IXYS IXEN40N120D1 Datasheet

1 - 2© 2002 IXYS All rights reserved

215

Features

• NPT

3

IGBT

- low saturation voltage

- positive temperature coefficient for
easy paralleling

- fast switching

- short tail current for optimized
performance in resonant circuits

• optional HiPerFREDTM diode

- fast reverse recovery

- low operating forward voltage

- low leakage current

• TO-247 package

- industry standard outline

- epoxy meets UL 94V-0

Applications

• AC drives

• DC drives and choppers

• Uninteruptible power supplies (UPS)

• switched-mode and resonant-mode
power supplies

• inductive heating, cookers

IGBT

Symbol Conditions Maximum Ratings
V

CES

TVJ = 25°C to 150°C 120 0 V

V

GES

±

20 V

I

C25

TC = 25°C 60 A

I

C90

TC = 90°C 40 A

I

CM

VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 50 A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH V

CES

t

SC

V

CE

= 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C 10 µs

(SCSOA) non-repetitive
P

tot

TC = 25°C 30 0 W

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

CE(sat)

IC = 40 A; VGE = 15 V; TVJ = 25°C 2.4 3.0 V

TVJ = 125°C 2.8 V

V

GE(th)

IC = 1 mA; VGE = V

CE

4.5 6.5 V

I

CES

V

CE

= V

CES; VGE

= 0 V; TVJ = 25°C 0.4 mA

TVJ = 125°C 0.4 mA

I

GES

VCE = 0 V; VGE = ± 20 V 200 nA

t

d(on)

150 ns

t

r

60 ns

t

d(off)

700 ns

t

f

50 ns

E

on

4.8 mJ

E

off

4.0 mJ

C

ies

VCE = 25 V; VGE = 0 V; f = 1 MHz 2 nF

Q

Gon

V

CE

= 600 V; VGE = 15 V; IC = 25 A 250 nC

R

thJC

0.42 K/W

Inductive load, TVJ = 125°C
VCE = 600 V; IC = 40 A
VGE = ±15 V; RG = 39 Ω

I

C25

= 60 A

V

CES

= 1200 V

V

CE(sat) typ.

= 2.4 V

NPT3 IGBT

with optional diode

Advanced Technical Information

IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]

IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]

IXEH 40N120
IXEH 40N120D1

IXEH 40N120 IXEH 40N120D1

TO-247 AD

G

E

C

C (TAB)

2 - 2© 2002 IXYS All rights reserved

IXEH 40N120
IXEH 40N120D1

Diode [D1 version only]

Symbol Conditions Maximum Ratings
I

F25

TC = 25°C 60 A

I

F90

TC = 90°C 35 A

Symbol Conditions Characteristic Values

min. typ. max.

V

F

IF = 40 A; TVJ = 25°C 2.6 3.0 V

TVJ = 125°C 2.0 V

I

RM

IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 27 A

t

rr

VR = 600 V; VGE = 0 V 150 ns

R

thJC

(per diode) 1.0 K/W

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

1

2.2 2.54 .087 .102

A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b22.87 3.12 .113 .123
C .4 .8 .016 .031

D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

Component

Symbol Conditions Maximum Ratings
T

VJ

-55...+150 °C

T

stg

-55...+150 °C

M

d

mounting torque 0.8...1.2 Nm

Symbol Conditions Characteristic Values

min. typ. max.

R

thCH

with heatsink compound 0.25 K/W

Weight 6g