IXYS IXFE44N60 Datasheet
HiPerFET
TM
IXFE 44N60 V
DSS
= 600 V
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight 19 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C41A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C44A
C
T
= 25°C60mJ
C
T
= 25°C3J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 500 W
C
1.6 mm (0.63 in) from case for 10 s - °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
VGS= 0 V, ID = 3 mA 600 V
VDS= VGS, ID = 8 mA 2.5 4.5 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
VGS= 10 V, ID = I
DSS
, V
= 0 ±200 nA
DC
DS
T
Note1 130 mΩ
rr
JM
, 5 V/ns
DSS
G
S
176 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
(T
= 25°C, unless otherwise specified)
J
T
= 25°C 100 µA
J
= 125°C2mA
J
min. typ. max.
D
S
I
D25
R
DS(on)
trr
ISOPLUS 227
= 41 A
= 130 m
≤ ≤
≤ 250 ns
≤ ≤
TM
(IXFE)
S
G
D
S
ΩΩ
Ω
ΩΩ
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R
HDMOSTM process
DS (on)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Low cost
•Easy to mount
•Space savings
•High power density
© 2002 IXYS All rights reserved
98894 (1/02)
IXFE 44N60
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS = 10 V; ID = IT, Note:1 30 45 S
VGS = 0 V, VDS = 25 V , f = 1 MH z 1000 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
RG = 1 Ω (External), 110 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
min. typ. max.
T
T
8900 pF
330 pF
42 ns
55 ns
45 ns
330 nC
60 nC
65 nC
0.25 K/W
0.07 K/W
ISOPLUS-227 B
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 44 A
Repetitive; 176 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.3 V
Note:1
t
rr
Q
RM
I
RM
IF = 50A, -di/dt = 100 A/µs, VR = 100 V 250 ns
1.4 µC
8A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. Test current I
= 22A
T
Please see IXFN44N60 data sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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