IXYS IXFC52N30P Service Manual
查询IXFC52N30P供应商
Advance Technical Information
PolarHT
TM
HiPerFET
IXFC52N30P V
I
Power MOSFET
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGS = 1 MΩ 300 V
Continuous ±20 V
Transient ±30 V
TC= 25°C32A
TC= 25°C, pulse width limited by T
JM
150 A
TC= 25°C52A
TC= 25°C30mJ
TC= 25°C 1.0 J
DSS
D25
R
DS(on)
ISOPLUS220
= 300 V
= 32 A
= 75 m
TM
(IXFC)
E153432
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
ΩΩ
Ω
ΩΩ
dv/dt I
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
TC= 25°C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 ° C
50/60 Hz, RMS, t = 1minute, leads-to-tab 2500 V~
Mounting Force 11..65/2.5..15 N/lb
Weight ISOPLUS220 2.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 300 V
VDS= VGS, ID = 4 mA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125°C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
65 75 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Advantages
z
Easy to mount
z
Space savings
z
High power density
© 2003 IXYS All rights reserved
DS99115A(04/05)
IXFC 52N30P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
VGS = 0 V, VDS = 25 V, f = 1 MHz 550 pF
VGS= 10 V, VDS = 0.5 V
RG= 4 Ω (External) 60 n s
VGS= 10 V, VDS = 0.5 V
, pulse test 20 30 S
D25
3490 pF
130 pF
24 ns
DSS
, ID = I
D25
22 ns
20 ns
110 nC
, ID = 0.5 I
DSS
D25
25 nC
53 nC
1.25 K/W
0.21 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISOPLUS220 Outline
I
S
I
SM
V
SD
VGS = 0 V 32 A
Repetitive 150 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
rr
IF = 25A
250
ns
-di/dt = 100 A/µs
Q
RM
V
= 100V
R
1.0
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
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