IXYS IXFE39N90 Datasheet
ADV ANCE TECHNICAL INFORMA TION
HiPerFET
TM
IXFE 39N90 V
Power MOSFETs
Single Die MOSFET
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
T
= 25°C to 150°C 900 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 900 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C, Chip capability 34 A
C
T
= 25°C, Note 1 154 A
C
T
= 25°C39A
C
T
= 25°C64mJ
C
T
= 25°C4J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C580W
C
DSS
-40 ... +150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 19 g
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
GSS
DSS
DSS
GH(th)
DS(on)
J
VGS= 0 V, ID = 3 mA 900 V
VDS= VGS, ID = 8 mA 2.5 5.0 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
VGS= 10 V, I
DSS
, V
= 0 ±200 nA
DC
DS
T
= 25°C 100 µA
J
= 125°C2mA
J
= I
D
T
min. typ. max.
Notes 2, 3
G
S
S
5 V/ns
150 °C
-40 ... +150 °C
220 mΩ
= 900 V
= 34 A
= 220 m
ΩΩ
Ω
ΩΩ
I
D25
R
DSS
DS(on)
t < ns
ISOPLUS 227
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Conforms to SOT-227B outline
•Low R
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Low cost
•Easy to mount
•Space savings
•High power density
TM
(IXFE)
G
HDMOSTM process
DS (on)
S
S
D
© 2002 IXYS All rights reserved
98920 (6/02)
IXFE 39N90
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS = 15 V; ID = IT, Note 2 30 45 S
VGS = 0 V, VDS = 25 V , f = 1 MH z 1230 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
RG = 1 Ω (External), 125 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
min. typ. max.
13400 pF
T
T
320 pF
45 ns
68 ns
30 ns
375 nC
75 nC
190 nC
0.22 K/W
0.07 K/W
ISOPLUS-227 B
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 39 A
Repetitive; 154 A
Note 1
IF = IS, VGS = 0 V, 1.3 V
Note 2
t
rr
Q
RM
I
RM
Notes: 1. Pulse width limited by T
IF = 25A, -di/dt = 100 A/µs, VR = 100 V 250 ns
2 µC
9A
JM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. I
Test current: IT = 19.5 A
T
Please see IXFN80N50 data sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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