IXYS IXFC80N085, IXFC80N08 Datasheet

ADVANCE TECHNICAL INFORMATION

HiPerFETTM MOSFET

ISOPLUS220

Electrically Isolated Back Surface

TM

IXFC 80N08
IXFC 80N085

V
80 V 80 A 9 m

85 V 80 A 9 m

N-Channel Enhancement Mode
High dv/dt, Low t

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

L(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

F

C

V

ISOL

Weight 2g

T
T

Continuous ±20 V
Transient ±30 V

T
Lead current limit 80 A
T

T

T

T

T

1.6 mm (0.062 in.) from case for 10 s 300 °C

Mounting force 11..65/2.4..11 Nm/lb

50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~

, HDMOSTM Family

rr

ISOPLUS 220

= 25°C to 150°C 80N08 80 V

J

= 25°C to 150°C; RGS = 1 MΩ 80N085 85 V

J

= 25°C80A

C

= 25°C, pulse width limited by T

C

= 25°C 320 A

C

= 25°C30mJ

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

≤ 150°C, RG = 2 Ω

J

= 25°C 230 W

C

JM

, 5 V/ns

DSS

75 A

1.0 J

Features

l

-55 ... +150 °C
150 °C

-55 ... +150 °C

l

l

l

l

l

Applications

DSS

G = Gate, D = Drain,
S = Source

* Patent pending

I

D25

TM

G

D

S

R

DS(on)

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

Isolated back surface*

Silicon chip on Direct-Copper-Bond
substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R

DS (on)

Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)

rated
Fast intrinsic Rectifier

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2001 IXYS All rights reserved

VGS= 0 V, I

D

VDS= VGS, ID = 4 mA 2.0 4.0 V

V

= ±20 V

GS

VDS= V
VGS= 0 V T

DSS

VGS= 10 V, ID = I
Notes 1, 2

J

= 250 µA 80N08 80 V

80N085 85

, V

= 0 ±100 nA

DC

DS

T

= 25°C50µA

J

= 125°C1mA

J

T

min. typ. max.

9mΩ

l

DC-DC converters

l

Battery chargers

l

Switched-mode and resonant-mode
power supplies

l

DC choppers

l

AC motor control

Advantages

l

Easy assembly: no screws or isolation
foils required

l

Space savings

l

High power density

l

Low collector capacitance to ground
(low EMI)

98851 (8/01)

IXFC 80N08
IXFC 80N085

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 10 V; ID = IT Notes 1, 2 35 55 S

VGS= 0 V, VDS = 25 V, f = 1 MHz 1675 pF

VGS= 10 V, VDS = 0.5 V

ID = 0.5 I

, R

= 2.5 Ω (External) 95 ns

D25

G

VGS= 10 V, VDS = 0.5 V

,75ns

DSS

, ID = I

DSS

Notes 2 75 nC

min. typ. max.

4800 pF

T

0.25 K/W

590 pF

50 ns

31 ns

180 nC

42 nC

0.54 K/W

Source-Drain Diode Characteristic Values

(T

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

I

SM

V

SD

VGS= 0 V 80 A

Repetitive; pulse width limited by T

IF = IS, VGS = 0 V, 1.5 V
Note 1

J

JM

320 A

ISOPLUS220 OUTLINE

Note: All terminals are solder plated.

1 - Gate
2 - Drain
3 - Source

t

rr

200 ns

IF = 25A

Q

RM

-di/dt = 100 A/µs,

0.5 µC

VR = 50 V

I

RM

6A

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

2. IT = 40A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025