HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFET
IXFE 55N50 500 V 52 A 80 m
IXFE 50N50 500 V 47 A 100 m
t
Single Die MOSFET
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
Weight 19 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C, RGS = 1MΩ 500 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 55N50 47 A
50N50 53 A
TC = 25°C; Note 1 55N50 200 A
50N50 220 A
TC = 25°C 55 A
TC= 25°C 60 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
T
J
TC = 25°C 500 W
50/60 Hz, RMS t = 1 min 2500 V~
≤ 1 mA t = 1 s 3000 V~
I
ISOL
Mounting torque 1.5/13 Nm/lb.in.
d
Terminal connection torque 1.5/13 Nm/lb.in.
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
5 V/ns
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
≤ ≤
≤ 250 ns
≤ ≤
rr
ISOPLUS 227
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
TM
G
(IXFE)
S
S
D
• Low cost direct-copper bonded
aluminium package
• Encapsulating epoxy meets
UL
94 V-0, flammability classification
• 2500V isolation
• Low drain to case capacitance
• Low R
HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
• Conforms to SOT-227B outline
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2002 IXYS All rights reserved
VGS= 0 V, ID = 3mA 500 V
VDS= VGS, ID = 8mA 2.5 4.5 V
VGS= ±20V, VGS = 0V ±100 nA
VDS= V
DSS
= 0 V TJ = 125°C 2 mA
V
GS
VGS= 10V, ID = I
Note 2 50N50 100 m Ω
T
TJ = 25°C 400 µA
55N50 80 m Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
98904 (2/02)
IXFE 55N50
IXFE 50N50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = IT, Note 2 45 S
9400 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 1200 pF
460 pF
45 ns
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = I
T
60 ns
RG= 1 Ω (External), 120 ns
45 ns
330 nC
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = I
T
55 nC
185 nC
0.25 K/W
0.07 K/W
ISOPLUS-227 B
Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
I
S
VGS= 0 55N50 55 A
50N50 50 A
I
SM
V
SD
Repetitive; 55N50 220 A
pulse width limited by T
JM
50N50 200 A
IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
Notes: 1. Pulse width limited by T
IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C 180 n s
T
= 25°C 30 ns
J
TJ = 25°C 2 µC
8 A
JM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. I
Test current:
T
IXFE55N50: I
IXFE50N50: IT = 25 A
= 27.5 A
T
Please see IXFN55N50 data sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025