21 ±3 6 18 ±3
12 19 ±3 7 16 ±3
13 17 ±3 8 14 ±3
14 15 ±3 9 12 ±4
15 13 ±3 10 10 ±4
16 11 ±5 11 8 ±4
17 9 ±5 12 6 ±4
18 7 ±5 13 4 ±4
19 5 ±5 14 2 ±5
15 0 ±5
9 Burst timing Mask IN Mask IN
2. PERFORMANCE
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2) Transmitter - WCDMA Mode
No Item Specification
1
Maximum Output Power
Class 3 : +24dBm(+1/-3dB)
Class 4 : +21dBm(±2dB)
2 Frequency Error ±0.1ppm
3 Open Loop Power control in uplink ±9dB@normal, ±12dB@extreme
Adjust output(TPC command)
cmd 1dB 2dB 3dB
+1 +0.5/1.5 +1/3 +1.5/4.5
4 Inner Loop Power control in uplink 0 -0.5/+0.5 -0.5/+0.5 -0.5/+0.5
-1 -0.5/-1.5 -1/-3 -1.5/-4.5
Group (10 equel command group)
+1 +8/+12 +16/+24
5 Minimum Output Power -50dBm(3.84MHz)
Qin/Qout : PCCH quality levels
6 Out-of-synchronization handling of output power Toff@DPCCH/Ior : -22 -> -28dB
Ton@DPCCH/Ior : -24 -> -18dB
7 Transmit OFF Power -56dBm(3.84MHz)
8 Transmit ON/OFF Time Mask
±25us
PRACH,CPCH,uplinlk compressed mode
±25us
9 Change of TFC
Power varies according to the data rate
DTX : DPCH off
(minimize interference between UE)
10 Power setting in uplink compressed ±3dB(after 14slots transmission gap)
11 Occupied Bandwidth(OBW) 5MHz(99%)
-35-15*(∆f-2.5)dBc@∆f=2.5~3.5MHz,30k
12 Spectrum emission Mask
-35-1*(∆f-3.5)dBc@∆f=3.5~7.5MHz,1M
-39-10*(∆f-7.5)dBc@∆f=7.5~8.5MHz,1M
-49dBc@∆f=8.5~12.5MHz,1M
3)Receiver - GSM Mode
2. PERFORMANCE
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No Item Specification
13 Adjacent Channel Leakage Ratio(ACLR)
33dB@5MHz, ACP>-50dBm
43dB@10MHz, ACP>-50dBm
-36dBm@f=9~150KHz, 1K BW
-36dBm@f=50KHz~30MHz, 10K BW
-36dBm@f=30MHz~1000MHz, 100K BW
14
Spurious Emissions -30dBm@f=1~12.5GHz, 1M BW
(*: additional requirement) (*)-41dBm@f=1893.5~1919.6MHz, 300K
(*)-67dBm@f=925~935MHz, 100K BW
(*)-79dBm@f=935~960MHz, 100K BW
(*)-71dBm@f=1805~1880MHz, 100K BW
15 Transmit Intermodulation
-31dBc@5MHz,Interferer -40dBc
-41dBc@10MHz, Interferer -40dBc
16 Error Vector Magnitude (EVM)
17.5%(>-20dBm)
(@12.2K, 1DPDCH+1DPCCH)
17 Transmit OFF Power
-15dB@SF=4.768Kbps, Multi-code
transmission
No Item GSM DCS & PCS
1
Sensitivity (TCH/FS Class II) -105dBm -105dBm
2
Co-Channel Rejection
C/Ic=7dB Storage -30 ~ +85
(TCH/FS Class II, RBER, TU high/FH)
3 Adjacent Channel 200kHz C/Ia1=-12dB C/Ia1=-12dB
Rejection 400kHz C/Ia2=-44dB C/Ia2=-44dB
Wanted Signal :-98dBm Wanted Signal :-96dBm
4
Intermodulation Rejection 1st interferer:-44dBm 1st interferer:-44dBm
2nd interferer:-45dBm 2nd interferer:-44dBm
5
Blocking Response Wanted Signal :-101dBm Wanted Signal :-101dBm
(TCH/FS Class II, RBER)
Unwanted : Depend on Frequency Unwanted : Depend on Frequency
2. PERFORMANCE
