LG BC808-25LT1G, BC808-40LT1G Service Manual
BC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
−25 V
−30 V
−5.0 V
−500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = F or G
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1
Publication Order Number:
BC808−25LT1/D
BC808−25LT1G, BC808−40LT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter−Base Breakdown Voltage
= −1.0 mA)
(I
E
Collector Cutoff Current
(V
= −20 V)
CB
= −20 V, TJ = 150°C)
(V
CB
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC808−25
BC808−40
(IC = −500 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
obo
FE
T
−25 − − V
−30 − − V
−5.0 − − V
−
−
160
250
40
−
−100
−
−
−
−
−5.0
400
600
−
nA
mA
− − −0.7 V
− − −1.2 V
100 − − MHz
− 10 −0.7 pF
−
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC808−25LT1G
BC808−40LT1G
5F
5G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
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