Krups CITIZ&MILK, XN730T10 Schematic
A2
A1
A2
D²PAK
TO-220AB
TO-220AB Ins.
A2
A1
G
G
A1
G
A2
A1
G
A2
A2
BTA12, BTB12, T1205
T1210, T1235, T1250
Datasheet
12 A Snubberless™, logic level and standard Triacs
Features
• Medium current Triac
• Low thermal resistance with clip bonding
• Low thermal resistance insulation ceramic for insulated BTA
• High commutation (4Q) or very high commutation (3Q) capability
• BTA series UL1557 certified (file ref: 81734)
• Packages are RoHS (2011/65/EU) compliant
Description
Available either in through-hole or surface mount packages, the BTA12, BTB12 and
T12xx Triac series are suitable for general purpose mains power AC switching. They
can be used as ON/OFF function in applications such as static relays, heating
regulation or induction motor starting circuit. They are also recommended for phase
control operations in light dimmers and appliance motors speed controllers.
The Snubberless™ versions (W suffix and T12xx) are especially recommended for
use on inductive loads, because of their high commutation performance. By using an
internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at
2500 V
Logic Level BTA12-600TW and BTA12-600SW offer low holding current, ideal to
design light dimmers for LED lamps.
) complying with UL standards (file reference: E81734).
RMS
Product status link
Product summary
I
T(RMS)
V
DRM/VRRM
IGT(Snubberless)
IGT(standard)
BTA12
BTB12
T1205
T1210
T1235
T1250
600 and 800 V
5 / 10 / 35 / 50 mA
25 / 50
12 A
DS2115 - Rev 12 - February 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1 Characteristics
Table 1. Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2t I2t value for fusing
dl/dt
V
DSM/VRSM
I
GM
P
G(AV)
T
T
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current (full cycle, T
initial = 25 °C)
Critical rate of rise of on-state current IG = 2 x IGT, tr ≤
100 ns
Non repetitive surge peak off-state voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range -40 to +150 °C
stg
Operating junction temperature range -40 to +125 °C
j
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics
TO-220AB, D²PAK
TO-220AB Ins.
f = 50 Hz t = 20 ms 120
j
f = 60 Hz
f = 120 Hz
tp = 10 ms Tj = 25 °C
tp = 20 µs Tj = 125 °C
Tc = 105 °C
Tc = 90 °C
tp = 16.7 ms
tp = 10 ms
Tj = 125 °C
Tj = 125 °C
12 A
126
78
50 A/µs
V
/ V
DRM
100
A2s
+
RRM
4 A
1 W
A
V
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ and logic level
(3 quadrants)
Symbol
(1)
IGT
Parameter Quadrant
VD = 12 V, RL = 30 Ω
V
GT
V
IH
IL
dV/dt
GD
(2)
(2)
(2)
VD = V
DRM
IT = 100 mA
IG = 1.2 x I
VD = 67% V
, RL = 3.3 kΩ, Tj = 125 °C
GT
, gate open, Tj = 125 °C
DRM
(dV/dt)c = 0.1 V/µs, Tj = 125 °C
(2)
(dl/dt)c
(dV/dt)c = 10 V/µs, Tj = 125 °C
Without snubber, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
T1205
BTB12-TW
BTA12-TW
T1210
BTB12-SW
BTA12-SW
T1235
BTB12-
CW
BTA12-CW
I - II - III Max. 5 10 35 50 mA
I - II - III Max. 1.3 V
I - II - III Min. 0.2 V
I - II - III Max. 10 15 35 50 mA
I - III Max. 10 25 50 70
II Max. 15 30 60 80
Max. 20 40 500 1000 V/µs
Min. 3.5 6.5
Min. 1.0 2.9
Min. 6.5 12
T1250
BTB12-
BW
BTA12-BW
A/ms
Unit
mA
DS2115 - Rev 12
page 2/16
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Standard Triac (4 quadrants)
Symbol Parameter Quadrant
Value
C B
(1)
IGT
V
GT
V
GD
(2)
IH
I
L
dV/dt
(dV/dt)c
VD = 12 V, RL = 30 Ω
VD = V
, RL = 33 kΩ, Tj = 125 °C
DRM
IT = 500 mA
IG = 1.2 I
(2)
VD = 67 % V
(2)
(dI/dt)c = 5.3 A/ms, Tj = 125 °C
GT
DRM
gate open, Tj = 125 °C
I - II - III
IV 50 100
Max.
All Max. 1.3 V
All Min. 0.2 V
I - II - III Max. 25 50 mA
I - III - IV
II 80 100
Max.
Min. 200 400 V/µs
Min. 5 10 V/µs
25 50
40 50
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Table 4. Static electrical characteristics
Symbol Test conditions Value Unit
(1)
VTM
(1)
V
TO
(1)
R
D
I
DRM IRRM
1. For both polarities of A2 referenced to A1
ITM = 17 A, tp = 380 µs Tj = 25 °C
threshold on-state voltage
Dynamic resistance
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
V
= V
DRM
RRM
Tj = 125 °C
Max. 1.55 V
Max. 0.85 V
Max. 35 mΩ
Max. 5 µA
Max. 1 mA
Unit
mA
mA
Symbol
R
R
1. S = Copper surface under tab.
Max. junction to case thermal resistance (AC)
th(j-c)
Junction to ambient
th(j-a)
Junction to ambient TO-220AB / TO-220AB insulated Typ. 60
Table 5. Thermal resistance
Parameter Value Unit
Max. 1.4
S = 2 cm²
D2PAK / TO-220AB
TO-220AB insulated Max. 2.3
(1)
D²PAK Typ. 45
°C/W
°C/W
DS2115 - Rev 12
page 3/16
1.1 Characteristics (curves)
16
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10 11 12
P(W)
I
T(RMS)
(A)
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125
T ( °C)
C
BTA
BTB /T12
I
T(RMS)
(A)
0 2 5 5 0 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T (°C )
C
D PAK
(S = 1cm )
2
2
I
T(RMS)
(A)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-2
1E-1
1E+0
K = [Z /R
th th
]
tP( s)
Z
th(j-c)
Z
th(j-a)
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
Figure 3. RMS on-state current versus ambient
temperature (printed circuit board FR4, copper thickness:
35 μm) (full cycle)
Figure 2. RMS on-state current versus case temperature
(full cycle)
Figure 4. Relative variation of thermal impedance versus
pulse duration
DS2115 - Rev 12
page 4/16
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
I (A)
TM
V (V)
TM
T max.
V = 0.85V
R = 35 m
j
to
d
Ω
T =jT max.
j
T = 25°Cj.
1
10 100 1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
Numb er o f cycles
t=20ms
One cy cle
Non repetitive
T i nitial= 25°C
j
Repetitive
T = 90°C
C
I
TSM
(A)
0.01 0.10 1.00 10.00
10
100
1000
T initial = 25°C
j
I
TSM
dI/dt limitation:
50A/µs
I
TSM
(A)
tP(ms)
for a sinusoidal pulse with width t
P <
10 ms
-40 -20 0 2 0 40 60 8 0 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
I
GT
IH& I
L
Tj(°C)
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C]
BTA12, BTB12, T1205, T1210, T1235, T1250
Characteristics (curves)
Figure 5. On-state characteristics (maximum values)
Figure 7. Non repetitive surge peak on-state current for a
sinusoidal pulse
Figure 6. Surge peak on-state current versus number of
cycles
Figure 8. Relative variation of gate trigger current holding
current and latching current versus junction temperature
(typical values)
DS2115 - Rev 12
page 5/16
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