IXYS IXFB38N100Q2 Service Manual
www.DataSheet4U.com
查询IXFB38N100Q2供应商
HiPerFET
TM
IXFB38N100Q2
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
F
c
Weight 10 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
Continuous ± 30 V
Transient ± 40 V
TC= 25°C38A
TC= 25°C, pulse width limited by T
TC= 25°C38A
TC= 25°C60mJ
TC= 25°C 5.0 J
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 890 W
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting Force 30...120/7.5...27 N/lb
V
V
VGS = ± 30 V, VDS = 0 ± 200 nA
VDS = V
V
VGS = 10 V, ID = 0.5 • I
rr
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
(T
= 0 V, ID = 1mA 1000 V
GS
= VGS, ID =8 mA 2.5 5.5 V
DS
DSS
= 0 V TJ = 125°C 3 mA
GS
Note 1
D25
TJ = 25°C 50 μA
g
JM
DSS
152 A
20 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
= 25°C unless otherwise specified)
J
min. typ. max.
0.25 Ω
V
DSS
I
D25
R
t
rr
= 1000 V
= 38 A
DS(on)
= 0.25
≤ ≤
≤ 300 ns
≤ ≤
ΩΩ
Ω
ΩΩ
PLUS 264TM (IXFB)
G
D
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
Pulse generation
z
Laser drivers
Advantages
z
PLUS 264
TM
package for clip or spring
mounting
z
Space savings
z
High power density
© 2005 IXYS All rights reserved
DS98949E(09/05)
www.DataSheet4U.com
IXFB38N100Q2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
G(on)
GS
GD
thJC
thCK
J
VDS= 20 V; ID = 0.5 • I
Note 1 24 40 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 950 pF
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 1 Ω (External) 57 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
min. typ. max.
7200 pF
170 pF
25 ns
D25
28 ns
15 ns
250 nC
D25
60 nC
105 nC
0.14 K/W
0.13 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
PLUS 264TM Outline
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
I
S
I
SM
V
SD
t
rr
Q
RM
VGS= 0 V 38 A
Repetitive; 152 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25A
-di/dt = 100 A/μs
VR = 100 V
I
RM
Note: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
300 ns
1.4 μ C
9A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Loading...