IXYS IXFE44N50Q, IXFE48N50Q Datasheet

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

Power MOSFETs
Q-Class

N-Channel Enhancement Mode
Avalanche Rated, Low Q

High dv/dt

g,

IXFE 44N50Q 500 V 39 A 120 m
IXFE 48N50Q 500 V 41 A 1 10 m

trr

Preliminary data sheet

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

P

D

T

J

T

JM

T

stg

V

ISOL

M

d

Weight 19 g

Symbol Test Conditions Characteristic Values

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 44N50Q 39 A

48N50Q 41 A

TC= 25°C, pulse width limited by TJM44N50Q 176 A

48N50Q 192 A

TC= 25°C48A
TC= 25°C 60mJ

2.5 mJ

, 5 V/ns

T

≤ 150°C, RG = 2 Ω

J

TC= 25°C 400 W

50/60 Hz, RMS t = 1 min 2500 V~
I

≤ 1 mA t = 1 s 3000 V~

ISOL

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.

VGS= 0 V, ID = 1 mA 500 V
VDS= VGS, ID = 4 mA 2.0 4.0 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V

VGS= 0 V TJ = 125°C2mA
VGS= 10 V, ID = I

Notes 1, 2

DSS

T

DSS

-40 to +150 °C
150 °C

-40 to +150 °C

(TJ = 25°C, unless otherwise specified)

min. typ. max.

TJ = 25°C 100 µA

44N50Q 120 mΩ
48N50Q 110 mΩ

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

≤ ≤

≤ 250 ns

≤ ≤

ISOPLUS 227

G = Gate D = Drain
S = Source

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

TM

G

(IXFE)

S

S

D

•Conforms to SOT-227B outline

•Low R

HDMOSTM process

DS (on)

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

•DC-DC converters

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

Advantages

•Low cost

•Easy to mount

•Space savings

•High power density

© 2002 IXYS All rights reserved

98895 (4/02)

IXFE 44N50Q
IXFE 48N50Q

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 20 V; ID = IT, Notes 1, 2 30 45 S

6400 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 930 pF

220 pF

33 ns

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

22 ns

RG = 4.7 Ω (External), 75 ns

10 ns

190 nC

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

40 nC
86 nC

0.31 K/W

0.07 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISOPLUS-227 B

I

S

I

SM

V

SD

t

rr

Q

RM

I

RM

VGS= 0 V 48 A
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V

Note:1

IF = IS, -di/dt = 100 A/µs, VR = 100 V 1.4 µC

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Test current:

2. I

T

44N50Q: IT = 22A
48N50Q: IT = 24A

JM

192 A

250 ns

10 A

Please see IXFN48N50Q data
sheet for characteristic curves.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025