TP0610L/T, VP0610L/T, BS250
V
Continuous Drain Current
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V
TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18
TP0610T −60 10 @ VGS = −10 V −1 to −2.4 −0.12
VP0610L −60 10 @ VGS = −10 V −1 to −3.5 −0.18
VP0610T −60 10 @ VGS = −10 V −1 to −3.5 −0.12
BS250 −45 14 @ VGS = −10 V −1 to −3.5 −0.18
FEATURES BENEFITS APPLICATIONS
D High-Side Switching
D Low On-Resistance: 8 W
D Low Threshold: −1.9 V
D Fast Switching Speed: 16 ns
D Low Input Capacitance: 15 pF
(BR)DSS
Min (V)
r
Max (W)
DS(on)
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
V
(V) ID (A)
GS(th)
D Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories,
Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-92-18RM
(TO-18 Lead Form)
D
G
S
1
2
3
Top View
BS250TP0610L
Device Marking
Front View
BS250
“S” BS
250
xxll
“S” = Siliconix Logo
xxll = Date Code
TO-236
(SOT-23)
G
1
S
2
Top View
TP0610T
VP0610T
S
G
D
TO-226AA
(TO-92)
1
2
3
Top View
VP0610L
Device Marking
Device Marking
Front View
Front View
TP0610L
“S” TP
0610L
xxll
VP0610L
“S” VP
0610L
xxll
“S” = Siliconix Logo
xxll = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
a
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
I
I
DM
P
thJA
DS
GS
D
D
stg
−60 −60 −60 −60 −45
"30 "30 "30 "30 "25
−0.18 −0.12 −0.18 −0.12 −0.18
−0.11 −0.07 −0.11 −0.07
−0.8 −0.4 −0.8 −0.4
0.8 0.36 0.8 0.36 0.83
0.32 0.14 0.32 0.14
156 350 156 350 150
−55 to 150
Marking Code:
D
3
TP0610T: TOwll
VP0610T: VOwll
w = Week Code
lL = Lot Traceability
A
W
_C/W
_C
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
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1
TP0610L/T, VP0610L/T, BS250
Drain Source
V
V
yg
GSS
Drain Current
DSS
m
Current
b
D(on)
Drain-Source
Forward
pF
VDD = 25 V, RL = 133 W
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions
Static
Typ
Limits
TP0610L/T VP0610L/T BS250
a
Min Max Min Max Min Max Unit
Drain-Source
Breakdown Voltage
Gate-Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain
b
Current
Drain-Source
On-Resistance
Forward
Transconductance
Diode Forward
Voltage
b
b
Dynamic
(BR)DSS
V
GS(th)
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
VGS = 0 V, ID = −10 mA
VGS = 0 V, ID = −100 mA
VDS = VGS, ID = −1 mA −1.9 −1 −2.4 −1 −3.5 −1 −3.5
VDS = 0 V, VGS = "20 V "10 "10
VDS = 0 V, VGS = "20 V, TJ = 125_C
VDS = 0 V, VGS = "15 V "20
VDS = −48 V, VGS = 0 V −1 −1
VDS = −48 V, VGS = 0 V, TJ = 125_C
VDS = −25 V, VGS = 0 V −0.5
VDS = −10 V, VGS = −4.5 V −180 −50
VDS = −10 V, VGS = −10 V
VGS = −4.5 V, ID = −25 mA 11 25
VGS = −10 V, ID = −0.5 A L Suffix 8 10 10
VGS = −10 V, ID = −0.5 A, TJ = 125_C
VGS = −10 V, ID = −0.2 A T Suffix 6.5 10 10 14
VDS = −10 V, ID = −0.5 A L Suffix 20 80
VDS = −10 V, ID = −0.1 A T Suffix 90 60 70
IS = −0.5 A, VGS = 0 V −1.1 V
L Suffix −750 −600
T Suffix −220
L Suffix 15 20 20
−70 −60 −60
"50
−200 −200
−45
V
nA
mA
mA
W
mS
Input Capacitance C
Output Capacitance C
Reverse Transfer
Capacitance
Switching
Turn-On Time t
Turn-Off Time t
Notes
a. For DESIGN AID ONLY, not subject to production testing. VPDS06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
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c
C
oss
rss
ON
OFF
iss
VDS = −25 V, VGS = 0 V
f = 1 MHz
VDD = −25 V, RL = 133 W
ID ^ −0.18 A, V
= −10 V, Rg = 25 W
GEN
2
15 60 60
10 25 25
3 5 5
8 10
8 10
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
pF
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
1.0
VGS = 10 V
0.8
0.6
0.4
− Drain Current (A)I
D
0.2
0.0
012345
8 V
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
20
Output Characteristics Transfer Characteristics
16
W )
12
VGS = 4.5 V
VGS = 5 V
7 V
6 V
5 V
4 V
1200
TJ = −55_C
900
600
− Drain Current (mA)I
D
300
0
0246810
− Gate-to-Source Voltage (V)
V
GS
GS
= 0 V
Capacitance
40
V
32
24
125_C
C
iss
25_C
8
− On-Resistance (r
DS(on)
4
0
0 200 400 600 800 1000
ID − Drain Current (mA)
15
ID = 500 mA
12
9
6
− Gate-to-Source Voltage (V)
GS
3
V
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8
Gate Charge
VDS = 30 V
Qg − Total Gate Charge (nC)
VGS = 10 V
VDS = 48 V
16
C − Capacitance (pF)
8
0
0 5 10 15 20 25
1.8
1.5
1.2
0.9
0.6
− On-Resiistance
(Normalized)
DS(on)
r
0.3
0.0
−50 −25 0 25 50 75 100 125 150
C
oss
C
rss
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V @ 500 mA
VGS = 4.5 V @ 25 mA
TJ − Junction Temperature (_C)
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
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3
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
VGS = 0 V
100
TJ = 125_C
10
− Source Current (A)I
S
TJ = 25_C
TJ = −55_C
1
0.00 0.3 0.6 0.9
VSD − Source-to-Drain Voltage (V)
Threshold Voltage Variance Over Temperature
0.5
Source-Drain Diode Forward Voltage
0.4
0.3
0.2
Variance (V)V
0.1
−0.0
GS(th)
−0.1
−0.2
ID = 250 mA
1.2 1.5
On-Resistance vs. Gate-Source Voltage
10
8
ID = 500 mA
W )
6
4
− On-Resistance (r
ID = 200 mA
2
DS(on)
0
0246810
VGS − Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
3
2.5
2
1.5
Power (W)
1
0.5
TA = 25_C
−0.3
−50 −25 0 25 50 75 100 125 150
0.1
Thermal Impedance
Normalized Effective Transient
0.01
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4
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
−4
10
T
− Junction Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
−3
10
0
0.01
1
10
100 6000.1
Time (sec)
Notes:
P
DM
t
1
t
2
t
thJA
t
thJA
100
1
2
(t)
= 350_C/W
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM − TA = PDMZ
4. Surface Mounted
−2
10
−1
1 10 60010
Square Wave Pulse Duration (sec)
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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