IXYS IXEN60N120D1, IXEN60N120 Datasheet
Advanced Technical Information
NPT3 IGBT
in miniBLOC package
C
G
E
IXEN 60N120 IXEN 60N120D1
IXEN 60N120
IXEN 60N120D1
C
G
E
IGBT
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 120 0 V
±
20 V
TC = 25°C 100 A
TC = 90°C 65 A
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 100 A
RBSOA, Clamped inductive load; L = 100 µH V
V
= 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs
CE
CES
TC = 25°C 44 5 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
CE(sat)
GE(th)
VJ
IC = 60 A; VGE = 15 V; TVJ = 25°C 2.1 2.7 V
TVJ = 125°C 2.5 V
IC = 2 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.1 mA
TVJ = 125°C 0.1 mA
min. typ. max.
4.5 6.5 V
I
C25
V
CES
V
CE(sat) typ.
miniBLOC, SOT-227 B
E153432
C = Collector
G = Gate
E = Emitter *
* Either Emitter terminal can be used as Main or Kelvin Emitter
= 100 A
= 1200 V
= 2.1 V
E
G
C
E
Features
3
• NPT
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• miniBLOC package
- isolated copper base plate
- screw terminals
- kelvin emitter terminal for easy drive
- industry standard outline
Applications
• single switches
and with complementary free wheeling
diodes
• choppers
• phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 60 A
VGE = ±15 V; RG = 22 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 3.8 nF
V
= 600 V; VGE = 15 V; IC = 50 A 500 nC
CE
150 ns
60 ns
700 ns
50 ns
7.2 mJ
6.0 mJ
0.28 K/W
231
1 - 2© 2002 IXYS All rights reserved
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXEN 60N120
IXEN 60N120D1
Diode (D1 version only)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
IF = 55 A, VGE = 0 V 2.4 2.6 V
IF = 55 A, VGE = 0 V, TJ = 125°C 1.9 V
I
F
TC = 25°C 11 0 A
TC = 90°C 60 A
I
RM
t
rr
t
rr
R
thJC
IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V 40 A
VGE = 0 V, TJ = 125°C 200 ns
IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
0.6 K/W
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
D
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
mounting torque (M4) 1.5 Nm
-40...+150 °C
-40...+150 °C
teminal connection torque (M4) 1.5 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
thCH
with heatsink compound 0.1 K/W
Weight 30 g
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
2 - 2© 2002 IXYS All rights reserved
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