IXYS IXFE48N50QD3, IXFE48N50QD2, IXFE44N50QD3, IXFE44N50QD2 Datasheet

HiPerFET

TM

V

DSS

I

D (cont)

R

DS(on)

t

rr

Power MOSFETs

IXFE44N50QD2 IXFE44N50QD3
IXFE48N50QD2 IXFE48N50QD3

Buck & Boost Configurations for

3

PFC & Motor Control Circuits

Preliminary data sheet

2

1

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt IS ≤ IDM, -di/dt ≤ 100 A/µs, VDD ≤ V

P

D

V

RRM

I

FAVM

I

DI ODE HiPerFET MOSFET

FRM

P

D

T

J

T

JM

T

stg

V

ISOL

CASE

M

T

= 25°C to 150°C 500 V

J

T

= 25°C to 150°C; RGS = 1 MΩ 500 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C 44N50Q 39 A

C

T

= 25°C, 44N50Q 176 A

C

pulse width limited by max. T

T

= 25°C48A

C

T

= 25°C60mJ

C

T

= 25°C 2.5 J

C

T

≤150°C, RG = 2 Ω

J

T

= 25°C 400 W

C

T

= 70 °C; rectangular, d = 0.5 60 A

C

tp <10 µs; pulse width limited by T

T

= 25°C 180 W

C

48N50Q 41 A

48N50Q 192 A

JM

, 5 V/ns

DSS

J

800 A

-40 ... +150 °C

-40 ... +150 °C

50/60 Hz, RMS t = 1 min 2500 V~
I

≤ 1 mA t = 1 s 3000 V~

ISOL

d

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

600 V

150 °C

500 V 39 A 0.12 Ω 35 ns
500 V 41A 0.11 Ω 35 ns

3

4

2

1

ISOPLUS 227TM(IXFE)

2

2 = Gate 3 = Drain
1 = Source 4 = Anode/Cathode

Features

• Popular Buck & Boost circuit

topologies

• Conforms to SOT-227B outline

• Isolation voltage 3000 V~

• Low R

HDMOSTM process

DS (on)

• Rugged polysilicon gate cell structure

• Low drain-to-case capacitance

(<60 pF)

- reduced RFI

• Ultra-fast FRED diode with soft

reverse recovery

Applications

• Power factor controls and buck

regulators

• DC servo and robotic drives

• DC choppers

• Switch reluctance motor controls

1

4

3

4

Weight 19 g

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2002 IXYS All rights reserved

Advantages

• Easy to mount with 2 screws

• Space savings

• Tightly coupled FRED

98903A (4/02)

IXFE44N50QD2 IXFE48N50QD2
IXFE44N50QD3 IXFE48N50QD3

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V
V

I
I

R

DSS
GS(th)

GSS

DSS

DS(on)

J

VGS= 0 V, ID = 1 mA 500 V
VDS= VGS, ID = 4 mA 2 4 V

V

= ±20 V

GS

VDS= V
VGS= 0 V T

VGS= 10 V, I

DSS

, V

= 0 ±100 nA

DC

DS

T

= 25°C 100 µA

J

= 125°C2mA

J

D

= I

T

44N50Q 0.12 Ω
48N50Q 0.11 Ω

min. typ. max.

Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2 %

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss
oss
rss

d(on)

r
d(off)
f

g(on)
gs
gd

thJC

thCK

J

VDS= 10 V, I

= I

, pulse test 30 45 S

D

T

VGS= 0 V, VDS = 25 V, f = 1 MHz 930 pF

VGS= 10 V, VDS = 0.5 V
R

= 1Ω (External) 75 ns

G

VGS= 10 V, VDS = 0.5 V

DSS

DSS

, I

= I

D

, I

= I

D

min. typ. max.

T

T

6400 pF

220 pF

33 ns
22 ns

10 ns

190 nC

40 nC
86 nC

0.31 K/W

0.07 K/W

ISOPLUS-227 B

Ultra-fast Diode Characteristic Values

(T

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

R

V

F

T

= 25°C; V

J

T

= 150°C; V

J

= V

R

= 0.8V

R

RRM

RRM

IF = 60A, VGS = 0 V 2.05 V

Note1 T

t

rr

I

RM

R

thJC

R

thJK

I

= 1A, di/dt = -200 A/µs, V

I

I

= 60A, di/dt = -100 A/µs, V

F

= 30 V, T

R

= 100 V, T

R

J

200 µA

2.5 mA

= 150°C 1.4 V

J

= 25°C3550ns

J

= 100°C 8.3 A

J

0.7 K/W

0.05 K/W

Please see IXFN48N50U2/U3 for
characteristic curves.

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

2. IXFE44N50 I

IXFE48N50 I

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

= 22A

T

= 24A

T

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025