IXYS IXFC24N50, IXFC26N50 Datasheet
ADVANCE TECHNICAL INFORMATION
HiPerFETTM MOSFETs
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
T
Continuous ±20 V
Transient ±30 V
T
T
T
, HDMOSTM Family
rr
= 25°C to 150°C 500 V
J
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
= 25°C 26N50 23 A
C
= 25°C, Pulse width limited by T
C
= 25°C 26N50 26 A
C
JM
IXFC 26N50 500 V 23 A 0.20
IXFC 24N50 500 V 21 A 0.23
t
24N50 21 A
26N50 92 A
24N50 84 A
24N50 24 A
V
DSS
≤ ≤
≤ 250 ns
≤ ≤
rr
ISOPLUS 220
G
I
D25
TM
D
S
Isolated back surface*
G = Gate D = Drain
S = Source
* Patent pending
R
DS(on)
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 3 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
T
= 25°C30mJ
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 230 W
C
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~
(T
= 25°C, unless otherwise specified)
V
V
V
VDS = 0.8 V
V
= 0 V, ID = 250uA 500 V
GS
= VGS, ID = 4mA 2 4 V
DS
= ±20 V
GS
= 0 V T
GS
DC
DSS
, V
VGS = 10 V, ID = I
J
= 0 ±100 nA
DS
T
= 25°C 200 µA
J
= 125°C 1 mA
J
T
26N50 0.20 Ω
min. typ. max.
5 V/ns
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
l
Notes 1 & 2 24N50 0.23 Ω
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Easy assembly: no screws, or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
© 2000 IXYS All rights reserved
98755 (10/00)
IXFC 26N50
IXFC 24N50
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 15 V; ID = I
T
Note 1 11 21 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 450 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External), 65 ns
G
VGS = 10 V, VDS = 0.5 V
DSS
DSS
, ID = I
, ID = I
min. typ. max.
T
T
4200 pF
135 pF
16 ns
33 ns
30 ns
135 nC
28 nC
62 nC
0.54 K/W
0.30 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
VGS= 0 V 26 A
Repetitive; pulse width limited by T
J
JM
104 A
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
V
SD
t
rr
Q
RM
I
RM
IF = IS, VGS = 0 V, Note 1 1.5 V
T
= 25°C 250 ns
J
T
= 125°C 400 ns
IF = I
, -di/dt = 100 A/µs,
s
VR = 100 V
J
T
= 25°C11µC
J
T
= 125°C2µC
J
T
= 25°C10 A
J
T
= 125°C15 A
J
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. I
test current: IXFC26N50 IT = 13A
T
3. See IXFH26N50 data sheet for characteristic curves.
IXFC24N50 I
= 12A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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