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4) Receiver - WCDMA Mode
No Item Specification
1 Reference Sensitivity Level -106.7 dBm(3.84 MHz)
-25dBm(3.84MHz)
2 Maximum Input Level -44dBm/3.84MHz(DPCH_Ec)
UE@+20dBm output power(Class3)
3 Adjacent Channel Selectivity (ACS)
33dB
UE@+20dBm output power(Class3)
-56dBm/3.84MHz@10MHz
4In-band Blocking UE@+20dBm output power(Class3)
-44dBm/3.84MHz@15MHz
UE@+20dBm output power(Class3)
-44dBm/3.84MHz@f=2050~2095 and
2185~2230MHz
UE@+20dBm output power(Class3)
-30dBm/3.84MHz@f=2025~2050 and
5 Out-band Blocking 2230~2255MHz
UE@+20dBm output power(Class3)
-15dBm/3.84MHz@f=1~2025 and
2255~12500MHz
UE@+20dBm output power(Class3)
6 Spurious Response
-44dBm CW
UE@+20dBm output power(Class3)
-46dBm CW@10MHz
7 Intermodulation Characteristic -46dBm/3.84MHz@20MHz
UE@+20dBm output power(Class3)
-57dBm@f=9KHz~1GHz, 100K BW
8 Spurious Emissions -47dBm@f=1~12.5GHz, 1M BW
-60dBm@f=1920MHz~1980MHz, 3.84M BW
-60dBm@f=2110MHz~2170MHz, 3.84M BW
2. PERFORMANCE
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2.4 Current Consumption
(Stand by and Voice Call Test Condition : Bluetooth off, LCD backlight Off)
(VT Test Condition : Speaker off, LCD backlight On)
2.5 RSSI BAR
2.6 Battery BAR
Indication Standby
Bar 4 Over 3.81 ± 0.05V
Bar 4 → 3 3.76 ± 0.05V
Bar 3 → 2 3.68 ± 0.05V
Bar 2 → 1 3.60 ± 0.05V
Bar 1 → Empty 3.45 ± 0.05V
Low Voltage, 3.47± 0.05V (Talk) / 3.45 ± 0.05V (Stand-by)
Warning message+ Blinking [Interval : 3min(Stand-by) / 1min(Talk)]
Power Off 3.25 ± 0.05V
Stand by Voice Call VT
WCDMA
Under 4.0 mA Under 384 mA Under 533mA
(DRX=1.28) (Tx=12dBm) (Tx=12dBm)
Under 4 mA (Paging=5period) Under 300 mA
GSM Under 5.7 mA (@Bluetooth (Tx=Max)
Connected, Paging=5period)
Level Change WCDMA GSM
BAR 4 → 3 -88 ± 2 dBm -91 ± 2 dBm
BAR 3 → 2 -98 ± 2 dBm -96 ± 2 dBm
BAR 2 → 1 -108 ± 2 dBm -101 ± 2 dBm
BAR 1 → 0 -112 ± 2 dBm -106 ± 2 dBm
2. PERFORMANCE
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2.7 Sound Pressure Level
No Test Item Specification
1 Sending Loudness Rating (SLR) 8 ±3 dB
2 Receiving Loudness Rating (RLR)
Nor -4 ± 3 dB
Max -15 ± 3 dB
3 Side Tone Masking Rating (STMR) Min 17 dB
4 Echo Loss (EL) Min 40 dB
5 Idle Noise-Sending (INS) Max -64 dBm0p
6 Idle Noise-Receiving (INR)
Nor Under -47 dBPA
Max Under -36 dBPA
7 Sending Loudness Rating (SLR) 8±3dB
8 Receiving Loudness Rating (RLR)
Nor -1 ±3 dB
Max -12 ±3 dB
9 Side Tone Masking Rating (STMR) Min 25 dB
10 Echo Loss (EL) Min 40 dB
11 Idle Noise-Sending (INS) Max -55 dBm0p
12 Idle Noise-Receiving (INR)
Nor Under -45 dBPA
Max Under -40 dBPA
TDMA Noise
-. GSM : Power Level : 5
DCS/PCS : Power Level : 0
(Cell Power : -90 ~ -105 dBm)
13
-. Acoustic (Max Vol.)
