IXYS IXFE180N10 Datasheet

HiPerFET

TM

IXFE 180N10 V

DSS

= 100 V

Power MOSFET

Single Die MOSFET

Preliminary data sheet

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

L(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

Weight 19 g

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 10 0 V
TJ= 25°C to 150°C, RGS = 1MΩ 100 V

Continuous ±20 V
Transient ±30 V

TC = 25°C 176 A

Terminal (current limit) 10 0 A

T

= 25°C; Note 1 720 A

C

TC = 25°C 180 A

TC= 25°C 60 mJ
TC= 25°C 3 J

≤ 150°C, RG = 2 Ω

T

J

TC = 25°C 500 W

1.6 mm (0.063 in) from case for 10 s 30 0 °C
50/60 Hz, RMS t = 1 min 2500 V~

≤ 1 mA t = 1 s 3000 V~

I

ISOL

Mounting torque 1.5/13Nm/lb.in.

d

Terminal connection torque 1.5/13Nm/lb.in.

VGS= 0 V, ID = 3mA 100 V
V

= VGS, ID = 8mA 2 4 V

DS

VGS= ±20V, VGS = 0V ±100 nA
VDS= V

DSS

= 0 V TJ = 125°C2mA

V

GS

VGS= 10V, ID = I
Note 2

T

DSS

-55 ... +150 °C
150 °C

-55 ... +150 °C

TJ = 25°C 100 µA

5 V/ns

8mΩ

I

D25

R

DS(on)

≤ ≤

trr

≤ 250 ns

≤ ≤

ISOPLUS 227

G = Gate D = Drain
S = Source

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

= 176 A
= 8 m

TM

(IXFE)

G

ΩΩ

Ω

ΩΩ

S

D

S

•Conforms to SOT-227B outline

•Encapsulating epoxy meets

UL

94 V-0, flammability classification

•Low R

HDMOSTM process

DS (on)

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

•DC-DC converters

•Synchronous rectification

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

•Low voltage relays

Advantages

•Easy to mount

•Space savings

•High power density

© 2002 IXYS All rights reserved

98902 (2/02)

IXFE 180N10

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified) Min. Typ. Max.

J

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 60A, Note 2 60 90 S

9100 pF

VGS= 0 V, VDS = 25 V , f = 1 M Hz 3200 pF

1600 pF

50 ns

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

90 ns

RG= 1 Ω (External), 14 0 ns

65 ns

360 n C

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = I

T

65 n C

190 n C

0.25 K/W

Note: IT = 90 A 0.07 K/W

ISOPLUS-227 B

Source-Drain Diode

(T

= 25°C, unless otherwise specified) Characteristic Values

J

Symbol Test Conditions Min. Typ. Max.
I

S

I

SM

VGS= 0 180 A
Repetitive; 720 A

Note1

V

SD

t

rr

Q

RM

I

RM

Notes: 1. Pulse width limited by T

IF = 100 A, VGS = 0 V, 1.5 V
Note2

250 n s

IF = 50 A, -di/dt = 100 A/µs, VR = 50 V 1.1 µC

13 A

JM.

2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
= 90A

3. I

T

Please see IXFN180N10 data
sheet for characteristic curves.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025