IXYS MDD172-18N1, MDD172-08N1, MDD172-12N1, MDD172-14N1, MDD172-16N1 Datasheet
MDD 172
High Power
Diode Modules
V
RSM
V
RRM
Type
VV
900 800 MDD 172-08N1
1300 1200 MDD 172-12N1
1500 1400 MDD 172-14N1
1700 1600 MDD 172-16N1
1900 1800 MDD 172-18N1
Symbol Test Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
TVJ = T
VJM
TC = 100°C; 180° sine 190 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 6600 A
VR = 0 t = 8.3 ms (60 Hz), sine 7290 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 6200 A
t = 10 ms (50 Hz), sine 5600 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 218 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 221 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 160 000 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in.
t = 10 ms (50 Hz), sine 157 000 A2s
Weight Typical including screws 120 g
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 50 m/s
TVJ= T
IF = 300 A; TVJ = 25°C 1.15 V
For power-loss calculations only 0.8 V
TVJ = T
TVJ = 125°C; IF = 300 A, -di/dt = 50 A/ms 550 mC
per diode; DC current 0.21 K/W
per module other values 0.105 K/W
per diode; DC current see Fig. 6/7 0.31 K/W
per module 0.155 K/W
Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm
VJM
VJM
; VR = V
RRM
312
300 A
-40...+150 °C
150 °C
-40...+125 °C
20 mA
0.8 mW
235 A
I
FRMS
I
FAVM
V
= 2x 300 A
= 2x 190 A
= 800-1800 V
RRM
1
3
2
Features
●
International standard package
●
Direct copper bonded Al2O3 -ceramic
base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered, E 72873
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 3
MDD 172
Fig. 1 Surge overload current
I
: Crest value, t: duration
FSM
Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
2 - 3
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