MS/Headset SLR : 8 ±3dB
MS/Headset RLR : -15 ± 3dB/-12 ± 3
(SLR/RLR : Mid-value setting)
MS
Headset
MS and
Headset
Max
Under -62 dBm
2.8 Charging
• Charging Method : CC & CV (Constant Current and Constant Voltage)
• Maximum Charging Voltage : 4.2 V
• Maximum Charging Current : 600 mA
• Normal Battery Capacity : 800 mAh
• Charging Time : Max 3 hours (except for trickle charging time)
• Full charging indication current (charging icon stop current) : 60 mA
• Cut-off voltage : 3.20 V
2. PERFORMANCE
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3. TECHNICAL BRIEF
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3.1 General Description
The KU311 supports UMTS-2100 DS-WCDMA, EGSM-900, DCS-1800, and PCS-1900. All receivers
and the UMTS transmitter use the radioOne1Zero-IF architecture to eliminate intermediate frequencies,
directly converting signals between RF and baseband. The EGSM, DCS1800 and PCS1900
transmitters use a baseband-to-IF upconversion followed by an offset phase-locked loop that
translates the GMSK-modulated signal to RF.
1
QUALCOMM’s branded chipset that implements a Zero-IF radio architecture.
3. RF TECHNICAL BRIEF
KU311 high-level RF functional block diagram
A generic, high-level functional block diagram of KU311 is shown in Figure 1-1. One antenna collects
base station forward link signals and radiates handset reverse link signals.
The antenna connects with receive and transmit paths through a switch module (plus a duplexer for
UMTS-2100 operation).
UMTS band signals at the antenna are switched to the relevant UMTS duplexer. The UMTS receive
band signals are amplified by the front-end LNAs of the RFR6250 IC before passing through a bandpass filter and being applied to the mixer inputs of the RFR6250 IC.
On-chip circuits down-convert the received signal directly from RF to baseband using radioOne ZeroIF techniques. Generation and distribution of the UMTS LO, for the downconverter, is performed
entirely on-chip (except for the loop filter). The RFR6250 IC outputs analog baseband signals for
processing by the MSM device. This baseband interface is shared with the RTR6250 GSM receiver
outputs, but is separate from the GPS baseband interface.
EGSM, DCS and PCS receive signals from the antenna switch module pass through their band-pass
filters, then are applied to the RTR6250 IC. In a similar fashion to the UMTS paths, RTR6250 IC
circuits down-convert the received signals directly from RF to baseband. The GSM LO for multiband
down conversion is entirely generated within the RTR6250 IC (PLL and distribution functions) with
exception of the off-chip loop filter.
The RTR analog baseband outputs are routed to the MSM6250A IC for further processing (an
interface shared with the RFR UMTS receive paths).
The UMTS transmit path begins with analog baseband signals from the MSM device that drive the
RTR6250 IC. Integrated PLL and VCO circuits generate the Tx LO used in the quadrature upconverter
that translates baseband signals directly to RF. The RTR6250 output driver stages deliver fairly highlevel signals that are filtered and applied to the power amplifiers (PA). The PA output is routed to the
antenna through a duplexer and switch module.
The shared EGSM-900, DCS-1800, and PCS-1900 transmit path begins with the same baseband
interface from the MSM6250A IC that is used for the UMTS band. A single EGSM/DCS/PCS
quadrature upconverter translates the GMSK-modulated signal to a convenient intermediate frequency
(IF) that forms one input to an offset phase-locked loop (OPLL). OPLL functions are split between the
RTR6250 IC and off-chip loop filter and dual Tx VCO circuits, and translate the GMSK-modulated
signal to the desired EGSM-900, DCS-1800 or PCS-1900 channel frequency. This signal is applied to
a dual power amplifier (only one is active at a time). The enabled path continues with the PA, an
automated power control (APC) circuit that samples the transmit power and adjusts its level, the switch
module (which includes a band-appropriate lowpass filter), and the antenna.
3. TECHNICAL BRIEF
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3. TECHNICAL BRIEF
- 19 -
KU311 power supply voltages are managed and regulated by the PM6650 Power Management IC.
This versatile device integrates all wireless handset power management, general housekeeping, and
user interface support functions into a single mixed signal IC. It monitors and controls the external
power source and coordinates battery recharging while maintaining the handset supply voltages using
low dropout, programmable regulators.
The device’s general housekeeping functions include an ADC and analog multiplexer circuit for
monitoring on-chip voltage sources, charging status, and current flow, as well as user-defined off-chip
variables such as temperature, RF output power, and battery ID. Various oscillator, clock, and counter
circuits support IC and higher-level handset functions. Key parameters such as under-voltage lockout
and crystal oscillator signal presence are monitored to protect against detrimental conditions.
