IXYS IXFC 15N80Q Service Manual

查询IXFC15N80Q供应商

HiPerFET

TM

IXFC 15N80Q V

ISOPLUS 220TM MOSFET

Q-Class

Electrically Isolated Back Surface

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

F

C

Weight 2g

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified) Min. Typ. Max.

J

V

DSS

V

GS(th)

I

GSS

I

DSS

R

DS(on)

TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MΩ 800 V

Continuous ±20 V
Transient ±30 V

TC= 25°C13A

TC= 25°C, pulse width limited by T

TC= 25°C15A

TC= 25°C30mJ

TC= 25°C 1.0 J

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

≤ 150°C, RG = 2 Ω

T

J

TC= 25°C 230 W

1.6 mm (0.062 in.) from case for 10 s 300 °C

50/60 Hz, RMS t = 1 min leads to tab 2500 V

mounting force with clip 11...65 / 2.5...15 N/lb

VGS= 0 V, ID = 3 mA 800 V

VDS= VGS, ID = 4 mA 2.0 4.5 V

VGS= ±20 VDC, VDS = 0 ±100 nA

VDS= V
V

VGS= 10 V, ID = 0.5 I

DSS

= 0 V TJ = 125°C1mA

GS

D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

g

JM

, 10 V/ns

DSS

60 A

-40 ... +150 ° C
150 ° C

-40 ... +150 ° C

TJ = 25°C25µA

0.65 Ω

ISOPLUS220

G = Gate D = Drain
S = Source

Features

z Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

z Low drain to tab capacitance(<35pF)
z Low R
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)

rated

z Fast intrinsic Rectifier

Applications

z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode

power supplies

z DC choppers
z AC motor control

Advantages

z Easy assembly: no screws or isolation

foils required

z Space savings
z High power density

See IXFH15N80Q data sheet for
characteristic curves

DSS

I

D25

R

DS(on)

≤ ≤

≤ 250 ns

t

≤ ≤

rr

TM

G

D

S

DS (on)

= 800 V
= 13 A
= 0.65

Isolated back surface*

ΩΩ

Ω

ΩΩ

© 2003 IXYS All rights reserved

DS98946B(07/03)

IXFC 15N80Q

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

g

C

C

C

t

t

t

t

Q

Q

Q

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 10 V; ID = 0.5 I

, pulse test 8 16 S

D25

VGS = 0 V, VDS = 25 V, f = 1 MHz 360 pF

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

RG = 1.5 Ω (External) 53 ns

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

(TO-247) 0.25 K/W

Min. Typ. Max.

4300 pF

60 pF

18 ns

27 ns

16 ns

90 nC

20 nC

30 nC

0.54 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISOPLUS220 Outline

I

S

I

SM

V

SD

VGS = 0 V 15 A

Repetitive; 60 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

Q

RM

I

RM

IF = IS-di/dt = 100 A/µs, VR = 100 V 0.85 µC

250 ns

8A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343