IXYS MDD255-22N1, MDD255-14N1, MDD255-16N1, MDD255-18N1, MDD255-20N1 Datasheet
...
MDD 255
High Power
Diode Modules
V
RSM
V
DSM
VV
1300 1200 MDD 255-12N1
1500 1400 MDD 255-14N1
1700 1600 MDD 255-16N1
1900 1800 MDD 255-18N1
2100 2000 MDD 255-20N1
2300 2200 MDD 255-22N1
Symbol Test Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
2
dt TVJ = 45°C t = 10 ms (50 Hz) 451 000 A2s
òi
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws 750 g
Symbol Test Conditions Characteristic Values
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a Maximum allowable acceleration 50 m/s
V
RRM
V
DRM
TVJ = T
TC = 100°C; 180° sine 270 A
VJM
Type
312
450 A
TVJ = 45°C; t = 10 ms (50 Hz) 9500 A
VR = 0 t = 8.3 ms (60 Hz) 10200 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 9000 A
t = 10 ms (50 Hz) 8400 A
VR = 0 t = 8.3 ms (60 Hz) 437 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 340 000 A2s
t = 10 ms (50 Hz) 353 000 A2s
-40...+150 °C
150 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
TVJ= T
; VR = V
VJM
RRM
30 mA
IF = 600 A; TVJ = 25°C1.4V
For power-loss calculations only 0.8 V
TVJ = T
VJM
0.6 mW
per diode; DC current 0.140 K/W
per module other values 0.07 K/W
per diode; DC current see MCC 255 0.18 K/W
per module 0.09 K/W
TVJ = 125°C; IF = 400 A; -di/dt = 50 A/ms 700 mC
260 A
Creeping distance on surface 12.7 mm
Creepage distance in air 9.6 mm
I
FRMS
I
FAVM
V
= 2x 450 A
= 2x 270 A
= 1200-2200 V
RRM
2
1
3
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
M8x20
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
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1 - 3
MDD 255
10000
I
FSM
A
8000
6000
4000
2000
0
0.001 0.01 0.1 1
Fig. 1 Surge overload current
I
: Crest value, t: duration
FSM
500
P
tot
W
400
300
200
100
50 Hz
80 % V
RRM
TVJ = 45°C
T
= 150°C
VJ
s
DC
180° sin
120°
60°
30°
6
10
VR = 0V
I2t
A2s
= 45°C
T
VJ
TVJ = 150°C
5
10
t
110
ms
t
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
500
A
450
I
FAVM
400
350
300
250
200
150
100
50
0
0 25 50 75 100 125 150
DC
180° sin
120°
60°
30°
T
C
°C
at case temperature
R
0.1
0.2
0.3
0.4
0.6
0.8
1.2
thKA
K/W
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
0
0 100 200 300 400
1500
P
tot
W
1250
1000
750
500
250
0
0 100 200 300 400 500
I
FAVM
R
Circuit
B2U
2 x MDD255
0 25 50 75 100 125 150
A °C
T
A
R
K/W
thKA
0.06
L
0.08
0.1
0.15
0.2
0.3
0.5
A
0 255075100125150
I
dAVM
°C
T
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
A
© 2000 IXYS All rights reserved
808
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