3.2 GSM Mode
3.2.1 GSM Receiver
The Dual-mode KU311’s receiver functions are split between the two RFICs as follows:
• UMTS-2100 operation uses the RFR6250 Receiver ICs to implement the receive signal path,
accepting an RF input and delivering analog baseband outputs (I and Q).
• EGSM-900, DCS-1800, and PCS-1900 modes both use the RTR6250 IC only. Each mode has
independent front-end circuits and down-converters, but they share common baseband circuits (with
only one mode active at a time). All receiver control functions are beginning with SBI2-controlled
parameters.
The EGSM, DCS, and PCS receiver inputs of RTR6250 are connected directly to the transceiver frontend circuits(filters and antenna switch module). EGSM, DCS, and PCS receiver inputs are similar to
the RFR6200 UMTS Rx input in that they also use differential configurations to improve commonmode rejection and second-order non-linearity performance. The balance between the complementary
signals is critical and must be maintained from the RF filter outputs all the way into the IC pins Since
EGSM, DCS, and PCS signals are time-division duplex (the handset can only receive or transmit at
one time), switches are used to separate Rx and Tx signals in place of frequency duplexers - this is
accomplished in the switch module.
The EGSM, DCS, and PCS receive signals are routed to the RTR6250 through band selection filters
and matching networks that transform single-ended 50-Ω sources to differential impedances optimized
for gain and noise figure. Similar to the RFR, the RTR input uses a differential configuration to improve
second-order inter-modulation and common mode rejection performance. The RTR6250 input stages
include MSM-controlled gain adjustments that maximize receiver dynamic range.
The amplifier outputs drive the RF ports of the quadrature RF-to-baseband downconverters.
The downconverted baseband outputs are multiplexed and routed to lowpass filters (one I and one Q)
having passband and stopband characteristics suitable for GMSK processing.
These filter circuits include DC offset corrections. The filter outputs are buffered and passed on to the
MSM6250A IC for further processing (an interface shared with the RFR6200 UMTS receiver outputs).
2
The RFIC operating modes and circuit parameters are MSM-controlled through the proprietary 3-line Serial Bus Interface (SBI). The Application
Programming Interface (API) is used to implement SBI commands. The API is documented in AMSS Software - please see applicable AMSS
Software documentation for details.
3. TECHNICAL BRIEF
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3. TECHNICAL BRIEF
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3.2.2 GSM Transmitter
The shared GSM Low-band (EGSM900) and High-band (DCS1800, PCS1900) transmit path begins
with the baseband inputs from the MSM6250A IC. These differential analog input signals are buffered,
lowpass filtered, corrected for DC offsets then applied to the GSM quadrature upconverter. The
upconverter LO signals are generated from the transceiver VCO signal by the LO distribution and
generation circuits within RTR6250. This upconverter translates the GMSK-modulated signal to a
convenient intermediate frequency (IF) that forms one input to a frequency/phase detector circuit. This
IF signal is the reference input to an offset phase-locked loop (OPLL) circuit as shown in Figure 3.2.2-1.
The feedback path of this OPLL circuit includes a downconversion from the RF output frequency range
to the IF range. The two inputs to this downconversion mixer are formed as follows:
1. The dual Tx VCO output (operating in the desired RF output frequency range) is buffered within the
RTR6250 IC then applied to the mixer RF port.
2. The LO Generation and Distribution circuits that deliver the transmit path.s LO for the baseband-to-IF
upconversion also provides the .offset LO. signal that is applied to the feedback path.s mixer LO port.
The mixer IF port output is the offset feedback signal - the variable input to the frequency/phase
detector circuit. The detector compares its variable input to its reference input and generates an error
signal that is lowpass filtered by the loop filter and applied to the dual Tx VCO tuning port to force the
VCO output in the direction that minimizes errors.
As mentioned earlier, the VCO output is connected to the feedback path thereby creating a closed-loop
control system that will force frequency and phase errors between the variable and reference inputs to
zero.
3. TECHNICAL BRIEF
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Figure 3.2.2-1 Offset phase-locked loop interfaces
3. TECHNICAL BRIEF
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The waveform at the dual Tx VCO output is the GMSK-modulated signal centered at the desired GSM
channel frequency. A phase-locked loop circuit is used to translate the GMSK-modulated signal from IF
to RF primarily for two reasons:
1. Phase-locked loops provide a lowpass filter function from the reference input to the VCO output. This
results in a bandpass function centered at the desired channel frequency that provides steep, wellcontrolled rejection of the out-of-band spectrum.
