BC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I
CEO
CBO
EBO
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
P
D
R
q
JA
P
D
R
q
JA
stg
−25 V
−30 V
−5.0 V
−500 mAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = F or G
M = Date Code*
G =Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
1
Publication Order Number:
BC808−25LT1/D
BC808−25LT1G, BC808−40LT1G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter−Base Breakdown Voltage
= −1.0 mA)
(I
E
Collector Cutoff Current
(V
= −20 V)
CB
= −20 V, TJ = 150°C)
(V
CB
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V) BC808−25
BC808−40
(IC = −500 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(on)
f
C
obo
FE
T
−25 − − V
−30 − − V
−5.0 − − V
−
−
160
250
40
−
−100
−
−
−
−
−5.0
400
600
−
nA
mA
− − −0.7 V
− − −1.2 V
100 − − MHz
− 10 −0.7 pF
−
ORDERING INFORMATION
Device Specific Marking Package Shipping
BC808−25LT1G
BC808−40LT1G
5F
5G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
†
http://onsemi.com
2
1000
)
100
, DC CURRENT GAIN
FE
h
BC808−25LT1G, BC808−40LT1G
VCE = -1.0 V
TA = 25°C
10
-1.0
-1000-0.1 -10 -100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
TJ = 25°C
-0.8
-0.6
IC =
-500 mA
-0.4
-0.2
, COLLECTOR-EMITTER VOLTAGE (VOLTS
IC = -10 mA
CE
V
0
-0.01 -0.1 -10 -100-1.0
IC = -100 mA
IC = -300 mA
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
+1.0
-1.0
TA = 25°C
V
@ IC/IB = 10
-0.8
BE(sat)
-0.6
-0.4
V, VOLTAGE (VOLTS)
-0.2
V
@ IC/IB = 10
CE(sat)
0
-1.0 -10 -1000-100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
V
BE(on)
@ VCE = -1.0 V
qVC for V
CE(sat)
0
C
ib
-1.0
qVB for V
-2.0
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
V
BE
IC, COLLECTOR CURRENT
Figure 4. Temperature Coefficients
10
C, CAPACITANCE (pF)
1.0
-0.1 -1.0-1.0 -10 -100 -1000
-10 -100
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
C
ob
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3
BC808−25LT1G, BC808−40LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
A
A1
D
H
SEE VIEW C
E
0.25
3
E
12
b
e
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
STYLE 6:
PIN 1. BASE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
E
2. EMITTER
3. COLLECTOR
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
ǒ
SCALE 10:1
inches
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
BC808−25LT1/D
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