TRANSMITTING POWER AMPLIFIER
GaAs MMIC
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GENERAL DESCRIPTION
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PACKAGE OUTLINE
NJG1309VB2 is a positive voltage supply type GaAs power
amplifier MMIC designed for Digital Cordless Phone.
Gate bias and Gain control bias terminals are supplied
by positive voltage.
These terminals have high-impedance characteristics.
NJG1309VB2 can reduce power
consumption at receiving mode by “Standby Function”.
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FEATURES
lOperating frequency range f=1.9GHz typ.
lPositive voltage supply V
DD2,3
=+3.0V typ. +VGG=+1.0V typ.
lLow current consumption 150mA typ. @21dBm output power
lHigh gain 37dB typ. @21dBm output power
lGain control range 26dB typ. @21dBm output power
lPackage SSOP20-B2 (Pin pitch 0.5mm)
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PIN CONFIGURATION
CR
Oscillator
DC/DC
Converter
20
19
18
17
16
15
14
13
12
11
1
2
3
4
5
6
7
8
9
10
V Type
(Top View)
Pin Connection
1.V
STB
11.RF
out
2.+V
GG
12.GND
3.-V
GG1
13.V
DD3
4.GND 14.GND
5.RF
in
15V
DD2
6.GND 16.GND
7.GND 17.GND
8.-V
GG2
18.-V
CONT
9.GND 19.+V
CONT
10.GND 20.V
DD1
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ABSOLUTE MAXIMUM RATINGS
(Zs=Zl=50Ω, Ta=25°C)
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ELECTRICAL CHARACTERISTICS 1
(V
DD1
=3V,V
STB
=2.7V, +V
CONT
=0V, f=1.9GHz, Zs=Zl=50Ω, Ta=25°C)
PARAMETER SYMBOL CONDITIONS RATINGS UNITS
Drain Voltage 1 V
DD1
+VGG=1.0V 5.5 V
Drain Voltage 2 V
DD2,3
+VGG=1.0V 6.0 V
Gate Voltage +V
GG
V
DD2,3
=3.0V -0.5~V
+0.5 V
Gain Control Voltage +V
CONT
V
DD2,3
=3.0V -0.5~V
+0.5 V
Standby Voltage V
STB
-0.5~V
+0.5 V
Input Power P
in
V
DD2,3
=3.0V, +VGG=1.0V 3.0 dBm
Power Dissipation P
D
At on PCB board 600 mW
Operating Temperature T
opr
-40~+85 °C
Storage Temperature T
stg
-55~+150 °C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq V
DD2,3
=3.0V 1.85 1.90 1.95 GHz
Drain Voltage 1 V
DD1
2.7 3.0 5.2 V
Drain Voltage 2 V
DD2,3
2.9 3.0 5.2 V
Standby Terminal
Input Voltage (H)
V
STB
(H) 2.4 2.7 3.0 V
Standby Terminal
Input Voltage (L)
V
STB
(L) 0.0 0.0 0.6 V
Gain Control Voltage +V
CONT
0.0 - 2.0 V
Gate Voltage +V
GG
V
DD2,3
=3.0V, I
idle
=130mA 0.6 1.0 1.4 V
Idle Current *1 I
idle
V
DD2,3
=3.0V, RF OFF 125 130 135 mA
Operating Current *1 I
DD2,3
V
DD2,3
=3.0V,I
idle
=130mA
P
out
=21dBm
- 150 165 mA
V
DD1
Terminal Current(H) I
DD1
(H) V
DD2,3
=3V,P
out
=21dBm - 0.9 1.25 mA
V
DD1
Terminal Current(L) I
DD1
(L) V
STB
=0V,V
DD2,3
=0V - 0.5 1.0 uA
V
GG1
Terminal Current I
GG
+VGG=2.0V - 5 10 uA
+V
CONT
Terminal Current I
CONT
+V
CONT
=2.0V - 5 10 uA
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ELECTRICAL CHARACTERISTICS 1
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.9GHz, Zs=Zl=50Ω, Ta=25°C)
*1: Total current of V
DD2
terminal and V
DD3
terminal.