2. The resulting output bandpass function is virtually unchanged as the transmitter is tuned over
channels spanning the GSM operating band.
The PA is a key component in any transmitter chain and must complement the rest of the transmitter
precisely. For GSM band operation, the closed-loop transmit power control functions add even more
requirements relative to the UMTS PA. In addition to gain control and switching requirements, the usual
RF parameters such as gain, output power level, several output spectrum requirements, and power
supply current are critical. The gain must be sufficient and variable to deliver the desired transmitter
output power given the VCO output level, the subsequent passive devices’ losses, and the control set
point. The maximum and minimum transmitter output power levels depend upon the operating band
class and mobile station class per the applicable standard. Transmitter timing requirements and in-band
and out-of-band emissions, all dominated by the PA, are also specified by the applicable standard.
The active dual Tx VCO output is applied to the dual power amplifier to continue the transmit path, and
feedback to the RTR6250 IC to complete the frequency control loop. The PA operating band (EGSM or
DCS/PCS) is selected by the MSM device GPIO control (GSM_PA_BAND).
3.3 WCDMA Mode
3.3.1 Receiver
The UMTS duplexer receiver output is routed to LNA circuits within the RFR6250 IC. The LNA gain is
dynamically controlled by the MSM6250A IC to cover full receiver dynamic range and to save current
consumption.
The UMTS LNA output is routed to the down conversion mixer inputs, in the RFR6250 IC, through a
band selection filter that transforms a single-ended 50-Ω source to differential 100-Ω load impedance
that is matched to the RFR6250 IC. The RFR input uses a differential configuration to improve secondorder inter-modulation and common mode rejection performance. The RFR6250 IC input stages include
MSM-controlled gain adjustments that further extend receiver dynamic range.
The amplifier output drives the RF port of the quadrature RF-to-baseband down-converter.
The down-converted baseband outputs are routed to low-pass filters (one I and one Q) having passband and stop-band characteristics suitable for DS-WCDMA processing. The filter outputs are buffered
and passed on to the MSM6250A IC for further processing. This baseband interface is shared with the
RTR6250 GSM receiver outputs.
The RFR6250 IC includes LO generation and distribution circuitry to reduce off-chip component
requirements. The GPS RX LO source is created using the PLL control elements of the RTR6250
PLL2, via a discrete loop filter components, in tandem with the VCO in the RFR6250. Using only this
PLL signal, the RFR6250 LO generation and distribution circuits create the necessary LO signals for
the UMTS quadrature downconverter.
By definition, the ZIF down-converter requires F
LO
equal to FRF, and the RTR6250/RFR6250 design
achieves this without allowing FVCO to equal FRF.
3. TECHNICAL BRIEF
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Figure 3.3.1-1 RFR6250 IC functional block diagram
3. TECHNICAL BRIEF
- 25 -
3.3.2 Transmitter
The UMTS transmit path begins with analog baseband signals from the MSM device that drive the
RTR6250 IC. The RTR6250 IC provides all the UMTS transmitter active signalpath circuits except the
power amplifiers. Analog (I and Q) differential signals from the MSM device are buffered, filtered, and
applied to Baseband-to-RF quadrature upconverters.
Gain control is implemented on-chip. The RF outputs include an integrated matching inductor,
reducing the off-chip matching network to a single series capacitor.
The RTR6250 UMTS output is routed to its power amplifier through a bandpass filter, and delivers
fairly high-level signals that are filtered and applied to the PA. Between The PA device output and
Duplexer input KU311 has directional coupler. And this device in KU311 needs not to use isolator.
Transmit power is delivered from the duplexer to the antenna through the switch module.
The RTR6250 IC integrates LO generation and distribution circuits on-chip, substantially reducing offchip requirements. Various modes and programmable features result in a highly flexible transceiver LO
output that supports not only UMTS transmissions, but all EGSM900 and DCS1800/PCS1900 Rx and
Tx modes as well.
The UMTS Tx LO (PLL1) is generated almost entirely on-chip, requiring only the loop filter off-chip
(two capacitors and two resistors); all UMTS Tx VCO and PLL circuits are on-chip. An internal
RTR6250 switch routes the internal VCO signal to the LO generation and distribution circuits to create
the necessary UMTS Tx LO signals.
