LG BC808-25LT1G, BC808-40LT1G Service Manual

BC808-25LT1G,

BC808-40LT1G

General Purpose

Transistors

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Collector − Emitter Voltage	VCEO	−25	V
Collector − Base Voltage	VCBO	−30	V
Emitter − Base Voltage	VEBO	−5.0	V
Collector Current − Continuous	IC	−500	mAdc
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR−5 Board,	PD
(Note 1) TA = 25°C		225	mW
Derate above 25°C		1.8	mW/°C
Thermal Resistance,	RqJA	556	°C/W
Junction−to−Ambient
Total Device Dissipation Alumina	PD
Substrate, (Note 2)
TA = 25°C		300	mW
Derate above 25°C		2.4	mW/°C
Thermal Resistance,	RqJA	417	°C/W
Junction−to−Ambient
Junction and Storage Temperature	TJ, Tstg	−55 to +150	°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1.FR−5 = 1.0 x 0.75 x 0.062 in.

2.Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

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COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

5x M G

G

1

5x = Device Code

x = F or G

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary depending upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

♥ Semiconductor Components Industries, LLC, 2009	1	Publication Order Number:
August, 2009 − Rev. 2		BC808−25LT1/D

BC808−25LT1G, BC808−40LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage		V(BR)CEO	−25	−	−	V
(IC = −10 mA)
Collector−Emitter Breakdown Voltage		V(BR)CES	−30	−	−	V
(VEB = 0, IC = −10 mA)
Emitter−Base Breakdown Voltage		V(BR)EBO	−5.0	−	−	V
(IE = −1.0 mA)
Collector Cutoff Current		ICBO				nA
(VCB = −20 V)			−	−	−100
(VCB = −20 V, TJ = 150°C)			−	−	−5.0	mA
ON CHARACTERISTICS
DC Current Gain		hFE				−
(IC = −100 mA, VCE = −1.0 V)	BC808−25		160	−	400
	BC808−40		250	−	600
(IC = −500 mA, VCE = −1.0 V)			40	−	−
Collector−Emitter Saturation Voltage		VCE(sat)	−	−	−0.7	V
(IC = −500 mA, IB = −50 mA)
Base−Emitter On Voltage		VBE(on)	−	−	−1.2	V
(IC = −500 mA, IB = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product		fT	100	−	−	MHz
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance		Cobo	−	10	−0.7	pF
(VCB = −10 V, f = 1.0 MHz)

ORDERING INFORMATION

Device	Specific Marking	Package	Shipping†
BC808−25LT1G	5F	SOT−23	3000/Tape & Reel
		(Pb−Free)
BC808−40LT1G	5G	SOT−23	3000/Tape & Reel
		(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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2