IXYS IXFE36N100, IXFE34N100 Datasheet

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

Power MOSFET

IXFE 36N100 1000 V 33 A 0.24
IXFE 34N100 1000 V 30 A 0.28

t

Single MOSFET Die

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

Weight 19 g

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C, RGS = 1MΩ 1000 V

Continuous ±20 V
Transient ±30 V

TC = 25°C 36N100 33 A

34N100 30 A

TC = 25°C; Note 1 36N100 144 A

34N100 136 A

TC = 25°C 36 A

TC= 25°C 64 mJ
TC= 25°C 4 J

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

TC = 25°C 580 W

1.6 mm (0.063 in) from case for 10 s 300 °C

50/60 Hz, RMS t = 1 min 2500 V~

≤ 1 mA t = 1 s 3000 V~

I

ISOL

Mounting torque 1.5/13 Nm/lb.in.

d

Terminal connection torque 1.5/13 Nm/lb.in.

VGS= 0 V, ID = 3mA 1000 V

VDS= VGS, ID = 8mA 3.0 5.0 V

VGS= ±20V, VGS = 0V ±200 nA

VDS= V

DSS

= 0 V TJ = 125°C 2 mA

V

GS

VGS= 10V, ID = I
Note 2 34N100 0.28 Ω

T

DSS

-55 ... +150 °C
150 °C

-55 ... +150 °C

TJ = 25°C 100 µA

36N100 0.24 Ω

5 V/ns

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

≤ ≤

≤ 250 ns

≤ ≤

rr

ISOPLUS 227

G = Gate D = Drain
S = Source

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

TM

G

(IXFE)

S

S

D

•Conforms to SOT-227B outline

•Low R

HDMOSTM process

DS (on)

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Low cost

• Easy to mount

• Space savings

• High power density

© 2002 IXYS All rights reserved

98897 (1/02)

IXFE 36N100
IXFE 34N100

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

g

C

C

C

t

t

t

t

Q

Q

Q

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = IT, Note 2 18 28 S

15000 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 1400 pF

340 pF

81 ns

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

82 ns

RG= 1 Ω (External), 150 n s

40 ns

455 nC

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

120 nC

185 nC

0.22 K/W

0.07 K/W

ISOPLUS-227 B

Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.

I

S

VGS= 0 36N100 36 A

34N100 34 A

I

SM

V

SD

Repetitive; 36N100 144 A
pulse width limited by T

JM

34N100 136 A

IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

Q

RM

I

RM

Notes: 1. Pulse width limited by T

IF = IS, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C 180 n s

T

= 25°C 30 ns

J

TJ = 25°C 2 µC

8 A

JM.

2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.

3. I

Test current:

T

IXFE36N100: I
IXFE34N100: IT = 17 A

= 18 A

T

Please see IXFN36N100 data
sheet for characteristic curves.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025