3.4 LO Phase-locked Loop
Most LO functions are fully integrated on-chip, do not require user adjustment, and need not be
considered by handset designers. QUALCOMM has established and implemented frequency plans
and LO generation schemes that support the radioOne 6250-IIseries chipset while requiring minimal
off-chip design effort. Only one area requires handset designer attention: the loop filters of each
phase-locked loop (PLL).
3.4.1 UMTS Receiver LO generation
All the active circuits necessary for generating the UMTS LO are integrated within the RFR6250 IC;
only the passive loop filter is off-chip. The UMTS PLL and VCO are automatically disabled when the
handset is not processing UMTS signals.
All the UMTS PLL circuits are contained within the RFR6250 IC: reference divider, phase detector,
charge pump, feedback divider, and digital logic that generate lock status. The VC-TCXO signal
provides the synthesizer input (TCXO), the frequency reference to which the PLL is phase and
frequency locked. The reference is divided by the R-counter to create a fixed frequency input to the
phase detector, FR. The other phase detector input (FV) varies as the loop acquires lock, and is
generated by dividing the VCO frequency using the feedback path’s N-counter. The closed loop will
force FV to equal FR when locked. If the loop is not locked the error between FV and FR will create an
error signal at the output of the charge pump. This error signal is filtered by the external loop filter and
applied to the UMTS VCO (at UMTS_TUNE on the RFR6250 IC), tuning the output frequency such
that the error is decreased. Ultimately, the loop forces the error to approach zero and the PLL is phase
and frequency locked. The UMTS VCO signal is routed internally within the RTR6250 IC to the Ncounter, closing the feedback path that allows the loop to lock.
3. TECHNICAL BRIEF
- 26 -
Figure 3.4.1-1 UMTS Rx PLL functional block diagram
3. TECHNICAL BRIEF
- 27 -
The VCO output drives LO generation and distribution circuits (within the RFR6250 IC) to create the
necessary LO signals for Rx quadrature down-converter for either UMTS band.
By definition, a Zero-IF down-converter requires FRF equal to FLO, and the RFR6250 design achieves
this without allowing FVCO to equal FRF.
The tuning signal is routed off-chip for filtering, allowing optimization for different applications.
3.4.2 Transceiver PLL (PLL1)
All LO functional blocks for the other handset modes(UMTS Tx, EGSM Tx/Rx, DCS Tx/Rx, PCS
Tx/Rx) are integrated into the RTR6250 IC except the loop filter components (Figure 3.4.2-1). On-chip
circuits include reference divider, phase detector, charge pump, VCO, feedback divider, and digital
logic status. The functional description given in Section 3.4.1 for the UMTS Rx PLL applies to the
Transceiver PLL as well.
The off-chip loop filter allows optimization of key PLL performance characteristics (stability, transitory
response, settling time, and phase noise) for different applications Guidelines are provided in the next
subsection for proper implementation of this critical circuit.
Figure 3.4.2-1 Transceiver PLL functional block diagram
3.5 Off-chip RF Components
3.5.1 Front End Module(FL1000)
Front End module integrates antenna switch module and GSM Rx filter.
The antenna switch module allows multiple operating bands and modes to share the same antenna. In
the KU311 design, a common antenna connects to one of six paths: 1) UMTS-2100 Rx/Tx, 2) EGSM
Rx, 3) DCS-1800 Rx, 4) PCS-1900 Rx, 5)EGSM Tx, and 6) DCS-1800, PCS-1900 Tx. UMTS
operation requires simultaneous reception and transmission, so the UMTS Rx/Tx connection is routed
to a duplexer that separates receive and transmit signals. GSM band of operation is time division
duplexed, so only the receiver or transmitter is active at any time and a frequency duplexer is not
required. The module includes lowpass filters for the GSM bands transmit paths to reduce out-of-band
emissions, PA harmonics in particular.
3.5.2 UMTS duplexer (FL1003)
A UMTS duplexer splits a single operating band into receive and transmit paths. Important
performance requirements include:
-. Insertion loss . this component is also in the receive and transmit paths; In the KU311 typical losses:
UMTS Tx = 1.5 dB, UMTS Rx = 2.3 dB.