*2: Timing chart of input terminal voltage is mentioned in the separate sheet of paper.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
V
STB
Terminal Current I
STB
- 0.5 1.0 uA
-VGG,-V
CONT
Rise Time*2 TRDD 0.01uF Load Capacitance - - 400 uSEC
-VGG,-V
CONT
Fall Time*2 T
STB
- - 20 mSEC
+VGG Terminal Input
Resistance
R1 300 500 700 kΩ
+V
CONT
Terminal Input
Resistance
R2 300 500 700 kΩ
Power Gain Gain
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
34 37 40 dB
Gain Flatness G
flat
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
- 1.0 1.5 dB
Gain Control Range G
cont
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
+V
CONT
=0.0 to 2.0V
21 26 31 dB
Pout at 1dB Gain
Compression point
P
-1dB
V
DD2,3
=3.0V, I
idle
=130mA - 21 - dBm
Harmonics P
hm
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
- -40 -30 dBc
Load VSWR tolerance -
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm,
Load VSWR=1:4 All Phase
Parasitic oscillation
for fundamental signal
level: -60dBc
-
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ELECTRICAL CHARACTERISTICS 2
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.765GHz, Zs=Zl=50Ω, Ta=25°C)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating frequency freq V
DD2,3
=3.0V 1.750 1.765 1.780 GHz
Drain Voltage 1 V
DD1
2.7 3.0 5.2 V
Drain Voltage 2 V
DD2,3
2.9 3.0 5.2 V
Standby Terminal
Input Voltage (H)
V
STB
(H) 2.4 2.7 3.0 V
Standby Terminal
Input Voltage (L)
V
STB
(L) 0.0 0.0 0.6 V
Gain Control Voltage +V
CONT
0.0 - 2.0 V
Gate Voltage +V
GG
V
DD2,3
=3.0V, I
idle
=130mA 0.6 1.0 1.4 V
Idle Current *1 I
idle
V
DD2,3
=3.0V, RF OFF 125 130 135 mA
Operating Current *1 I
DD2,3
V
DD2,3
=3.0V,I
idle
=130mA
P
out
=21dBm
- 155 - mA
V
DD1
Terminal Current(H) I
DD1
(H) V
DD2,3
=3V,P
out
=21dBm - 0.9 - mA
V
DD1
Terminal Current(L) I
DD1
(L) V
STB
=0V,V
DD2,3
=0V - 0.5 - uA
VGG Terminal Current I
GG
+VGG=2.0V - 5 - uA
+V
CONT
Terminal Current I
CONT
+V
CONT
=2.0V - 5 - uA
V
STB
Terminal Current I
STB
- 0.5 - uA
-VGG,-V
CONT
Rise Time*2 TRDD 0.01uF Load Capacitance - - 400 uSEC
-VGG,-V
CONT
Fall Time*2 T
STB
- - 20 mSEC
+VGG Terminal Input
Resistance
R1 300 500 700 kΩ
+V
CONT
Terminal Input
Resistance
R2 300 500 700 kΩ
Power Gain Gain
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
- 36 - dB
Gain Flatness G
flat
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
- 0.5 - dB
Gain Control Range G
cont
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
+V
CONT
=0.0 to 2.0V
- 25 - dB
Output Power at
1dB Compression point
P
-1dB
V
DD2,3
=3.0V, I
idle
=130mA - 20 - dBm
Harmonics P
hm
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm
- -40 - dBc
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ELECTRICAL CHARACTERISTICS 2
(V
DD1
=3V, V
STB
=2.7V, +V
CONT
=0V, f=1.765GHz, Zs=Zl=50Ω, Ta=25°C)
*1:Total current of V
DD2
terminal and V
DD3
terminal.
*2:Timing chart of input terminal voltage is mentioned in the separate sheet of paper.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Load VSWR tolerance -
V
DD2,3
=3.0V, I
idle
=130mA
P
out
=21dBm,
Load VSWR=1:4 All Phase
Parasitic oscillation
for fundamental signal
level: -60dBc
-
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TIMING CHART
1) Timing chart of setting and shut of supply voltage and control voltage, V
DD1
, +V
GG
,and V
CONT
.
Notes
(1) To prevent latch-up, V
DD1
should be more than V
STB
,+VGG and +V
CONT
.
(2) The rising time of VDD1 is 400uSEC.maximum in case of the recommended circuit.