IXYS IXFE55N50, IXFE50N50 Datasheet

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

Power MOSFET

IXFE 55N50 500 V 52 A 80 m
IXFE 50N50 500 V 47 A 100 m

t

Single Die MOSFET

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

V

ISOL

M

Weight 19 g

TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C, RGS = 1MΩ 500 V

Continuous ±20 V
Transient ±30 V

TC = 25°C 55N50 47 A

50N50 53 A

TC = 25°C; Note 1 55N50 200 A

50N50 220 A

TC = 25°C 55 A

TC= 25°C 60 mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

≤ 150°C, RG = 2 Ω

T

J

TC = 25°C 500 W

50/60 Hz, RMS t = 1 min 2500 V~

≤ 1 mA t = 1 s 3000 V~

I

ISOL

Mounting torque 1.5/13 Nm/lb.in.

d

Terminal connection torque 1.5/13 Nm/lb.in.

DSS

-55 ... +150 °C
150 °C

-55 ... +150 °C

5 V/ns

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

≤ ≤

≤ 250 ns

≤ ≤

rr

ISOPLUS 227

G = Gate D = Drain
S = Source

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

TM

G

(IXFE)

S

S

D

• Low cost direct-copper bonded

aluminium package

• Encapsulating epoxy meets

UL

94 V-0, flammability classification

• 2500V isolation

• Low drain to case capacitance

• Low R

HDMOSTM process

DS (on)

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

• Conforms to SOT-227B outline

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2002 IXYS All rights reserved

VGS= 0 V, ID = 3mA 500 V

VDS= VGS, ID = 8mA 2.5 4.5 V

VGS= ±20V, VGS = 0V ±100 nA

VDS= V

DSS

= 0 V TJ = 125°C 2 mA

V

GS

VGS= 10V, ID = I
Note 2 50N50 100 m Ω

T

TJ = 25°C 400 µA

55N50 80 m Ω

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

98904 (2/02)

IXFE 55N50
IXFE 50N50

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = IT, Note 2 45 S

9400 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 1200 pF

460 pF

45 ns

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

60 ns

RG= 1 Ω (External), 120 ns

45 ns

330 nC

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

55 nC

185 nC

0.25 K/W

0.07 K/W

ISOPLUS-227 B

Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.

I

S

VGS= 0 55N50 55 A

50N50 50 A

I

SM

V

SD

Repetitive; 55N50 220 A
pulse width limited by T

JM

50N50 200 A

IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

Q

RM

I

RM

Notes: 1. Pulse width limited by T

IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C 180 n s

T

= 25°C 30 ns

J

TJ = 25°C 2 µC

8 A

JM.

2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.

3. I

Test current:

T

IXFE55N50: I
IXFE50N50: IT = 25 A

= 27.5 A

T

Please see IXFN55N50 data sheet
for characteristic curves.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025