-. Out-of-band rejection or attenuation . the duplexer provides input selectivity for the receiver, output
filtering for the transmitter, and isolation between the two. Rejection levels for both paths are
specified over a number of frequency ranges. Two Tx-to-Rx isolation levels are critical to receiver
performance:
-. Rx-band isolation . the transmitter is specified for out-of-band noise falling into the Rx band. This
noise leaks from the transmit path into the receive path, and must be limited to avoid degrading
receiver sensitivity. The required Rx-band isolation depends on the PA out of-band noise levels and
Rx-band losses between the PA and LNA. Typical duplexer Rx band isolation value is 42 dB.
-. Tx-band isolation . the transmit channel power also leaks into the receiver. In this case, the leakage
is outside the receiver passband but at a relatively high level. It combines with Rx band jammers to
create cross-modulation products that fall in-band to desensitize the receiver. The required Tx-band
isolation depends on the PA channel power and Tx-band losses between the PA and LNA. Typical
duplexer Tx-band isolation value is 50 dB.
-. Passband ripple . the loss of this fairly narrowband device is not flat across its passband.
Passband ripple increases the receive or transmit insertion loss at specific frequencies, creating
performance variations across the band channels, and should be controlled.
-. Return loss . minimize mismatch losses with typical return losses of 10 dB or more (VSWR <2:1).
3. TECHNICAL BRIEF
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3. TECHNICAL BRIEF
- 29 -
3.5.3 UMTS Power Amplifier (U1002)
The WS2512TR1G meets the increasing demands for higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-ofthe-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency
for different output power levels, and a shutdown mode with low leakage current, increase handset talk
and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates
matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Figure.3.5.3-1 UMTS PA functional block diagram
3.5.4 Thermistor (R1032)
This thermistor senses temperature variations around UMTS PA to adjust PA gain deviation for assure
compliance with the applicable transmit power control standards. Negative temperature compensation
thermistor is used in the KU311.
3.5.5 UMTS transmit power detector (U1003)
This detector couples PA output power level to calibrate the transmitter characteristic over the channel
variation and temperature. Its detector coupling range and converted voltage is based on diode
sensitivity and transmitter power level.
The KU311 uses National Semiconductor LMV228TLX power detector IC. In Figure 3.5.5-1,
Directional coupler is set to 18dB tab coupling. The output voltage is proportional to the logarithm of
the input power. Figure3.5.5-2 shows the output voltage versus PA output power of the LMV228TLX
setup as depicted in Figure1.5.5-1
3. TECHNICAL BRIEF
- 30 -
Figure 3.5.5-1 Block diagram of LMV228TLX Typical Application
Figure 3.5.5-2 Power detector response, Vout vs PA output power
3. TECHNICAL BRIEF
- 31 -
3.5.6 Dual band GSM power amplifier (U1001)
The SKY77318 Power Amplifier Module (PAM) is designed in a low profile (1.2 mm), compact form
factor for tri-band cellular handsets comprising GSM900, DCS1800, and PCS1900 operation. The
PAM also supports Class 12 General Packet Radio Service (GPRS) multi-slot operation.
The module consists of separate GSM900 PA and DCS1800/PCS1900 PA blocks, impedancematching circuitry for 50 Ω input and output impedances, and a Power Amplifier Control (PAC) block
with an internal current-sense resistor. The custom BiCMOS integrated circuit provides the internal
PAC function and interface circuitry.
Fabricated onto a single Gallium Arsenide (GaAs) die, one Heterojunction Bipolar Transistor (HBT) PA
block supports the GSM900 bands and the other supports the DCS1800 and PCS1900 bands. Both
PA blocks share common power supply pins to distribute current. The GaAs die, the Silicon (Si) die,
and the passive components are mounted on a multi-layer laminate substrate. The assembly is
encapsulated with plastic overmold.
RF input and output ports of the SKY77318 are internally matched to a 50 Ω load to reduce the
number of external components for a quad-band design. Extremely low leakage current (2.5 µA,
typical) of the dual PA module maximizes handset standby time. The SKY77318 also contains bandselect switching circuitry to select GSM (logic 0) or DCS/PCS (logic 1) as determined from the Band
Select (BS) signal. In Figure 3.5.6-1 below, the BS pin selects the PA output (DCS/PCS OUT or
GSM900 OUT) and the Analog Power Control (VAPC) controls the level of output power.
The VBATT pin connects to an internal current-sense resistor and interfaces to an integrated power
amplifier control (iPAC™) function, which is insensitive to variations in temperature, power supply,
process, and input power. The ENABLE input allows initial turn-on of PAM circuitry to minimize battery
drain.
Figure 3.5.6-1 GSM PA functional block diagram
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