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FMMT591
SOT-23 Transistor(PNP)
BASE
1.
EMITTER
2.
COLLECTOR
3.
Features
Low equivalent on-resistance
Marking :591
MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
V
V
IC
PC
Tj
T
CBO
CEO
EBO
stg
Collector-Base Voltage -80 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current -Continuous -1 A
Collector Power Dissipation 500 mW
Junction Temperature 150
Storage Temperature -55-150
=25℃ unless otherwise noted)
A
℃
℃
SOT-23
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage
V
(BR)CEO
V
Collector cut-off current
Emitter cut-off current
h
DC current gain
h
h
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
Base-emitter saturation voltage V
Base-emitter voltage V
(BR)CBO
(BR)EBO
I
CBO
I
EBO
h
FE(1)
FE(2)
FE(3)
FE(4)
BE(sat)
1
BE
=-100μA, IE=0 -80
I
C
1
I
=-10mA, IB=0 -60
C
=-100μA, IC=0 -5
I
E
1
1
1
1
1
1
=-60V, IE=0
V
CB
=-4V, IC=0
V
EB
=-5V, IC=-1mA 100
V
CE
V
=-5V, IC=-500mA 100
CE
V
=-5V, IC=-1A 80
CE
V
=-5V, IC=-2A 15
CE
I
=-500mA, IB=-50mA
C
I
=-1A, IB=-100mA
C
I
=-1A, IB=-100mA
C
V
=-5V, IC=-1A
CE
-1.2 V
V
V
V
-0.1
-0.1
300
-0.3
-0.6
-1
μA
μA
V
V
V
Transition frequency
Collector output capacitance
1
Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
f
VCE=-10V,IC=-50mA,,f=100MHz
T
C
ob
=-10V,f=1MHz
V
CB
150 MHz
10 pF
Page 2
Typical Characteristics
FMMT591
SOT-23 Transistor(PNP)
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